Nano tunnel and silver nanoparticle coexisting organic field effect transistor memory and preparation method thereof

Abstract

The invention discloses a nano tunnel and silver nanoparticle coexisting organic field effect transistor memory and a preparation method thereof. The memory structurally comprises a source and drain electrode, an organic semiconductor layer, a charge storage layer, a gate insulating layer, a substrate and a gate electrode formed on the substrate from top to bottom in sequence, wherein the charge storage layer comprises two layers, the first layer is a polymer layer with a nano tunnel structure, and the second layer is a silver nanoparticle layer uniformly distributed on the polymer layer. The charge storage layer is prepared by adopting a secondary spin-coating solution processing method, the preparation process is simple, and large-area preparation can be realized. The film morphology of the nanopore can be regulated and controlled by simply adjusting the spin-coating rotating speed through primary spin-coating, and then the silver nanoparticles are uniformly distributed on the nanopore morphology through secondary spin-coating. The storage capacity, the high mobility and the switch ratio are achieved, the stability is greatly improved, the price is low, the cost is saved, and popularization and integrated commercial application are facilitated.

Description

Technical field [0001] The present invention belongs to the field of semiconductor memory technology, specifically relates to a nano-tunnel and silver nanoparticle coexistence of airport effect transistor memory and preparation method thereof. Background [0002] In the era of big data and artificial intelligence, a large number of information storage and high-speed transmission urgently need to be solved. Airport Effect Transistor (OFET) memory devices have become a hot topic of research due to their advantages of non-destructive reading, easy integration, and compatibility with existing CMOS. OfET storage devices, storage windows, read and write erasure cycles, current switching ratios and maintenance time are key parameters to distinguish the memory level and determine the reliability memory of the system. Charge-trapping materials are typically injected and released by electric field forces, and to date, with the rapid development of research, numerous studies have shown tha...

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Problems solved by technology

However, the existing charge storage layer still has problems such as complex surface morphology control, low storage density, and insensitive photoelectric control.

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