One time programmable memory and preparation method thereof

A technology of memory and programming current, applied in read-only memory, static memory, information storage, etc., can solve the problems of misreading, affecting the commercial use of memory, serious problem of read crosstalk in one-time programming memory, etc., to reduce costs, suppress read crosstalk, Effects for easy integration

Inactive Publication Date: 2013-05-15
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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like image 3 As shown, for the four adjacent devices, if B1 is in a high-impedance state and the others are in a low-impedance state, when reading the resistance state of B1, the desired current path is as follows image 3 As shown in the solid line, but the actual current path is as image 3 As shown by the dotted line in the middle, the resistance value read out is no

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  • One time programmable memory and preparation method thereof
  • One time programmable memory and preparation method thereof
  • One time programmable memory and preparation method thereof

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[0032] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings. Although this article may provide an example of a parameter containing a specific value, it should be understood that the parameter need not be exactly equal to the corresponding value, but can be approximated to the value within acceptable error tolerances or design constraints.

[0033] In an exemplary embodiment of the present invention, a program-once memory is provided. Figure 4 It is a schematic diagram of a one-time programming memory according to an embodiment of the present invention. Such as Figure 4 As shown, the one-time programming memory of this embodiment includes: a lower electrode 101; an upper electrode 303; and a resistive function film 202 located between the upper electrode and the lower electrode; ...

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Abstract

The invention discloses a one time programmable memory and a preparation method thereof. The one time programmable memory provided by the invention comprises a lower electrode, a lower electrode and a resistive functional film formed between the upper electrode and the lower electrode. A Schottky barrier is formed between the upper electrode and the resistive functional film; and an ohmic contact is formed between the resistive functional film and the lower electrode. The invention utilizes rectification characteristic of the resistive functional film at a low resistance state to effectively inhibit the read crosstalk in a cross array structure, so as to facilitate integration of the memory and a peripheral circuit, and simplify preparation process of the device.

Description

technical field [0001] The invention relates to the technical field of memory in the microelectronics industry, in particular to a one-time programming memory and a preparation method thereof. Background technique [0002] One-time programming memory is a very important non-volatile memory. Due to its simple structure and low power consumption, it is widely used in permanent data storage, code storage, calibration tables, setting parameters, etc. Once programmed, it generally does not need to be changed. field. One-time programming storage is divided into two categories: one is mask ROM; the other is PROM that users can program once. Mask ROM means that the data information to be stored has been solidified in the chip through different masks in the process of memory preparation, and the user can no longer change the stored information. PROM has greater flexibility than mask ROM, allowing users to program once by themselves. PROMs are generally implemented using a fuse or ...

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Application Information

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IPC IPC(8): G11C17/10H01L27/10
Inventor 刘明张康玮龙世兵谢常青吕杭炳刘琦
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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