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A bendable and foldable heterogeneous flexible thermoelectric conversion device

A thermoelectric conversion device, a technology of bending and folding, which is applied in the direction of thermoelectric devices that only utilize the Peltier or Seebeck effect, and achieves the effects of high-density integration, simple overall structure, and good application prospects.

Active Publication Date: 2017-08-29
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there are few reports on the combination of graphene and two-dimensional semiconductor crystal materials for the preparation of flexible thermoelectric conversion devices.

Method used

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  • A bendable and foldable heterogeneous flexible thermoelectric conversion device

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Embodiment 1

[0031] Such as figure 1 As shown, a bendable and foldable heterogeneous flexible thermoelectric conversion device, the heterogeneous flexible thermoelectric conversion device includes a flexible substrate 1, a dielectric layer 2 sequentially grown on the flexible substrate 1 and a heterostructure, the heterostructure includes The graphene layer 3 and the two-dimensional semiconductor crystal layer 4 overlapped from bottom to top, the first metal electrode 5 is grown on one end of the graphene layer 3, the second metal electrode 6 is grown on one end of the two-dimensional semiconductor crystal layer 4, and the first metal electrode 5 and the second metal electrode 6 are isolated from each other; during operation, under the radiation of an external heat source, a temperature gradient is generated in the overlapping region of the graphene layer 3 and the two-dimensional semiconductor crystal layer 4, which causes the Seebeck effect and generates an open circuit voltage. and perf...

Embodiment 2

[0037] In the present embodiment, the material of the flexible substrate 1 is polyethylene naphthalate, the dielectric layer 2 is a silicon dioxide dielectric layer, and the thickness of the silicon dioxide dielectric layer is 80nm; the thickness of the graphene layer 3 is 15nm , and the thickness of the two-dimensional semiconductor crystal layer 4 is 50nm, and the material of the two-dimensional semiconductor crystal layer 4 is MoSe 2 .

[0038]During preparation, the graphene layer 3 is obtained through a standard mechanical exfoliation process, and then transferred to the silicon dioxide dielectric layer. The graphene in the graphene layer 3 is multi-layer graphene, and then the two-dimensional semiconductor crystal layer is prepared by mechanical exfoliation 4. Transfer to the graphene layer 3 by transfer technology, and finally, deposit a metal diaphragm on one end of the graphene layer 3 and one end of the two-dimensional semiconductor crystal layer 4 by electron beam e...

Embodiment 3

[0041] In this embodiment, the material of the flexible substrate 1 is polyimide, the dielectric layer 2 is a silicon dioxide dielectric layer, and the thickness of the silicon dioxide dielectric layer is 60nm; the thickness of the graphene layer 3 is 16nm, and the two-dimensional The thickness of the semiconductor crystal layer 4 is 32nm, and the material of the two-dimensional semiconductor crystal layer 4 is WS 2 .

[0042] During preparation, the graphene layer 3 is obtained through a standard mechanical exfoliation process, and then transferred to the silicon dioxide dielectric layer. The graphene in the graphene layer 3 is multi-layer graphene. Subsequently, a two-dimensional semiconductor is prepared by chemical liquid phase synthesis. The crystal layer 4 is transferred to the graphene layer 3 by transfer technology, and finally, a metal diaphragm is deposited on one end of the graphene layer 3 and one end of the two-dimensional semiconductor crystal layer 4 respectivel...

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Abstract

The invention relates to a bendable and foldable heterogeneous flexible thermoelectric conversion device. The heterogeneous flexible thermoelectric conversion device includes a flexible substrate, a dielectric layer and a heterostructure grown sequentially on the flexible substrate. The heterostructure includes: A graphene layer and a two-dimensional semiconductor crystal layer are overlapped upward. A first metal electrode is grown on one end of the graphene layer, and a second metal electrode is grown on one end of the two-dimensional semiconductor crystal layer. The first metal electrode and the second metal electrode are mutually interconnected. Isolation; during operation, under the radiation of external heat sources, the overlapping area of ​​the graphene layer and the two-dimensional semiconductor crystal layer generates a temperature gradient, causing the Seebeck effect, generating open circuit voltage, and performing thermoelectric conversion. Compared with the existing technology, the overall structure of the present invention is simple and compact, can be bent and folded, has ultra-high Seebeck coefficient and thermoelectric value, can be applied to wearable devices and other flexible electronic application fields, and has broad application prospects.

Description

technical field [0001] The invention belongs to the technical field of flexible electronics, and relates to a bendable and foldable heterogeneous flexible thermoelectric conversion device, in particular to a heterogeneous flexible thermoelectric conversion device of graphene, a two-dimensional semiconductor crystal material grown on a flexible substrate. Background technique [0002] Due to the growing miniaturization trend of portable electronic products, the research and development of miniaturized power supplies are promoted. As a self-sufficient energy source, the thermoelectric generator directly converts thermal energy into electrical energy through the Seebeck effect, becoming a high-tech in the energy field. On the other hand, due to the growing miniaturization trend of portable electronic products, the research and development of miniaturized power supplies has become a hot spot. [0003] Since the Seebeck coefficients of graphene and two-dimensional semiconductor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/32H10N10/17
Inventor 汤乃云
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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