Multiple-valued non-volatile memory and preparation method thereof

Abstract

The invention relates to a multiple-valued non-volatile memory and a preparation method thereof. The memory comprises a semiconductor substrate, wherein both ends of the semiconductor substrate include a source electrode and a drain electrode respectively along the direction of a memory bit line and both ends of the semiconductor substrate include a shallow tunnel isolation structure respectively along the direction of a memory sub-line. A tunneling dielectric layer, a charge storage layer, a charge blocking layer, and a gate electrode are sequentially arranged on the semiconductor substrate, wherein the charge storage layer is a combination of two different storage materials which are alternatively arranged along the direction of the memory sub-line. The multiple-valued non-volatile memory of the invention adopts the storage layer formed by alternatively arranging the two different materials, which increases the storage density, promises a large window while reducing the thickness of a gate dielectric layer greatly,. Therefore, multiple-valued storage and high-density storage are realized the cost is reduced in turn.

Description

technical field [0001] The invention relates to a structure and a preparation method of a non-volatile memory, in particular to a multi-valued non-volatile memory with high integration density and localized charge storage and a preparation method thereof, belonging to the technical field of microelectronics manufacturing and memory. Background technique [0002] The current microelectronics products are mainly divided into two categories: logic devices and storage devices, and storage devices are needed in almost all electronic products today, so storage devices occupy a very important position in the field of microelectronics. Storage devices can generally be classified into volatile memories and non-volatile memories. The main feature of non-volatile memory is the ability to retain stored information for a long period of time without power on. It not only has the characteristics of read-only memory (ROM), but also has high access speed, and is easy to erase and rewrite, ...

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Problems solved by technology

[0004] The present invention aims at the problem that the current non-volatile memory adopts high-k material as the storage layer and has shown good performance, but in order to achieve a certain storage window, it often needs a large physical thickness, which is not conducive to further improvement of integration density, and provides A kind of multi-valued non-volatile memory and its preparation method

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