Resistive random access memory and preparation method thereof

A technology of resistive memory and functional layer, applied in the direction of electrical components, etc., can solve problems such as read crosstalk, achieve the effect of improving storage density, simple structure, and suppressing read crosstalk

Inactive Publication Date: 2013-02-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the main purpose of the present invention is to provide a resistive memory and

Method used

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  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof

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Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0019] The drawings and their descriptions provided herein are only for illustrating embodiments of the present invention. The shapes and dimensions in the respective drawings are for schematic illustration only, and do not strictly reflect actual shapes and dimensional ratios. Furthermore, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures, the representations in which are schematic and are not intended to limit the scope of the invention.

[0020] Such as figure 2 as shown, figure 2 It is a schematic diagram of the basic structure of the resistive memory provided by the present invention. The resistive memory includes a substrate...

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Abstract

The invention discloses a resistive random access memory and a preparation method thereof, relating to the technical field of micro-electronics and storages. The resistive random access memory comprises a substrate, a lower electrode formed on the substrate, a first functional layer film formed on the lower electrode, an intermediate electrode formed on the first functional layer film, a second functional layer film formed on the intermediate electrode, and an upper electrode formed on the second functional layer film. The resistive random access memory provided by the invention can effectively inhibit the read crosstalk in a cross array of the resistive random access memory in the prior art, and is beneficial to integration of a cross array structure. In addition, the resistive random access memory provided by the invention has the advantages of simple structure and easy integration, and is beneficial to wide popularization and application.

Description

technical field [0001] The invention relates to the technical field of microelectronics and memory, in particular to a resistive variable memory and a preparation method thereof. Background technique [0002] Non-volatile memory is a type of memory that is widely used and generally recognized at present. Its biggest advantage is that the stored data can still be kept for a long time when there is no power supply. With the increasing popularity of portable personal devices such as mobile phones, MP3, MP4 and notebook computers, non-volatile memory plays an increasingly important role in the semiconductor industry. Due to the disadvantages of the current mainstream non-volatile memory Flash in the process of reducing the size of semiconductor devices, such as large operating voltage, slow operating speed, insufficient durability, and insufficient memory time, this largely limits its market and Due to the wide application in high-tech fields, the development of new non-volatil...

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Application Information

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IPC IPC(8): H01L45/00
Inventor 刘明李颖弢龙世兵吕杭炳刘琦王明张康玮
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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