Silicon nanocrystal/graphene wide-spectrum photodetector and preparation method thereof
A photodetector, silicon nanocrystal technology, applied in the field of photodetection, can solve the problems of affecting carrier transmission and response time as long as seconds, and achieve the effects of high responsivity, low production cost and fast response speed
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[0038] The present invention also provides a method for preparing a silicon nanocrystal / graphene wide-spectrum photodetector, comprising the following steps:
[0039] Step 1, n-type Si substrate 4 cleaning;
[0040] Step 2, preparation of silicon nanocrystalline layer 3, spin-coating HSQ photoresist at a speed of 3000 rpm, with a thickness of 0.5-0.8 μm, and annealing in a nitrogen atmosphere in a quartz annealing furnace;
[0041] Step 3. Carry out the first step of photolithography, photoetch the silicon nanocrystal mesa pattern, and use ICP etching to obtain the silicon nanocrystal mesa;
[0042] Step 4, making the back electrode layer 5, using electron beam to evaporate Ti / Au / Ti;
[0043] Step 5, making the graphene layer 2, vapor-depositing a 30-50nm Au layer on the graphene layer, and configuring a copper foil etching solution;
[0044] Step 6, transfer of the graphene layer 2, use the Si substrate sheet to transfer the graphene coated with the Au layer to clear water ...
Embodiment
[0055] Such as figure 1 As shown, a silicon nanocrystal / graphene wide-spectrum photodetector, an n-type Si substrate 4 is followed by a silicon nanocrystal layer 3, a graphene layer 2, and a front electrode 1, and the back electrode 5 is located on the n-type Si substrate. 4 below.
[0056] n-type Si substrate 4 has a resistivity of 1-10Ω / cm and a thickness of 500 μm;
[0057] The silicon nanocrystalline layer 3 is obtained by spin-coating hydrogen silsesquioxane HSQ and annealing at a high temperature, the annealing temperature is 900-1100°C, and the thickness is 0.5-0.8 μm;
[0058]The graphene layer 2 has a single-layer structure, grown on the copper foil by CVD, and a 30nm thick gold layer is evaporated on the graphene surface, and the graphene and the gold layer are simultaneously transferred from the copper foil to the silicon nanocrystalline layer 3;
[0059] The front electrode 1 is a Ti / Au electrode, and the shape is a square electrode, such as figure 2 Shown, con...
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