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Programing method for ferroelectric dynamic random access single-tube unit array

A dynamic random and cell array technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of narrowing the storage window of ferroelectric transistors, memory misoperation, etc.

Inactive Publication Date: 2006-10-18
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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Problems solved by technology

However, most of the currently prepared ferroelectric materials can only meet the saturation polarization voltage five times or more than the coercive voltage, which makes the programming voltage much smaller than the voltage for the ferroelectric material to reach the saturation polarization, reducing the The storage window of the ferroelectric transistor, even if the array can perform normal programming operations, due to the small storage window, it will easily lead to misoperation of the memory during operation

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  • Programing method for ferroelectric dynamic random access single-tube unit array
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  • Programing method for ferroelectric dynamic random access single-tube unit array

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Embodiment Construction

[0025] In the process of programming the selected cells, the present invention applies a programming prohibition voltage to the word line, bit line and source line of the unselected cells, so that the range of the programming voltage that can be added to realize the single-transistor cell array structure is further increased. Thus, a larger storage window is obtained, which is also easier to realize for the ferroelectric material itself.

[0026] To realize the programming working mode of the single-tube cell array structure of the ferroelectric DRAM, its operation is as follows:

[0027] 1) Write '1'

[0028] Assuming that Cell1 is the selected cell, add a pulse voltage of 1 / 2Vpp to the word line 1A, a pulse voltage of -1 / 2Vpp to the bit line 1B and source line 1C, and connect the pulse voltage of -1 / 6Vpp to the non-selected word lines , unselected bit lines and source lines are connected to a pulse voltage of 1 / 6Vpp, such as image 3 (a) shown. In this way, it can ensure ...

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Abstract

The present invention provides a programming method of ferro-electric dynamic random memory single-tube unit array, belonging to the field of semiconductor integrated circuit design and manufacture technology. In the course of programming true unit said method can apply the voltage for inhibiting programming to word line, bit line and source line of non-true unit so as to make the range of programming voltage which can be applied to said single-tube unit array be further increased, so that the larger storage window can be obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit design and manufacture, and relates to ferroelectric material preparation and novel semiconductor memory manufacturing technology and method, in particular to a programming method for ferroelectric dynamic random access memory single-transistor unit array. Background technique [0002] Ferroelectric Field Effect Transistor (FE-FET) has the advantages of high speed, low power consumption, high integration, non-volatility, etc., so it has received a lot of attention since it was proposed. Promising technology. However, after research, due to the existence of the anti-polarization field of the ferroelectric material itself and the gate leakage charge, its retention time cannot meet the requirements of the non-volatile memory. In order to overcome this problem, T.P.Ma of Yale University and others proposed to implement DRAM with ferroelectric field effect transistors, and use...

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Application Information

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IPC IPC(8): G11C11/409G11C11/22
Inventor 康晋锋李惟芬刘晓彦杜刚韩汝琦王新安
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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