Flexible two-dimensional material light emitting device

A technology of light-emitting devices and two-dimensional materials, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high cost, difficult process, difficult mass production, etc., and achieve low production cost, easy mass production, and easy batch production. production effect

Inactive Publication Date: 2015-12-23
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the existing two-dimensional semiconductor materials are mainly expensive in terms of preparation technology, and the use of two-dimensional semiconductors to prepare heterostructures requires MoS 2 Doping in the middle, the process is complicated and difficult to realize, and it is difficult to achieve mass production

Method used

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  • Flexible two-dimensional material light emitting device

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Such as figure 1 As shown, a flexible two-dimensional material light-emitting device is used to emit red light with a wavelength of 500-700 nm. The light-emitting device includes a flexible substrate layer 1, a first metal layer, a dielectric layer 4, and a two-dimensional semiconductor material from bottom to top Layer 5, and the second metal layer disposed on the dielectric layer 4 and located at both ends of the two-dimensional semiconductor material layer 5, the flexible substrate layer 1 is made of polyethylene terephthalate, and the dielectric layer 4 is made of transparent Al 2 o 3 made, the thickness of the dielectric layer 4 is within 50nm, and the semiconducting material of the two-dimensional semiconductor material layer 5 is MoS 2 , the dielectric layer 4 is used as a gate, and the two ends of the second metal layer are respectively used as a source and a drain, thereby forming a MOS structure;

[0035] The left and right sides of the first metal layer are...

Embodiment 2

[0045] A flexible two-dimensional material light-emitting device for emitting red light with a wavelength of 500-700nm, the light-emitting device sequentially includes a flexible substrate layer, a first metal layer, a dielectric layer, a two-dimensional semiconductor material layer, and a The second metal layer on the dielectric layer and located at both ends of the two-dimensional semiconductor material layer, the flexible substrate layer is made of polyimide, the dielectric layer is made of ferroelectric dielectric, the thickness of the dielectric layer is 50nm, half of the two-dimensional semiconductor material layer conductive material is MoS 2 , the dielectric layer is used as the gate, and the two ends of the second metal layer are respectively used as the source and drain, thus forming a MOS structure;

[0046] The left and right sides of the first metal layer are respectively provided with a first metal electrode and a second metal electrode, the material of the first...

Embodiment 3

[0048] A flexible two-dimensional material light-emitting device for emitting red light with a wavelength of 500-700nm, the light-emitting device sequentially includes a flexible substrate layer, a first metal layer, a dielectric layer, a two-dimensional semiconductor material layer, and a The second metal layer on the dielectric layer and located at both ends of the two-dimensional semiconductor material layer, the flexible substrate layer is made of polyethylene naphthalate, and the dielectric layer is made of organic materials such as polytetravinylphenol, polyvinylpyrrolidone or polymethacrylic acid One of the methyl esters. The thickness of the dielectric layer is 10nm, and the semiconducting material of the two-dimensional semiconductor material layer is MoS 2 , the dielectric layer is used as the gate, and the two ends of the second metal layer are respectively used as the source and drain, thus forming a MOS structure;

[0049] The left and right sides of the first me...

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Abstract

The invention relates to a flexible two-dimensional material light emitting device. The flexible two-dimensional material light emitting device sequentially comprises a flexible substrate layer (1), a first metal layer, a medium layer (4), a two-dimensional semiconductor material layer (5) and a second metal layer which is arranged on the medium layer (4) and at two ends of the two-dimensional semiconductor material layer (5). Compared with the prior art, the flexible two-dimensional material light emitting device has advantages of good portability, fast photoelectric response speed, high integration density, good processing performance and low cost.

Description

technical field [0001] The invention relates to a flexible light-emitting device, in particular to a flexible two-dimensional material light-emitting device. Background technique [0002] Transition metal sulfide two-dimensional nanomaterials, such as MoS 2 、MoSe 2 、MoTe 2 、WS 2 It has become a new generation of high-performance nano-optoelectronic devices and is one of the core materials of international frontier research. Single-layer MoS 2 The electron mobility can reach 200cm at room temperature 2 / Vs, switching ratio up to 1×10 8 , when obtaining the same effect of electron movement, MoS 2 It is lighter and thinner than Si, and consumes 100,000 times less energy than Si transistors in a steady state. At the same time, MoS 2 With a direct bandgap, using MoS 2 The fabricated light-emitting device has excellent photoelectric properties. Furthermore, based on MoS 2 With its flexible characteristics, the device can be bent and stretched, thus giving birth to many ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/26H01L33/00
CPCH01L33/0037H01L33/0041H01L33/005H01L33/26
Inventor 汤乃云
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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