Memorizer device

A memory and device technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as read crosstalk in bipolar resistive memory cells, achieve high-density integration, and inhibit read crosstalk.

Inactive Publication Date: 2014-02-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of this, the main purpose of the present invention is to provide a memory device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memorizer device
  • Memorizer device
  • Memorizer device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0019] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings. The drawings and descriptions provided herein are for purposes of illustration only of embodiments of the present invention. The shapes and dimensions in the respective drawings are for schematic illustration only, and do not strictly reflect actual shapes and dimensions. Furthermore, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures, the representations in the figures are schematic and not intended to limit the scope of the invention.

[0020] image 3 is a schematic structural diagram of a memory device according to an embodiment of the present invention, wherein image 3 (a) shows a schematic diagram of the basic structure of the memory device of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a memorizer device, and belongs to the micro electronic technology and the technical field of memorizer devices. The memorizer device is structurally composed of a resistance transformation memory unit and a selection unit above the resistance transformation memory unit. The resistance transformation memory unit comprises a bottom layer electrode, a resistance transformation memory layer located above the bottom layer electrode, and an upper electrode located above the resistance transformation memory layer. The selection unit is composed of two Schottky diodes which are connected in an anti-parallel mode. The memorizer device can effectively solve the reading crosstalk problem of a bipolar resistance transformation device in a cross array, and high-density integration of the bipolar resistance transformation device can be achieved.

Description

technical field [0001] The invention relates to the technical fields of microelectronics and memory devices, in particular to a memory device composed of a bipolar resistive switching memory unit and two reverse-parallel Schottky diode selection units. Background technique [0002] With the increasing popularity of portable personal devices such as mobile phones and notebook computers, non-volatile memory plays an increasingly important role in the semiconductor industry. Due to the disadvantages of the current mainstream flash memory (Flash) non-volatile memory in the process of reducing the size of semiconductor devices, such as large operating voltage, slow operating speed, insufficient endurance, and insufficient memory time, this largely limits its use. It is widely used in the market and high-tech fields, so the development of new non-volatile memories with better performance has become a current research hotspot. [0003] The newly developed non-volatile memories inc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/10
Inventor 刘明李颖弢龙世兵吕杭炳刘琦
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap