One time programmable memory and preparation method thereof

A technology of memory and programming current, applied in read-only memory, static memory, information storage, etc., can solve the problems of misreading, affecting the commercial use of memory, serious problem of read crosstalk in one-time programming memory, etc., to reduce costs, suppress read crosstalk, Effects for easy integration
CN103106926AInactive Publication Date: 2013-05-15INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2013-05-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a one time programmable memory and a preparation method thereof. The one time programmable memory provided by the invention comprises a lower electrode, a lower electrode and a resistive functional film formed between the upper electrode and the lower electrode. A Schottky barrier is formed between the upper electrode and the resistive functional film; and an ohmic contact is formed between the resistive functional film and the lower electrode. The invention utilizes rectification characteristic of the resistive functional film at a low resistance state to effectively inhibit the read crosstalk in a cross array structure, so as to facilitate integration of the memory and a peripheral circuit, and simplify preparation process of the device.
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Description

technical field

[0001] The invention relates to the technical field of memory in the microelectronics industry, in particular to a one-time programming memory and a preparation method thereof. Background technique

[0002] One-time programming memory is a very important non-volatile memory. Due to its simple structure and low power consumption, it is widely used in permanent data storage, code storage, calibration tables, setting parameters, etc. Once programmed, it generally does not need to be changed. field. One-time programming storage is divided into two categories: one is mask ROM; the other is PROM that users can program once. Mask ROM means that the data information to be stored has been solidified in the chip through different masks in the process of memory preparation, and the user can no longer change the stored information. PROM has greater flexibility than mask ROM, allowing users to program once by themselves. PROMs are generally implemented using a fuse or ...

Claims

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