51results about How to "Achieve high-density integration" patented technology

The invention provides a Ka-band tilt-structure active phased array antenna, so as to provide an active phased array antenna which is high in integration density and can improve maintainability and interchangeability. According to the technical scheme, one path of RF signals transmitted by a transmitting signal processing terminal are transmitted to a power distribution / synthesis network (5) via a signal interface and a radio frequency interface to be divided into M paths of signals; according to information of an azimuth angle and a pitch angle of the phased array antenna provided by the transmitting signal processing terminal in real time, a beam controller (4) calculates and obtains beam pointing of the phased array antenna in real time through an FPGA; the beam pointing of the phased array antenna is converted into phase data needed by each array element under control of the beam controller (4); the data are transmitted to tilt-type TR assembly sub array modules in N channels respectively via a high and low-frequency interconnected multi-core high and low-frequency socket, and under control of the beam controller, M*N paths of signals are transmitted to an antenna array, and thus signal transmission is completed, and synchronous electric control scanning of beams transmitted by the phased array antenna is realized.

The invention discloses an annular semiconductor laser of a vertical coupling structure and a preparing method thereof. An annular active resonator cavity is any one closed loop composed of ridge type waveguide and strip type waveguide, a P type electrode and an N type electrode are arranged on the annular active resonator cavity, laser light in the annular active resonator cavity is coupled to strip type straight waveguide through a vertical coupler, and the strip type straight waveguide outputs the laser light. An N type lower wrapping layer, a first gradual-change refractive index limiting layer, a first barrier layer, a multiple quantum well active layer, a second barrier layer, a second gradual-change refractive index limiting layer, a P type upper wrapping layer and a P type contacting layer which have preset thicknesses and concentration are successively formed by means of a metal organism chemical vapor deposition or molecular beam epitaxy method. A plurality of epitaxial layers are etched by using a SiO2 image as a mask, the etching depth is less than or equal to a first height and greater than or equal to a second height, and the annular active resonator cavity is transferred to a chip. The obtained annular semiconductor laser has the advantages of being simple in process, low in cost, stable in performance of parts, high in reliability and the like.

The invention relates to the technical field of a transmit-receive frequency conversion channel, and discloses a millimeter wave 16-channel transmit-receive frequency conversion channel assembly, which mainly adopts a mixed design of an MMIC bare chip and an LTCC circuit and realizes a microminiature design through one or more frequency conversion. The transmit-receive frequency conversion channel assembly is in a three-layer structure on the whole, wherein the upper layer comprises a power control portion, the middle layer is a frequency conversion circuit portion and the lower layer comprises 16 paths of waveguide interfaces. The frequency conversion circuit portion comprises 16 paths of receiving channels, one path of emission channel and a local oscillator processing circuit. The receiving channels and the emission channel share the 16 paths of waveguide interfaces; transmit-receive time-sharing power supply is realized; channel switching is carried out through a radio frequency switch; power supply and control signals between the layers are connected through a miniature low-frequency connector; radio frequency signals are connected through a radio frequency isolator; and the layers are internally connected through via holes. Therefore, the millimeter wave 16-channel transmit-receive frequency conversion channel assembly realizes high-density integration of millimeter wave multi-channel transmit-receive frequency conversion channels, is small in size, light in weight and high in environment adaption capability, improves working stability and reliability of the system in various environment conditions, and meets the future trend of transmit-receive frequency conversion channel miniaturization.

