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A resistive memory based on organic/inorganic hybrid perovskite material and its preparation method

A technology of resistive memory and perovskite materials, applied in electrical components and other directions, to achieve the effects of good multi-value storage capability, high transition speed, and low-cost preparation

Active Publication Date: 2018-08-28
GRIMAT ENG INST CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, resistive memory based on such organic / inorganic hybrid perovskite structure materials has not been reported yet.

Method used

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  • A resistive memory based on organic/inorganic hybrid perovskite material and its preparation method
  • A resistive memory based on organic/inorganic hybrid perovskite material and its preparation method
  • A resistive memory based on organic/inorganic hybrid perovskite material and its preparation method

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Embodiment 1

[0042] This embodiment has Ag / CH 3 NH 3 PB 3 / Pt structure resistive memory, in which Pt is used as the bottom electrode, CH 3 NH 3 PB 3 As the storage function layer, Ag is used as the top electrode. The specific manufacturing process is as follows: (1) The Pt bottom electrode is formed by magnetron sputtering, and the specific preparation conditions are as follows: background vacuum 2×10 -4 Pa, the working pressure is 1pa, the sputtering power is 60W, the working gas is Ar gas, the deposition time is 5min, and the thickness of the formed Pt bottom electrode film is 100nm; (2) CH 3 NH 3 PB 3 storage functional layer, the specific preparation conditions are as follows: 0.395g of CH 3 NH 3 I and 1.157 g of PbI 3 The spin-coating precursor solution was prepared by dissolving 2 mL of butyrolactone, and the prepared spin-coating precursor solution was ultrasonically stirred at 70 °C for 12 hours. The spin-coating precursor solution was spin-coated on the prepared substr...

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Abstract

The invention discloses a resistive random access memory based on an organic / inorganic hybrid perovskite material and a fabrication method of the resistive random access memory. The resistive random access memory comprises a bottom electrode, a top electrode and a resistance changing functional layer material, wherein the resistance changing functional layer material is arranged between the bottom electrode and the top electrode and comprises one layer or multiple layers of organic / inorganic hybrid perovskite thin film materials. The fabrication method comprises the following steps of (1) cleaning a substrate; (2) depositing the bottom electrode on the substrate by employing a physical vapor deposition technique; (3) forming the organic / inorganic hybrid perovskite thin film material on the bottom electrode as a resistance changing functional layer by techniques such as spin coating, dip coating and vacuum evaporation; and (4) depositing the top electrode on the resistance changing functional layer by employing the physical vapor deposition technique. According to the resistive random access memory, the structure is simple, and low-temperature and low-cost fabrication can be carried out; and the fabricated device has the technical advantages of large memory window, low conversion voltage, high conversion speed, multi-value storage capability, favorable thermal stability and device durability and the like.

Description

technical field [0001] The invention relates to a resistive memory based on an organic / inorganic hybrid perovskite material and a preparation method thereof, belonging to the technical field of semiconductor nonvolatile memory. Background technique [0002] With the advent of the information age, human life has been closely related to computer technology. The rapid growth of information promotes the continuous development of information science and technology towards higher goals. As the core technology of the semiconductor industry, the development of memory has always attracted much attention and is a hot spot in the field of electronic device research. Every breakthrough in the development of memory technology will bring leap-forward development to the semiconductor industry. Memory has been developing towards higher storage density, faster operating speed, lower cost, and lower power consumption. [0003] With the continuous development of technology, traditional memor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 赵鸿滨屠海令
Owner GRIMAT ENG INST CO LTD
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