Method for preparing silicon nanocrystalline with optical gain which can be improved by high-pressure hydrogen passivation

Abstract

The invention specifically relates to a method for preparing silicon nanocrystalline with optical gain which can be improved by high-pressure hydrogen passivation. According to the method provided bythe invention, in virtue of the hydrogen passivation principle which is common in the field of semiconductor electronic circuits, hydrogen is used as a basic raw material for material treatment, and the means of proper heating and high-pressure sealing are used, so that material passivation is realized. The silicon nanocrystalline is used as a whole silicon luminescent material, and a large numberof defect centers can be produced in the preparation process of the silicon nanocrystalline. Part of defects in a luminescent material can be effectively saturated and eliminated through the high-pressure hydrogen passivation, and the non-radiation recombination centers are reduced, so that the effects of remarkably increasing the luminous intensity and the optical gain of the nanocrystalline silicon can be realized, and thus the nano crystalline silicon material with improved optical gain can be used for developing a novel silicon laser. The invention provides the hydrogen passivation methodwhich is different from conventional high-temperature hydrogen passivation and plasma hydrogen passivation, and according to the process, high temperature does not need to be maintained, the plasma discharge process is not needed, the luminescence enhancing effect on the material is remarkable, the cost is low, the operation is simple, and the process is safe and controllable.

Description

technical field [0001] The invention belongs to the field of new materials, and in particular relates to a method for preparing silicon nanocrystals with high-pressure hydrogen passivation to improve light gain. Background technique [0002] In the early 1990s, Canham, UK, discovered that porous silicon has photoluminescent properties. Since then, the study of nanoscale silicon materials has set off a whole research upsurge. Due to its own indirect bandgap energy band characteristics, the probability of spontaneous emission at room temperature to produce light is very low. It is generally believed that the photoluminescence phenomenon of silicon nanocrystals is caused by the quantum confinement effect. Silicon nanocrystals wrapped in a medium are favored by everyone because of their firm structure and stable luminescence, and they also have the property of changing their luminescence peak position by adjusting their size. There are many ways to prepare silicon nanocrystal...

AI Technical Summary

Problems solved by technology

However, there are some defects in these methods: the high temperature annealing method has certain obstacles to the formation of silicon-hydrogen bonds, so its effect on improving luminescence is limited; the high-energy hydrogen ion implantation method will destroy the structure of the light-emitting layer, introduce structural defects, and increase quenching centers; The bulk discharge method requires the activation of hydrogen by discharge

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