The invention discloses a nonvolatile memory with a multi-layer nanocrystal floating gate structure, which belongs to the technical field of the nonvolatile memory. The nonvolatile memory comprises a semiconductor substrate 11 used for supporting the entire nonvolatile memory, a source 9 and a drain 10 which are formed in the semiconductor substrate 11 in a doped way, a channel 12 between the source 9 and the drain 10, a tunneling oxidizing layer 13 positioned on the channel 12, a control oxidizing layer 14 used for controlling oxidation of the multi-layer nanocrystal floating gate structure, a gate electrode 16 positioned on the control oxidizing layer 14 and a multi-layer nanocrystal floating gate structure 15 positioned between the tunneling oxidizing layer 13 and the control oxidizing layer 14 and used as the floating gate storage unit of the nonvolatile memory. The invention also discloses a method for preparing the nonvolatile memory with the multi-layer nanocrystal floating gate structure. The invention solve the contradiction between the programming time / voltage of the single-layer nanocrystal floating gate memory and the storage time, and increases the storage time of the element under the precondition of shorter programming time.

The invention discloses a PoP (Package on Package) automatic stacking system and method. The PoP automatic stacking system comprises a pick-up suction head, a stacking mold base, an image recognition system and a dispensing system, wherein the pick-up suction head recognizes and positions planar circuits through the image recognition system, and fixes the planar circuits to the stacking mold base in a stacking way; and after being dispersed through the dispensing system, the planar circuits are heated and pressed to perform interlayer mounting. The PoP automatic stacking system and method have relatively high extensibility, and can be widely applied to implementation of high-accuracy three-dimensional automatic laminated assembly of various TSOP (Thin Small Outline Package) packaged single-chip devices and planar circuit assemblies. Mechanization of a full set of stacking actions is realized, so that the laminating efficiency, yield and product quality consistency can be increased and improved through stability and accuracy of mechanical equipment. The PoP automatic stacking system and method have very wide application prospects.

The invention relates to a laser processing head, which comprises a processing head matrix and laser processing function units arranged on the matrix. The processing head matrix is formed by assembling at least two plate units obtained by open processing, and the laser processing function units are integrated on the plate units. The matrix of the laser processing head is assembled by the plate units obtained by the open processing, and the laser processing function units are integrated on the matrix, so high-intensity integration of the laser processing function is realized, the cost is reduced, and miniaturization and microminiaturization are realized.

The present invention relates to the technical field of transmit-receive frequency conversion channels, especially to a 16-channel digital multi-beam transmit-receive front-end module. The module comprises a receiving antenna, a transmission antenna, a 16-path receiving channel, a 1-path transmission channel, a 3-path test clock module, a 1-path local oscillator module, a heat dissipation module and a power control module. A transmission channel of the 16-path receiving channel is in signal connection with a receiving antenna, the transmission channel is in signal connection with a transmission antenna, the 16-path receiving channel is connected with the heat dissipation module, the local oscillator module is in signal connection with the transmission channel, the power control module supplies power to the transmission channel, the local oscillator module and the 3-path test clock module, the 3-path test clock module and the 1-path local oscillator module are frequency sources, and each structure is in multi-layer three-dimensional hard connection. The high-density integration, the small size, the light weight and the good stability of the Ku waveband multi-channel digital multi-beam transmit-receive front-end module can be achieved to meet multi-aspect requirements of multi-wave transmit-receive test.

The invention relates to a flexible two-dimensional material light emitting device. The flexible two-dimensional material light emitting device sequentially comprises a flexible substrate layer (1), a first metal layer, a medium layer (4), a two-dimensional semiconductor material layer (5) and a second metal layer which is arranged on the medium layer (4) and at two ends of the two-dimensional semiconductor material layer (5). Compared with the prior art, the flexible two-dimensional material light emitting device has advantages of good portability, fast photoelectric response speed, high integration density, good processing performance and low cost.

The invention discloses a method for preparing an embedded micro-nano channel, and relates to micro-nano processing technology. The method comprises the steps of (1) cleaning a substrate; (2) preparing a support sacrificial layer with the cross sectional dimensions on nanoscale; (3) putting and fixing the processed sample by the step (2) in a device; (4) observing graphics to find the position of the nanostructure of the support sacrificial layer; and (5) depositing a tungsten covering layer on the support sacrificial layer through an ion beam-assisted deposition technology. The preparation method is based on a phenomenon of disappearance of the nanostructure of the support sacrificial layer to prepare the embedded micro-nano channel after the tungsten covering layer is deposited by aid of the ion beam, is flexible in process, has high efficiency and good controllability, and is a manufacturing method for the micro-nano channels with any shape inside a material body.

