Composite storage medium floating-gate memory structure and manufacture method thereof

Abstract

The invention discloses a composite storage medium floating-gate memory structure and a manufacture method thereof. The composite storage medium floating-gate memory structure sequentially comprises the following structures from bottom to top: a silicon substrate, a tunneling medium layer, silicon nitride, silicon nanocrystals, high-temperature oxides, a polysilicon layer, a grid and source / drain region and a side wall, wherein the grid and source / drain region is formed on the silicon substrate through etching, and the side wall is etched on the silicon dioxide layer. When being used, the invention solves the problem of reducibility of nodes in the traditional Flash technology, two storage media are adopted for storing electric charges, and a storage window is enlarged, so the reliability of the floating-gate electric charge storage is improved, and the holding feature of a floating-grate device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a composite storage medium floating gate memory structure and a manufacturing method thereof. Background technique [0002] Since D.Kahng and S.M.Sze of Bell Laboratories proposed the nonvolatile semiconductor memory with floating gate structure in 1967, the floating gate semiconductor memory based on the gate stacked MOSFET structure occupies an extremely high capacity, cost and power consumption. The big advantage replaced the magnetic memory that had been used for a long time before. [0003] On this basis, Japan's Toshiba Corporation successfully proposed the concept of Flash memory in 1984. At present, Flash memory is the mainstream device in the non-volatile semiconductor memory market. However, with the continuous advancement of microelectronic technology nodes, the process line width will Further reduction, the traditional Flash device based on the floating...

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Problems solved by technology

[0005] However, in the second scheme, both the silicon nanocrystal floating gate memory and the silicon nitride floating gate memory have the problem of insufficient charge storage capacity, and the composite structure of silicon nanocrystal and silicon nitride can increase the charge of the floating gate. storage capacity

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