12 results about "Thermal growth" patented technology

The invention provides a method for prolonging the high-temperature service life of a thermal barrier coating of a hydrogen-doped gas turbine. The method comprises the steps that Ni, Co, Cr, Fe, Al, Hf, Si and Y are smelted and cast into master alloy according to the proportion; preparing the mother alloy into high-entropy alloy powder through an inert gas atomization process; high-entropy alloy powder is deposited on the surface of the high-temperature alloy substrate by adopting a high velocity oxy-fuel spraying process, and a bonding layer of the thermal barrier coating is obtained; and preparing a thermal barrier coating on the bonding layer by adopting a plasma spraying process, and carrying out vacuum heat treatment on the thermal barrier coating in advance. The high-entropy alloy bonding layer provided by the invention has better thermal stability, and can still keep strong bonding force between the ceramic layer and the bonding layer alloy after water quenching high-temperature thermal cycle service. And the transition group high-entropy alloy bonding layer is beneficial to formation of a thermal growth oxide layer, has an inhibition effect on diffusion of metal elements and coating degradation in the hydrogen-induced corrosion and high-temperature steam corrosion processes, and can prolong the high-temperature thermal shock service time of the hydrogen-doped gas turbine.

The invention discloses a preparation method and application of an ultra-thin glass through hole TGV, and belongs to the technical field of three-dimensional integration, MEMS devices and advanced packaging. According to the technical scheme, the front face of the silicon wafer is etched to form a high-density blind hole template, then oxidation is carried out for a long time in a wet oxygen environment, silicon around the blind holes is converted into thermal growth SiO2 in situ, then copper columns are prepared in the blind holes to form a copper / SiO2 coplanar bonding level interface, mixed bonding with Cu-Cu + SiO2-SiO2 of a butt-joint wafer is achieved, silicon is removed from the back face till copper is exposed, and finally the high-density blind hole silicon wafer is obtained. And forming the ultra-thin TGV through structure. Different from the route that holes are firstly formed in glass in the prior art, the method does not directly process ultra-thin glass, blind holes and vitrification are completed on silicon, and then metallization and bonding are performed, so that coplanarity / roughness and mass production consistency required by an ultra-thin TGV are obtained on a 8-12-inch silicon platform.

The invention relates to a finite element simulation method for thermal growth oxide phase change of an environmental barrier coating, and belongs to the technical field of aero-engine thermal barrier coating system simulation. According to the method, a coating interface contour is extracted through a real electron microscope graph, and overall modeling of each coating and a substrate is carried out in finite element software. And in finite element software, cleaning and creating a geometric model, and carrying out analog computation and result analysis. Meanwhile, phase change related codes are written through a secondary development program interface, the phase change behavior of a thermal growth oxide (TGO) is introduced into finite element simulation, the stress field change and the coating damage process in the TGO phase change process are accurately simulated, and coupling solving can be conducted with other physical fields.

This invention discloses a fault early warning method for energy storage converters based on intelligent sensors, belonging to the field of energy storage fault early warning technology. The method includes: collecting branch currents, power device temperatures, and operating parameters of each parallel branch to form an original multi-source time-series dataset; calculating the current imbalance sequence and power device temperature rise rate sequence of each parallel branch based on the original multi-source time-series dataset, and extracting ambient temperature, cumulative charge / discharge cycles, and real-time load rate as operating condition correction factors from the original multi-source time-series dataset; calculating the cumulative current deviation and cumulative heat growth within the corresponding monitoring period based on the current imbalance sequence and power device temperature rise rate sequence, and combining the cumulative current deviation and cumulative heat growth according to the branch number to generate a branch-level coupling feature sequence. This invention achieves dual-closed-loop adaptive adjustment and self-evolution of the early warning boundary.