The invention discloses a wavelength demultiplexing device based on an on-chip super lens structure. The wavelength demultiplexing device comprises an input waveguide, a collimating super lens, a dispersion focusing super lens and an output waveguide array, light entering from the input waveguide is changed into parallel light through the collimation super lens, and the parallel light is deflected through the dispersion focusing super lens and is focused and coupled to the output waveguide array. Light with different wavelengths has different deflection angles after passing through the dispersion focusing super lens, so that the light can enter output waveguides at different positions, and wavelength demultiplexing is realized. According to the invention, a super-lens structure is adopted to flexibly control a light wave phase plane, a super-compact wavelength demultiplexer can be realized, and silicon substrate integration is easy.

The invention relates to a micro rectangular multi-core connector with an air-tight seal. The micro rectangular multi-core connector comprises a shell and an air-tight seal socket, the air-tight sealsocket comprises pins, an insulating medium and an adapter plate, the adapter plate is provided with array through holes and boss structures, the pins are sintered in the through holes of the adapterplate side by side, the insulating medium is filled between the pins and the adapter plate to form the air-tight seal socket, and the air-tight seal socket is positioned in the shell through the bossstructures on the upper portion of the adapter plate and is fixedly and hermetically connected to the shell by brazing. The problem of thermal mismatch between the aluminum box body and the micro-rectangular multi-core connector is solved by selecting a material of which the thermal expansion coefficients are gradually increased and adding a thermal matching buffer structure, so that the air tightness and the reliability of electronic component packaging are ensured. The micro-rectangular multi-core connector and the aluminum box body are installed and fixed by welding, so that high-density integration of low-frequency connection is realized, and the packaging volume is reduced, the temperature resistance of the micro-rectangular connector prepared by the method is higher than 220 DEG C, and the process compatibility is good.

The invention relates to a method for preparing a single-layer multilayer graphene thermoelectric detector through laser ablation. The method comprises the following steps that an insulating dielectric layer is grown on substrate material; a layer of multilayer graphene film is transferred from the insulating dielectric layer; laser ablation is performed on a part of multilayer graphene films so that a part of multilayer graphene films become a single layer of graphene film; and a first metal electrode is deposited on one end of the multilayer graphene films without ablation and a second metalelectrode is deposited on one end of the single layer of graphene film obtained through laser ablation so that the single-layer multilayer graphene thermoelectric detector can be obtained. The multilayer graphene and the single-layer graphene have the seebeck coefficient difference, and the thermal voltage is generated because of temperature difference at the heterojunction interface due to the interlayer thermal conductivity difference between the substrate and the graphene in case of light irradiation so that the thermal current can be detected at the first and second metal electrodes. Theconstructed thermoelectric detector has the advantages of simple manufacturing method, small volume and high detection sensitivity.

The invention discloses a high-integration multi-channel tile type T / R assembly and an arrangement method. The high-integration multi-channel tile type T / R assembly is in a square shape. A bottom plate, a cover plate, a front plate, a rear plate, a left plate and a right plate are used as walls to form a mounting cavity; the method is characterized in that n groups of first connectors are mountedon the bottom plate, wherein each group of first connectors consists of a receiving connector and a transmitting connector, each group of first connectors are respectively vertical to the bottom plate, a group of second connectors are arranged on the cover plate, the second connectors are combination ports for receiving output and transmitting input, a through groove is arranged on the cover plate, and three layers are arranged in the mounting cavity. According to the invention, multiple radio frequency channels are integrated to realize miniaturization, the profile height of the active phased-array antenna can be effectively reduced, and a heating device in the T / R assembly clings to the heat sink to achieve the purpose of rapid heat conduction.

