Memory method for nanocrystalline floating gate structure-based multi-value nonvolatile memory

A non-volatile, nanocrystalline technology, applied in the field of memory, can solve the problems of limiting the effect of high-efficiency programming of nanocrystalline memory and the way of reading, and achieve the effects of reducing costs, increasing storage windows, and improving programming efficiency

Active Publication Date: 2011-07-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

It can be seen that due to the separation and storage characteristics of nanocrystals, the traditional operation method can only inject electrons at the drain end

Method used

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  • Memory method for nanocrystalline floating gate structure-based multi-value nonvolatile memory
  • Memory method for nanocrystalline floating gate structure-based multi-value nonvolatile memory
  • Memory method for nanocrystalline floating gate structure-based multi-value nonvolatile memory

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Embodiment Construction

[0034] On the basis of the traditional structure, the embodiment of the present invention proposes a new operation method, which realizes multi-value storage and improves operation efficiency by utilizing the characteristics of separate storage of nanocrystals.

[0035]An embodiment of the present invention provides a storage method for a multi-valued non-volatile memory based on a nanocrystalline floating gate structure, which can realize four storage states "00", "01", "10", and "11", thereby Multi-value storage is realized under the area, so that the storage capacity is doubled.

[0036] The multi-valued non-volatile memory based on nanocrystal floating gate structure realizes multi-valued storage by using the separated storage characteristics of nanocrystals. The source and drain of the multi-valued non-volatile memory based on the nanocrystal floating gate structure are programmed separately, and the reading of different states is realized based on the separation and stor...

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Abstract

The invention relates to a memory method for a nanocrystalline floating gate structure-based multi-value nonvolatile memory, and belongs to the technical field of memories. In the memory method, hot electron injection is used as a programming mode, Fowler-Nordheim (FN) tunneling is used as an erasing mode, and four memory states of 00, 01, 10 and 11 are differentiated according to amplitude of read current, so that multi-value memory can be realized under the condition of the same area to double memory capacity. In the method, the new programming mode is adopted to simultaneously program at asource end and a drain end, and the multi-value memory is formed, so that the programming efficiency is greatly improved, a memory window is also increased, memory of more points is realized, and thememory capacity which is twice the conventional memory capacity is realized on a memory unit of the same size; in addition, a manufacturing process is not changed while the advantage is realized, andthe cost is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a storage method of a multi-valued non-volatile memory based on a nanocrystal floating gate structure. Background technique [0002] In recent years, the growth rate of memory in integrated circuits has exceeded that of logic circuits. The proportion of memory in chip area has increased from 20% in 1999 to 71% in 2005, while logic circuits have decreased from 66% in 1999 to 2005. 16%. Among memory products, the fastest growing market demand is non-volatile memory. As a typical device of non-volatile memory, flash memory (Flash Memory) has been widely used in various handheld mobile storage electronic products such as U disk, MP3 player and mobile phone. However, the flash memory device structure widely adopted by the industry is facing serious challenges in terms of storage time and power consumption while developing to nanometer feature size. [0003] The floating-gate non-vol...

Claims

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Application Information

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IPC IPC(8): G11C16/04G11C16/10
Inventor 王琴杨潇楠刘明王永
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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