Blue-jewel-crystal multi-crucible melt growth technolgoy

A sapphire crystal, melt growth technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of high crystal cost, low utilization rate and high energy consumption

Active Publication Date: 2007-08-29
苏州晶生新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, from the perspective of industrialization, there are still problems such as low utilization rate and high energy consumption, which make the crystal cost remain high, which is not conducive to large-scale promotion
So far, sapphire ...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The 99.999% high-purity alumina raw material is dried and sintered at 1.5t / cm 2 It was forged and pressed into blocks under isostatic pressing, and then loaded into cylindrical molybdenum crucibles with orientation seeds. In the same way, prepare 5 crucibles at the same time, and place them in a 5-station high-temperature drop furnace at the same time. After the whole system is sealed, turn on the power to raise the temperature and start the mechanical pump and the diffusion pump successively to evacuate to 10 -3 Pa, when the furnace temperature reaches 1500°C, fill it with high-purity argon, continue to heat up to 2150°C, keep it warm for 5 hours, adjust the position of the crucible, melt the top of the raw material and the seed crystal, and adjust the temperature gradient of the solid-liquid interface to about 25°C / cm , and then start the descending device to start crystal growth, and the descending rate of the crucible is 1.5 mm / h. After the crystal growth is complet...

Embodiment 12

[0035] The 99.999% high-purity alumina raw material is dried and sintered at 4t / cm 2 Forged into blocks under isostatic pressing. Prepare 3 rectangular cylindrical molybdenum crucibles, set the orientation to , The seed crystals are loaded into the bottom of the crucible in turn, and then the material blocks are loaded into the crucible and adjusted to an appropriate position in the furnace. After the whole system is sealed, turn on the power to raise the temperature, and start the mechanical pump and the diffusion pump to evacuate to 10 -3 Pa, after the furnace temperature reaches 1700°C, fill it with high-purity argon, continue to heat up to 2100°C, keep it warm for 7 hours, melt the raw material and the top of the seed crystal, adjust the position of the crucible to inoculate, and keep the temperature gradient of the solid-liquid interface at about 20°C / cm , start the descending device, start crystal growth, and the crucible descends at a rate of 1.2mm / h. After the cr...

Embodiment 3

[0037] Select the tungsten crucible material, process two rectangular columnar and two cylindrical crucibles, forge and press the pretreated 99.999% high-purity alumina raw material into blocks, and put them into blocks that have been placed at the bottom in advance. Orient the seed crystal in the crucible. After the furnace is installed, seal the system, turn on the power to raise the temperature, and start the mechanical pump and the diffusion pump to evacuate to 10 -4 Pa, when the furnace temperature reaches 1600°C, fill it with high-purity argon, continue to heat up to 2200°C, keep it warm for 4 hours, adjust the position of the crucible, melt the top of the raw material and the seed crystal, and keep the temperature gradient of the solid-liquid interface at about 30°C / cm After the temperature field stabilizes, start the descending device to start crystal growth, and the crucible descends at a rate of 2.0mm / h. After the crystal growth is completed, in-situ annealing is p...

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PUM

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Abstract

The invention provides a multi-pot melt growth technique for growing sapphire crystals, comprising: (1) pretreating aluminum oxide raw material; (2) placing the pretreated aluminum oxide blocks and the oriented seed crystals into pots and moving into high temperature descending furnace, sealing the whole system and power-on to raise temperature, starting mechanical pump and diffusion pump in turn, vacuumizing to 10-3-10-4Pa, and when the furnace temperature up to 1500-1800deg.C, charging inert gas and continuing raising temperature to the set temperature (2100-2250deg.C); (3) when the furnace temperature up to the set temperature, preserving heat for 4-8 hours, regulating hearth temperature and pot positions to smelt raw material and seed crystal top to implement inoculation growth and setting solid-liquid interface temperature gradient at 10-50deg.C/cm and controlling pot descending rate at 0.1-3.0mm/h; and (4) after the crystal growth ends, making in-situ annealing treatment. And the process has features of raw material pretreatment, special temperature field design, multi-pot technique, in-situ annealing treatment, etc, and advantages of stable temperature field, adjustable temperature gradient, operating convenience, low average energy consumption, high yielding by one furnace, and beneficial to industrialized production.

Description

technical field [0001] The invention relates to a multi-crucible technology for growing sapphire crystals from high-temperature melts, that is, the multi-crucible melt technology is used to grow large-sized, high-quality sapphire crystals, and belongs to the field of single crystal growth. Background technique [0002] Sapphire (α-Al 2 o 3 ), commonly known as corundum, belongs to the hexagonal crystal system, with a melting point of 2050°C. Sapphire crystal has a series of unique and excellent physical and chemical properties: its hardness is high, Mohs hardness reaches 9, it is an important wear-resistant material; its transmittance is high, from vacuum ultraviolet, visible, near-infrared to mid-infrared 5.5μm has a high transmittance and is an important window material; sapphire doped with Ti ions and other ions has good luminescence characteristics and is an excellent laser host material; it is very suitable for growing epitaxy such as GaN on a sapphire substrate laye...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B11/00
Inventor 吴宪君徐家跃顾宝林
Owner 苏州晶生新材料有限公司
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