The invention relates to the technical field of nano material preparation, in particular to a method for preparing CuInS ternary chalcogenide semiconductor quantum dots, which is characterized by comprising the following steps: (1) precursor configuration, (2) ultraviolet-assisted multi-stage thermal growth, and (3) post-treatment: generating a photo-clipping effect by introducing ultraviolet light irradiation, shortening the chain length of a surface ligand, and obtaining the CuInS ternary chalcogenide semiconductor quantum dots. The CuInS quantum dot with the pure-phase chalcopyrite structure and the preparation method thereof have the advantages that the CuInS quantum dot with the pure-phase chalcopyrite structure and fluorescence QY exceeding 80% is obtained, the quantum yield is high, non-radiative recombination centers are reduced or eliminated, the crystallinity is high, the phase purity is high, components are accurate and the like, and intermediates (such as metal thiolate mesocrystal phases) in the synthesis process are regulated and controlled.

The invention relates to a low-Al refractory high-entropy alloy system for catalyzing thermal growth of an alpha-Al2O3 oxidation film through Si. The low-Al refractory high-entropy alloy system is composed of six elements which can be expressed as (TaMoCrR) 100-xSixAl5-10 (R = W, Nb, Hf, V, Zr and Ti) according to the arrangement of element melting points from high to low, the content of Al in the alloy is 5-10 at%, the content of Si is correspondingly adjusted in the range of 45-25 at%, the balance is Ta, Mo, Cr and R, the content of the four elements is close to the equal atomic ratio, and the alloy mixed entropy is larger than 1.5 R. The refractory high-entropy alloy is composed of a high-Al FCC solid solution phase and two low-Al hexagonal structure silicide phases Rm5Si3 (Rm = TaMoCrRAl), one of the low-Al hexagonal structure silicide phases is the Rm5Si3 phase according with the stoichiometric ratio of 5: 3, and the other of the low-Al hexagonal structure silicide phases is the Rm5Si3 phase with insufficient Si. The refractory high-entropy alloy system prepared through the method can thermally grow a single alpha-Al2O3 oxidation film with protection in dry air at the temperature of 1300-1500 DEG C and in the environment containing water and oxygen, the alpha-Al2O3 film is still well combined with a base body after circulating oxidation is conducted for 20 h at the temperature of 1400 DEG C, and the cracking phenomenon is avoided.

An industrial furnace burner block assembly is presented herein. The assembly includes a mounting plate defining a fire tube extending there from. A plurality of tabs extend from the mounting plate and engage a corresponding groove or slot formed on a refractory burner block. The burner block includes four block sections that each allow for independent thermal growth during operation. The burner block also defines a center aperture collectively formed by corresponding internal surfaces of the independent block sections. A sealing ring is mounted within a groove in the burner aperture and is disposed in a sealing relation with an external surface of the firing tube. A tongue-and-groove connection assembly is formed on mating surfaces between adjacent burner block sections. The tongue-and-groove connection assembly and the sealing ring each provide a gas-tight seal that restricts gas bypassing.

The invention discloses a turbine blade thermal barrier coating real-time life prediction method based on acoustic emission and a physical neural network. The method comprises the steps that 1, acoustic emission signals of the thermal barrier coating of the turbine blade are detected and recorded in real time through acoustic emission detection equipment; secondly, the damage degree D of the thermal barrier coating of the turbine blade is obtained; step 3, identifying the acoustic emission signal by using a clustering analysis method to obtain shear type interface crack acoustic emission energy Etau, and obtaining energy time sequence data Etau (t); 4, establishing a numerical analysis model of the thermal barrier coating microstructure, obtaining strain energy distribution of the coating, and calculating to obtain the strain energy release rate of the thermal growth oxide layer; 5, predicting the acoustic emission energy of the blade shear type interface crack based on a life prediction model of a physical information neural network (PINN); and 6, predicting the service life of the thermal barrier coating of the turbine blade according to the acoustic emission signal. According to the invention, online dynamically updated thermal barrier coating residual life prediction can be realized.

