The invention provides a multi-pot melt growth technique for growing sapphire crystals, comprising: (1) pretreating aluminum oxide raw material; (2) placing the pretreated aluminum oxide blocks and the oriented seed crystals into pots and moving into high temperature descending furnace, sealing the whole system and power-on to raise temperature, starting mechanical pump and diffusion pump in turn, vacuumizing to 10-3-10-4Pa, and when the furnace temperature up to 1500-1800deg.C, charging inert gas and continuing raising temperature to the set temperature (2100-2250deg.C); (3) when the furnace temperature up to the set temperature, preserving heat for 4-8 hours, regulating hearth temperature and pot positions to smelt raw material and seed crystal top to implement inoculation growth and setting solid-liquid interface temperature gradient at 10-50deg.C/cm and controlling pot descending rate at 0.1-3.0mm/h; and (4) after the crystal growth ends, making in-situ annealing treatment. And the process has features of raw material pretreatment, special temperature field design, multi-pot technique, in-situ annealing treatment, etc, and advantages of stable temperature field, adjustable temperature gradient, operating convenience, low average energy consumption, high yielding by one furnace, and beneficial to industrialized production.