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Heating chamber and semiconductor processing apparatus

A heating cavity and heated technology, which is applied in semiconductor/solid-state device manufacturing, metal material coating process, ion implantation plating, etc., can solve the problem of increasing the temperature difference between the edge region and the center region of the base 11, reducing heating Uniformity and other issues to achieve the effect of improving process uniformity, reducing temperature difference, and improving heating uniformity

Inactive Publication Date: 2018-01-05
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

[0005] Since the connecting cylinder 15 is located in the central area of ​​the base 11, the heat in the central area of ​​the base 11 is transferred to the bottom chamber wall 2 via the connecting cylinder 15 and the fixing seat 16, so that the heat dissipation rate in the central area of ​​the base 11 is greater than that in the edge area , which in turn increases the temperature difference between the edge area and the center area of ​​the susceptor 11, thus reducing the heating uniformity

Method used

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  • Heating chamber and semiconductor processing apparatus
  • Heating chamber and semiconductor processing apparatus
  • Heating chamber and semiconductor processing apparatus

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Embodiment Construction

[0037] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. Apparently, the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] image 3 A cross-sectional view of a heating chamber provided for an embodiment of the present invention. Figure 4 for image 3 Zoom-in view of the middle I region. Please also refer to image 3 and Figure 4 , the heating chamber 20 includes a heating device and a thermal insulation 24 disposed therein. Wherein, the heating device includes a base 21, a connecting cylinder 22 and a fixed seat 23, wherein the base...

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Abstract

The present invention provides a heating chamber and a semiconductor processing apparatus. The heating chamber includes a heating device and a heat insulating member. The heating device includes a base, a connecting cylinder, and a fixing base. The base is configured to support a heated member. A heating element is arranged in the base; the connecting cylinder is respectively connected with the base and the fixing base, and is located in the central area of the base; and the fixing base is connected with the wall of the bottom chamber of the heating chamber. The heat insulating element is arranged between the fixing base and the wall of the bottom chamber to cut off the heat transfer between them. The present invention provides the heating chamber that can reduce the temperature differencebetween the edge region and the central region of the base so that the uniformity of heating can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a heating chamber and semiconductor processing equipment. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is a commonly used processing technology in the field of microelectronics, for example, it is used to process copper interconnect layers in integrated circuits. The production of copper interconnection layer mainly includes the steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. The degassing step is to remove water vapor and other volatile impurities on the substrate and other processed workpieces. When implementing the degassing step, it is necessary to put the processed workpiece such as the substrate into the heating chamber and heat it to a certain temperature of 230-350°C. [0003] figure 1 It is a cross-sectional view of an existing heating ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67C23C14/22
Inventor 邱国庆
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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