An interconnected spin majority gate device based on a magnetic
tunnel junction comprises, from the surface to the substrate, a top
electrode layer, a magnetic pinning layer, an insulating tunneling layer, a first magnetic
magnetization free layer FL1, an isolation
coupling layer, a second magnetic
magnetization free layer FL2, a heavy
metal layer, and a bottom
electrode layer. The magnetic pinning layer consists of a
magnetic layer and a coupled antiferromagnetic layer. An isolation
coupling layer is provided between the first and second magnetic
magnetization free
layers to separate them. The magnetic pinning layer, the insulating tunneling layer, and the magnetic magnetization free
layers constitute a magnetic
tunnel junction. The magnetization direction of the magnetic magnetization free
layers is controlled by the spin-transfer torque effect generated by the current, and logic is implemented by the exchange
coupling effect of the interconnected magnetic magnetization free layers. The device includes four dual-magnetization free layer magnetic tunnel junctions sharing a common magnetic magnetization free layer, denoted as the first, second, and third inputs MTJ and the output, respectively. The device has a cross shape with four branches, three of which are input branches and the fourth
branch is the output
branch.