Erbium silicate crystal and silicon nanocrystalline co-inlaid silicon dioxide film and preparation method and application thereof
A silicon nanocrystal and silicon dioxide technology, which is applied in the field of co-embedded silicon dioxide film of erbium silicate crystal and silicon nanocrystal and its preparation, can solve the problem that erbium silicate crystal and silicon nanocrystal cannot be obtained at the same time, and achieves the Avoid the effects of uneven film distribution, avoid concentration quenching, and low turn-on voltage
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[0038]The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. The operating methods not indicated in the following examples are generally in accordance with conventional conditions, or in accordance with the conditions suggested by the manufacturer.
[0039] In this embodiment, the electroluminescent device based on the thin film preparation of erbium silicate grains and silicon nanocrystals co-embedded silicon dioxide adopts radio frequency magnetron sputtering to (100) single-sided polishing resistivity ρ= 0.1~1Ω.cm P-type Czochralski single crystal silicon wafer sputtering film, the substrate heating temperature is 300°C when sputtering the film, and the vacuum degree of the background of the radio frequency sputtering equipment is 2×10 - 3 Pa, t...
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