Resistive memory device with rectification characteristics and its manufacturing method

A technology of resistive variable memory and resistive variable memory, which is applied in the direction of electrical components, etc., can solve the problem of not being able to provide a sufficiently large current resistive variable memory, and achieve the effects of suppressing the problem of read crosstalk, low manufacturing cost, and simple preparation process

Active Publication Date: 2016-01-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, the diodes and non-linear resistors currently used for the integration of RRAMs cannot provide a large enough current to make RRAMs realize the transition from a low-resistance state to a high-resistance state when the device area continues to shrink.

Method used

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  • Resistive memory device with rectification characteristics and its manufacturing method
  • Resistive memory device with rectification characteristics and its manufacturing method
  • Resistive memory device with rectification characteristics and its manufacturing method

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Embodiment Construction

[0023] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] The present invention provides a resistive random access memory device with self-rectifying characteristics and a manufacturing method thereof, such as image 3 As shown, the resistive random access memory device has rectification characteristics in a low resistance state, and includes: a lower electrode 100; an upper electrode 102; and a resistive memory layer 101 included between the lower electrode 100 and the upper electrode 102. Wherein, the lower electrode 100 adopts an n-type low-resistance silicon material, and the resistivity of the n-type low-resistance silicon material constituting the lower electrode 100 is less than 0.1Ω·cm. The upper electrode 102 is made of Cu, Ni or Ag material. The resistive sto...

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Abstract

The invention relates to the technical field of micro electronic techniques and memory devices, and discloses a resistive random access memory device with a rectification characteristic and a manufacturing method of the resistive random access memory device. The resistive random access memory device structurally comprises a lower electrode, an upper electrode and a resistive random access memory layer arranged between the lower electrode and the upper electrode. The resistive random access memory device is simple in structure and preparation technology and low in manufacturing cost, has the rectification characteristic in a low resistance state, and can effectively restrain the reading crosstalk problem.

Description

Technical field [0001] The invention relates to the technical fields of microelectronics technology and memory devices, and in particular to a resistive random access memory device with rectification characteristics and a manufacturing method thereof. Background technique [0002] Memory devices are mainly divided into two categories: volatile and non-volatile. The information stored in the volatile memory is lost immediately when the power is cut off, and it needs continuous power supply to maintain the stored information. Contrary to volatile memory, the data stored in non-volatile memory can still be maintained for a long time when there is no power supply. Therefore, the proportion of non-volatile memory in the memory market is increasing. Flash memory (FLASH) is the mainstream of non-volatile memory in the current memory market, but FLASH memory has disadvantages such as large operating voltage, slow operating speed, and insufficient durability during the continuous reducti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 刘明李颖弢龙世兵刘琦吕杭炳杨晓一孙鹏霄
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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