The invention discloses a 2.5D multi-chip packaging structure of an integrated antenna structure. The 2.5D multi-chip packaging structure comprises a substrate; a multi-chip plastic package layer, wherein the multi-chip plastic package layer is arranged on the substrate; a reflection interconnection layer, wherein the reflection interconnection layer is arranged on the multi-chip plastic package layer; an antenna isolation layer, wherein the antenna isolation layer is arranged on the reflection interconnection layer; the antenna array arranged on the upper surface of the antenna isolation layer; a wiring layer rearranged at the back surface of the substrate arranged at the lower portion of the substrate; an external solder balls arranged to be electrically connected with the external bonding pads of the wiring layer rearranged at the back surface of the substrate; and a passivation layer, wherein the passivation layer covers the wiring layer rearranged at the back surface of the substrate.

The invention discloses a self-selection resistive random access memory suitable for an intersected array, and a reading method thereof. The self-selection resistive random access memory employs a quite thin active electrode, has a volatile low resistance state, through combination with a quite small current-limiting value and specific reading operation, when being applied to a cross intersected array, can inhibit leakage currents, and realizes selection-free high-density integration of a resistance variable unit.

The invention is applicable to the technical field of bonding pad preparation, and provides a solder resist preparation method and structure for integrating a BGA bonding pad on the surface of a substrate, and the method comprises the steps: sputtering a plurality of layers of metal on a substrate to obtain a seed layer, and electroplating a gold layer on the seed layer; electroplating a composite metal structure on the gold layer to obtain a bonding pad, and etching the bonding pad to form a solder resist ring for welding solder balls to obtain a first sample; carrying out first preset temperature air annealing on the first sample,preparing an organic solder resist ring on the periphery of the pad on surface of the first sample after annealing and at position covering the solder resist ring, and carrying out baking at second preset temperature; and soldering solder balls on the pad within the range of the organic solder resist ring. The electroplated gold layer is sputtered on the substrate to serve as the conductor layer on the surface of the substrate, so that the wiring density can be improved; according to the embodiment of the invention, the bonding pad is prepared by adopting a full-addition layer-by-layer electroplating mode, the size precision is high, and the digital circuit chip is welded on the bonding pad in the radio frequency tube shell through the solder ball, so that high-density integration is realized.

The invention provides an optical fiber assembly applied to silicon photonic optical communication. The optical fiber assembly comprises an optical fiber array unit and a core inserting assembly. Theoptical fiber array unit comprises a coupling end surface, a glass cover plate, a glass substrate, a small-mode-field optical fiber and a normal-scale-field optical fiber. The small-mode-field opticalfiber is connected with the normal-scale-field optical fiber in a welding mode. The small-mode-field optical fiber is fixed between the glass cover plate and the glass substrate, and the end surfaceof the small-mode-field optical fiber is polished to form the coupling end surface of the optical fiber array unit. The normal-scale-field optical fiber at the other end of the optical fiber array unit is assembled into the core inserting assembly. According to the invention, the optical fiber assembly is low in manufacturing cost. Through the fusion welding of optical fibers of different mode-field diameters, the small-mode-field optical fiber can be directly connected with a silicon optical chip. Since no lens is required, the assembling difficulty is reduced. Meanwhile, the optical fiber assembly is high in assembling efficiency and small in size. The transmission performance of optical signals can be ensured.