The application provides a preparation method of a thermal barrier coating alpha-Al2O3 thermal growth oxide, and belongs to the technical field of surface engineering. The preparation method comprises the following steps: preparing an MCrAlY bonding layer on the surface of a sample; cleaning the surface of the MCrAlY bonding layer; heating the MCrAlY bonding layer to a first preset temperature at a heating rate of 50-80 DEG C / s, and performing first heating treatment on the MCrAlY bonding layer, so that an alpha-Al2O3-based TGO film with a first thickness is generated on the surface of the MCrAlY bonding layer; cooling to a second preset temperature, and performing second heating treatment on the MCrAlY bonding layer, so that the alpha-Al2O3-based TGO film on the surface of the MCrAlY bonding layer continues to grow to a second thickness. The method adopts rapid heating and segmented heat treatment technology, can be used for producing and preparing the thermal barrier coating with the alpha-Al2O3 thermal growth oxide in an atmospheric environment, and has the advantages of simple process, low implementation difficulty, low production cost, reduced thermal growth stress, effectively prevented premature failure of the coating, and satisfaction of the pre-oxidation technical requirements of the thermal barrier coating of a turbine blade.

The invention discloses a method for controlling the growth of an oxidation film by modifying the surface structure of an anti-oxidation coating, which comprises the following steps of: firstly, pretreating a high-temperature alloy matrix, then preparing the anti-oxidation coating with the thickness of 10-40 microns by adopting a vacuum arc plating, thermal spraying or chemical vapor deposition process, and carrying out vacuum diffusion heat treatment. According to the core step, shot blasting treatment with specific parameters is adopted for modifying the surface of the coating, the shot blasting pressure ranges from 0.2 MPa to 0.3 MPa, the shot blasting angle ranges from 20 degrees to 90 degrees, the shot blasting distance ranges from 100 mm to 200 mm, and shot materials are metal or ceramic materials. According to the method, the surface roughness of the coating is effectively reduced through shot blasting treatment, and the compactness and smoothness of the coating are improved, so that inward diffusion of oxygen atoms is inhibited in the high-temperature oxidation process, formation of an abnormal oxidation zone is avoided, and a thermal growth oxidation layer is promoted to present a uniform and slow growth form.

The invention provides a super junction SGT MOSFET manufacturing method comprising the following steps: providing a substrate and forming an epitaxial layer, the epitaxial layer is doped with first and second conductive type impurities, and the concentration of the second type is higher than that of the first type; etching a groove; the method comprises the following steps: thermally growing a dielectric layer on the inner wall of a groove, and utilizing the difference of segregation coefficients of two impurities in the dielectric layer and an epitaxial layer to enable first type impurities to be gathered on an interface and second type impurities to be consumed, so that conduction type inversion occurs in a region adjacent to the inner wall of the groove, a first type doped region surrounding the groove is formed, and a super junction structure is formed; and then manufacturing a shield gate, a control gate and a source-drain electrode. The super junction is naturally formed by using the impurity segregation effect, high-energy injection or multi-time epitaxy is not needed, the method is compatible with the existing SGT process, the cost is remarkably reduced, and the device performance is improved.

The invention relates to the field of bonding layers of thermal / environmental barrier coatings, in particular to a layered hafnium silicate bonding layer which is low in annealing temperature, good in high-temperature phase stability, good in oxidation resistance and matched with the thermal expansion coefficient of a silicon carbide ceramic-based composite material and a preparation method of the layered hafnium silicate bonding layer. The preparation method comprises the following steps: by taking hafnium oxide and silicon oxide as raw materials, firstly preparing hafnium silicate raw material powder through a solid-phase reaction method, then preparing hafnium silicate suspension liquid through a ball milling process, and then carrying out plasma spraying on the suspension liquid, thereby preparing the hafnium silicate bonding layer. Compared with a traditional silicon bonding layer, the novel bonding layer has the advantages that the service temperature is higher, the coating cannot be oxidized to generate thermal growth oxide, and the thermal expansion coefficient of the novel bonding layer is matched with that of a silicon-based ceramic composite material. The novel bonding layer has the remarkable characteristic that the coating also has a unique uniform layered microstructure. The preparation process is simple, the operability is high, the coating performance is good, and the industrial production prospect is wide.