Composite storage medium floating-gate memory structure and manufacture method thereof

A technology of a storage medium and a manufacturing method, applied in the field of a composite storage medium floating gate memory structure and its fabrication, can solve problems such as insufficient charge storage capacity, and achieve the effects of improving yield, increasing storage window, and improving retention characteristics

CN101814506AInactive Publication Date: 2010-08-25INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2010-08-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a composite storage medium floating-gate memory structure and a manufacture method thereof. The composite storage medium floating-gate memory structure sequentially comprises the following structures from bottom to top: a silicon substrate, a tunneling medium layer, silicon nitride, silicon nanocrystals, high-temperature oxides, a polysilicon layer, a grid and source / drain region and a side wall, wherein the grid and source / drain region is formed on the silicon substrate through etching, and the side wall is etched on the silicon dioxide layer. When being used, the invention solves the problem of reducibility of nodes in the traditional Flash technology, two storage media are adopted for storing electric charges, and a storage window is enlarged, so the reliability of the floating-gate electric charge storage is improved, and the holding feature of a floating-grate device is improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor devices, in particular to a composite storage medium floating gate memory structure and a manufacturing method thereof. Background technique

[0002] Since D.Kahng and S.M.Sze of Bell Laboratories proposed the nonvolatile semiconductor memory with floating gate structure in 1967, the floating gate semiconductor memory based on the gate stacked MOSFET structure occupies an extremely high capacity, cost and power consumption. The big advantage replaced the magnetic memory that had been used for a long time before.

[0003] On this basis, Japan's Toshiba Corporation successfully proposed the concept of Flash memory in 1984. At present, Flash memory is the mainstream device in the non-volatile semiconductor memory market. However, with the continuous advancement of microelectronic technology nodes, the process line width will Further reduction, the traditional Flash device based on the floating...

Examples

Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036] The invention adopts silicon nitride and silicon nano-crystal composite medium as the floating gate layer in the non-volatile memory, which can increase the ability of the floating gate layer to store charges, thereby improving the storage window.

[0037] As shown in Figure 1, Figure 1 is a schematic structural diagram of a composite storage medium floating gate memory structure provided by the present invention, which includes a silicon substrate, a tunnel dielectric layer, silicon nitride, silicon nanocrystals, a high temperature material, polysilicon layer, gate and source / drain regions formed by etching on the silicon substrate, and sidewalls formed by etching on the silicon dioxide layer.

[0038] The tunneli...