The invention provides a multi-pot melt growth technique for growing 
sapphire crystals, comprising: (1) pretreating aluminum 
oxide raw material; (2) placing the pretreated aluminum 
oxide blocks and the oriented seed crystals into pots and moving into high temperature descending furnace, sealing the whole 
system and power-on to raise temperature, starting mechanical pump and 
diffusion pump in turn, vacuumizing to 10-3-10-4Pa, and when the 
furnace temperature up to 1500-1800deg.C, charging 
inert gas and continuing raising temperature to the set temperature (2100-2250deg.C); (3) when the 
furnace temperature up to the set temperature, preserving heat for 4-8 hours, regulating 
hearth temperature and pot positions to smelt 
raw material and 
seed crystal top to implement 
inoculation growth and setting 
solid-
liquid interface temperature gradient at 10-50deg.C / cm and controlling pot descending rate at 0.1-3.0mm / h; and (4) after the 
crystal growth ends, making in-situ annealing treatment. And the process has features of 
raw material pretreatment, special temperature field design, multi-pot technique, in-situ annealing treatment, etc, and advantages of stable temperature field, adjustable 
temperature gradient, operating convenience, low average 
energy consumption, 
high yielding by one furnace, and beneficial to industrialized production.