Bulk heterojunction organic field effect transistor memory and preparation method thereof

A technology of bulk heterojunction and organic field, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of unstable operation and complex preparation process of heterojunction field-effect transistor memory, and achieve the goal of manufacturing The method is simple and easy, the effect of improving mobility and threshold voltage, and high repetition rate

Pending Publication Date: 2021-12-10
LUDONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the technical problem that the existing heterojunction field effect transistor memory has complicated preparation process and cannot operate stably

Method used

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  • Bulk heterojunction organic field effect transistor memory and preparation method thereof
  • Bulk heterojunction organic field effect transistor memory and preparation method thereof
  • Bulk heterojunction organic field effect transistor memory and preparation method thereof

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preparation example Construction

[0042] The present invention also provides a method for preparing the organic field-effect transistor memory with bipolar memory performance produced by the organic heterojunction semiconductor layer, which specifically includes the following steps:

[0043] (1) Configure the charge transport layer solution: dissolve the polymer tetramethylpiperidinol TMP in the organic solvent toluene to form a polymer solution, heat in a water bath for 2h to completely dissolve the polymer tetramethylpiperidinol TMP, and the TMP in the solution The concentration is 3mg / ml;

[0044] (2) Prepare the substrate: select n-type heavily doped silicon as the substrate, including the lower gate electrode and the upper thermally grown 50nm silicon dioxide as the gate insulating layer, and cut the substrate into 1.5×1.5cm 2 According to the specifications, place it on a shelf at an angle of 45°, put it in a beaker, add acetone to immerse the silicon wafer substrate, ultrasonicate for 15 minutes, and po...

Embodiment 1

[0053] (1) Prepare tetramethylpiperidinol TMP solution with a concentration of 3 mg / ml, which needs to be prepared at least 2 hours in advance to ensure that tetramethylpiperidinol is fully dissolved, and the solvent is toluene without additional treatment;

[0054] (2) Prepare the substrate: select n-type heavily doped silicon as the substrate, and its surface has SiO with a thermal growth thickness of 50nm 2 Insulation layer, cut the silicon wafer substrate into 1.5×1.5cm 2 placed on a shelf at an angle of 45°, put it in a beaker, add acetone to immerse the silicon wafer substrate, sonicate for 15 minutes, and pour off the acetone; then add ethanol and deionized water, and pour off the ethanol and deionized water after 15 minutes of supersonication , and then dry the surface with nitrogen, and place it in an oven at 120°C for 30 minutes to dry the substrate thoroughly, and then place the dried silicon wafer substrate in a UV cleaning machine for 10 minutes to further clean t...

Embodiment 2

[0061] (1) Prepare tetramethylpiperidinol TMP solution with a concentration of 3 mg / ml, which needs to be prepared at least 2 hours in advance to ensure that tetramethylpiperidinol is fully dissolved, and the solvent is toluene without additional treatment;

[0062] (2) Prepare the substrate: select n-type heavily doped silicon as the substrate, and its surface has SiO with a thermal growth thickness of 50nm 2 Insulation layer, cut the silicon wafer substrate into 1.5×1.5cm 2 placed on a shelf at an angle of 45°, put it in a beaker, add acetone to immerse the silicon wafer substrate, sonicate for 15 minutes, and pour off the acetone; then add ethanol and deionized water, and pour off the ethanol and deionized water after 15 minutes of supersonication , and then dry the surface with nitrogen, and place it in an oven at 120°C for 30 minutes to dry the substrate thoroughly, and then place the dried silicon wafer substrate in a UV cleaning machine for 10 minutes to further clean t...

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Abstract

The invention discloses a bulk heterojunction organic field effect transistor memory. The memory comprises a gate electrode, a gate insulating layer, a charge transfer layer, a buffer layer and an organic heterojunction semiconductor layer sequentially distributed from bottom to top; a source electrode and a drain electrode are deposited on the organic heterojunction semiconductor layer; the organic heterojunction semiconductor layer comprises an n-type semiconductor and a p-type semiconductor, the n-type semiconductor and the p-type semiconductor are both organic materials; and the organic heterojunction semiconductor layer is prepared by cooperatively evaporating the n-type semiconductor and the p-type semiconductor. Compared with a multi-layer structure organic heterojunction device, the bulk heterojunction organic field effect transistor is simpler in preparation process; a bipolar storage characteristic can be achieved through electric programming, stable operation in the air can be achieved, limitation of the use environment is avoided, and the preparation cost is effectively reduced. The invention also discloses a method for preparing the bulk heterojunction organic field effect transistor.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a bulk heterojunction organic field effect transistor memory and a preparation method thereof. Background technique [0002] In recent years, the wide application of various organic compounds has provided broad prospects for the development of organic electronics. In such an environment, a series of organic devices such as organic light-emitting diodes, organic photovoltaic cells, and organic transistors have made great progress. significant progress. Organic field effect transistor is an important organic electronic component, which is widely used in electronic devices such as sensors, displays, and memories. Among them, organic field effect transistor memory has received extensive attention in the industry because of its superb flexibility, low cost, and compatibility with various materials. Therefore, the requirements for organic field effect transistor memory are also i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/28H01L51/05H01L51/40
CPCH10K19/10H10K71/164H10K10/486
Inventor 李志刚杨永豪路通
Owner LUDONG UNIVERSITY
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