Compound capable of being used for thermoelectric material and preparation method of compound
A technology of thermoelectric materials and compounds, applied in thermoelectric device node lead-out materials, chemical instruments and methods, polycrystalline material growth, etc., can solve the problems of expensive raw materials, low thermoelectric conversion efficiency, simple preparation process, etc., and achieve environmental friendliness , low cost and simple preparation process
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[0033] According to the second aspect of the present invention, a method for preparing a compound that can be used in thermoelectric materials is used to prepare the compound that can be used in thermoelectric materials in the first aspect, the compound is polycrystalline, including:
[0034] (1) Press Ln 2 ABQ 5 The chemical composition ratio selects the corresponding elemental substance or chalcogen compound as the raw material, weighs and mixes it under an inert atmosphere;
[0035] (2) Put the raw material into a sealed container such as a quartz glass tube that is isolated from water and oxygen, and then seal it after vacuuming; the sealed container such as a quartz glass tube after packaging is carried out at 500 ° C to 700 ° C for the first solid phase reaction, The reaction time is 12h-48h; after opening the closed container such as quartz glass tube, grinding and repackaging, the second solid phase reaction is carried out at 500°C-700°C, the reaction time is 48h-96h,...
Embodiment 1
[0048] La block, Cu powder, Sb powder and Se powder (mass percentage purity is respectively 99.9%, 99.99%, 99.99% and 99.999% the same below) in the glove box that is full of Ar gas according to La 2 CuSbSe 5 The stoichiometric ratio was weighed, mixed and vacuum-packed in a quartz glass tube, and then placed in a muffle furnace and slowly heated to 700°C for 24 hours. After the tube is opened, the powder is ground and repackaged, then placed in a muffle furnace and slowly raised to 700°C, reacted for 96 hours, and cooled with the furnace. The obtained pure phase powder is subjected to SPS sintering at a temperature of 500°C and 50Mpa, and finally a bulk thermoelectric material is made.
[0049] XRD diffraction patterns of bulk thermoelectric materials ( figure 2 ) indicates that a pure-phase polycrystalline sample was prepared by the above process. The material has good electrical conductivity, and the conductivity at room temperature is as high as 3.5S / cm ( image 3 ), ...
Embodiment 2
[0051] La block, Cu powder, Sb powder and Se powder were placed in a glove box filled with Ar gas according to La 2 CuSbSe 5 The stoichiometric ratio was weighed, mixed and vacuum-packed in a quartz glass tube, and then placed in a muffle furnace and slowly heated to 700°C for 24 hours. After the tube was opened, the powder was ground and repackaged, and then placed in a muffle furnace and slowly raised to 950°C for melting reaction. The reaction time was 12 hours, and then slowly lowered to room temperature. The obtained pure phase powder is subjected to SPS sintering at a temperature of 500°C and 50Mpa, and finally a bulk thermoelectric material is made.
[0052] The XRD diffraction pattern of the bulk thermoelectric material is similar to that of Example 1, indicating that a pure-phase polycrystalline sample is prepared by the above process. The electrical conductivity, Seebeck, thermal conductivity at room temperature, and thermoelectric figure of merit at room temperatu...
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Abstract
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