The invention discloses a multi-functional device based on dual Mach-Zehnder interference structures. A second Mach-Zehnder interference structure is sleeved on a phase shift arm of a first Mach-Zehnder interference structure; a digital signal in divided into two paths, wherein one path is loaded on a phase shift arm of the second Mach-Zehnder interference structure, and the other path is loaded on another phase shift arm of the second Mach-Zehnder interference structure through a phase inverter so as to realize the opposite phase change of an absolute value in the same direction according to the push-pull modulation principle and the functions of a digital optical switch and a multi-code pattern modulator of each of inputted different complete devices. The digital optical switch is large in production tolerance, simple in realization and stronger in anti-noise property; and the multi-code pattern modulator simultaneously modulates an upload signal in a network node into two code patterns, i.e. OOK (On-Off Keying) and BPSK (Binary Phase Shift Keying) and is high in speed and compact in structure. In conclusion, the multi-functional device is novel and compact in structure and larger in bandwidth and provides a new choice for the modulation and the switching treatment of a flexible and complicate optical network.

The invention provides a static random access memory and an implementation method thereof. The static random access memory comprises a storage array. The storage array comprises a plurality of storage unit pairs; two storage units are included in each storage unit pair; power traces of the two storage units are superposed, and through holes of the power traces are superposed. The static random access memory can realize the high-density integration of the storage array, and reduces the design area and the design cost of a chip.

Provided is a method for manufacturing a COB light source. The method comprises the steps that (1), die bonding is conducted on a substrate; (2), a fluorescent film is formed on the substrate; (3) thefluorescent film is fixed on the substrate to form the COB light source; a forming method of the fluorescent film includes the steps of (1), conducting in-mold injection molding to form grids, and dispensing fluorescent glue in filling areas of the grids; (2), conducting injection moulding to form grids, and dispensing fluorescent glue in filling areas of the grids; (3), conducting aluminum sheetpunch forming to form grids, and dispensing fluorescent glue in filling areas of the grids. The method has the advantages of simple structure and simple manufacturing process, all chips are blue light chips, and the chips are firstly die-bonded on the substrate to achieve high-density integration of the LED chips.

The invention relates to the field of electrical connection, specifically a rectangular integrated radio frequency connector. The connector uses its front end as the connecting end. The connector consists of a shell and connectors, wherein the connectors are inserted in radio frequency holes of the shell from rear to front and are fixed to the shell through fixing parts, and each connector is provided with a step surface facing rearwards; each fixing part consists of a base plate and a positioning spring strip, the base plate is fixed to the outside of the shell, and the spring strip is arranged on the base plate and extends to corresponding radio frequency hole through the shell; the positioning spring strip forms a barb structure, and the barb structure matches the step surface of the corresponding connector. The connector adopts the structure that the fixing parts do not affect the bore diameter of the radio frequency holes of the shell, and thus, the objective of the high-density integration of the rectangular integrated radio frequency connector can be achieved. When the connectors need to be dismantled, one only needs to force the positioning spring strips to contract by inserting tools from the rear ends of corresponding radio frequency holes, and then pull the connectors rearwards.

The invention discloses a Q / V frequency band low orbit satellite tile type phased array receiving standard subarray. The subarray comprises an antenna housing, an antenna array surface, a tile type phased array receiving module, a synthetic network and a shell, the antenna housing is made of an electromagnetic metamaterial capable of effectively improving the large-angle scanning circular polarization axial ratio; the antenna array surface comprises a plurality of antenna units; the tile type phased array receiving module takes a multi-channel multifunctional chip as a main body, and amplification, phase shift and attenuation functions are integrated in the chip. The modular multi-beam phased array antenna has the characteristics of flexible beam switching, simultaneous multi-beam and large-angle scanning, low circular polarization axial ratio, high integration level and reliability and modularization, can be freely spliced, and provides convenience for constructing phased arrays of any scale.

An organic substrate embedding and packaging structure integrating an antenna and a radio frequency front end comprises: an antenna module; a radio frequency front-end module which is arranged below the antenna module and comprises a first core plate, wherein at least one through groove is arranged in the first core plate; at least one active chip, wherein the surface of one side of the active chip is an active surface, the surface of the other side of the active chip is back metal, and the active chip is buried in the through groove of the first core plate; a first dielectric layer which is arranged below the first core plate, wherein a through groove is formed in the position, corresponding to the through groove in the first core plate, of the first dielectric layer; a second core platewhich is arranged below the first dielectric layer, wherein a plurality of component bonding pads are arranged on the upper surface of the second core plate, one side of the active surface of the active chip faces downwards and is inversely arranged on the component bonding pad on the upper surface of the second core plate; a second dielectric layer which is arranged above the first core plate, wherein a plurality of metallized blind holes are formed in the second dielectric layer in a penetrating mode.

