The invention specifically relates to a method for preparing
silicon nanocrystalline with optical
gain which can be improved by high-pressure
hydrogen passivation. According to the method provided bythe invention, in virtue of the
hydrogen passivation principle which is common in the field of
semiconductor electronic circuits,
hydrogen is used as a basic
raw material for material treatment, and the means of proper heating and high-pressure sealing are used, so that material
passivation is realized. The
silicon nanocrystalline is used as a whole
silicon luminescent material, and a large numberof defect centers can be produced in the preparation process of the silicon nanocrystalline. Part of defects in a
luminescent material can be effectively saturated and eliminated through the high-pressure
hydrogen passivation, and the non-
radiation recombination centers are reduced, so that the effects of remarkably increasing the
luminous intensity and the optical
gain of the
nanocrystalline silicon can be realized, and thus the
nano crystalline silicon material with improved optical
gain can be used for developing a novel silicon
laser. The invention provides the
hydrogen passivation methodwhich is different from conventional high-temperature
hydrogen passivation and
plasma hydrogen passivation, and according to the process, high temperature does not need to be maintained, the
plasma discharge process is not needed, the
luminescence enhancing effect on the material is remarkable, the cost is low, the operation is simple, and the process is safe and controllable.