Self-rectifying resistive variable memory and its preparation method

A resistive variable memory and self-rectification technology, which is applied in the direction of semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of mismatching voltage values ​​and inability to realize CMOS process compatibility, etc., to reduce the thickness of the barrier layer, suppress read crosstalk, Effect of Low Operating Voltage

Active Publication Date: 2022-02-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Most of the currently reported self-rectifying resistive switching devices are not compatible with CMOS processes
A small number of self-rectifying devices that can be prepared under standard processes have operating voltages above 6V, which do not match the voltage value of 5V for memory matching logic devices.

Method used

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  • Self-rectifying resistive variable memory and its preparation method
  • Self-rectifying resistive variable memory and its preparation method
  • Self-rectifying resistive variable memory and its preparation method

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Embodiment Construction

[0038] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0039] Certain embodiments of the present disclosure will be described more fully hereinafter with reference to the accompanying drawings, in which some but not all embodiments are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth here; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.

[0040] In a first exemplary embodiment of the present disclosure, a self-rectifying resistive memory is provided. figure 1 It is a schematic structural diagram of a self-rectifying resistive variable memory according to the first embodiment of the present disclosure. S...

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Abstract

The present disclosure provides a self-rectifying resistive variable memory, comprising: a lower electrode; a resistive material layer formed on the lower electrode and used as a storage medium; a barrier layer formed on the resistive material layer, using semiconductor material or insulating material; and an upper electrode formed on the barrier layer, which realizes Schottky contact with the material of the barrier layer; wherein, the Schottky contact between the material of the upper electrode and the barrier layer is utilized The special base contact realizes the self-rectification of the self-rectification resistive variable memory, and does not require an additional gate transistor or diode as a gate unit; and because the device has self-rectification characteristics, it can suppress the read crosstalk in the cross array.

Description

technical field [0001] The present disclosure relates to the fields of microelectronics manufacturing and memory, in particular to a self-rectifying resistive variable memory and a preparation method thereof. Background technique [0002] Memory occupies an important position in the semiconductor market and can generally be divided into volatile memory and non-volatile memory. Volatile memory means that the information in the memory must be kept when the power is turned on, and the stored information will be lost when the power is not turned on; the main feature of the non-volatile memory is that it can be stored for a long time without power on Information. With the increasing popularity of portable electronic devices, non-volatile memory is becoming more and more important in embedded applications. Due to the explosive expansion of emerging markets such as the Internet of Things, artificial intelligence, smart cars, and virtual reality, high-density embedded memories are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/00H10N70/24H10N70/011
Inventor 罗庆吕杭炳刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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