A circuit board structure (10), an electronic product, and a preparation method and a maintenance method of the circuit board structure (10) are provided. At least two substrates of the circuit board structure (10) are stacked, and each substrate is provided with an electronic component (13); the at least two substrates are stacked at intervals through a connecting structures (11); before at least one electronic component (13) is soldered to a substrate, a solder body (12) having a connecting solder ball (121) and a solder paste layer (122) is provided in the electronic component (13).

The invention discloses a memorizer device, and belongs to the micro electronic technology and the technical field of memorizer devices. The memorizer device is structurally composed of a resistance transformation memory unit and a selection unit above the resistance transformation memory unit. The resistance transformation memory unit comprises a bottom layer electrode, a resistance transformation memory layer located above the bottom layer electrode, and an upper electrode located above the resistance transformation memory layer. The selection unit is composed of two Schottky diodes which are connected in an anti-parallel mode. The memorizer device can effectively solve the reading crosstalk problem of a bipolar resistance transformation device in a cross array, and high-density integration of the bipolar resistance transformation device can be achieved.

The invention provides a fan-out type packaging structure and packaging method. The packaging structure comprises a first rewiring layer, a first bottom filling adhesive layer, an electronic assembly, a first packaging adhesive layer, a heat dissipation layer, a second rewiring layer, a second bottom filling adhesive layer and a second packaging adhesive layer, wherein the electronic assembly comprises at least one chip or electronic element; and the first packaging adhesive layer wraps the first bottom filling adhesive layer and the side face of the electronic assembly, and the second packaging adhesive layer wraps the first packaging adhesive layer, the second bottom filling adhesive layer and the side face of the first rewiring layer. According to the packaging method, the electronic component is primarily packaged through the first rewiring layer and the first packaging adhesive layer, a traditional substrate is replaced by the second rewiring layer, the primarily packaged electronic component is packaged again through the second rewiring layer and the second packaging adhesive layer, the manufacturing process is improved, and the manufacturing time is shortened; and in addition, high-density integration of devices can be realized, and various electronic components and chips can be packaged at the same time.

The invention discloses a mobile electronic equipment automatic docking method, a docking device, mobile electronic equipment and a storage medium, and the method comprises the steps: collecting alignment detection signals detected by at least two signal receiving devices, and carrying out the detection filtering of the alignment detection signals, and obtaining at least two voltage amplitudes, wherein the alignment detection signals are transmitted by triggering at least two signal transmitting devices when the docking device detects the mobile electronic equipment; selecting two non-repetitive elements from at least two voltage amplitudes, obtaining a non-repetitive combination, and calculating a difference value between the two voltage amplitudes in each non-repetitive combination to obtain an amplitude difference; judging whether all the amplitude difference is within a preset threshold range or not, and if yes, controlling the mobile electronic equipment to execute a butt-joint insertion action; otherwise, controlling the mobile electronic equipment to adjust the posture of the mobile electronic equipment until all the amplitude differences are within a preset threshold range,and then controlling the mobile electronic equipment to execute a butt-joint insertion action. According to the invention, rapid alignment between the mobile electronic equipment and the docking device can be realized and the alignment precision is improved.

The invention discloses a self-selection resistive memory suitable for a cross array and a reading method thereof. The self-selection resistive memory of the present invention adopts thinner active electrodes, has a volatile low-resistance state, combines a smaller current limit value and specific read and write operations, and can suppress leakage current when applied in a cross array to realize resistance change Units are integrated in high density without selector tubes.