The invention provides a growth method of a
metal halide single crystal film, which comprises the following steps of: firstly, depositing a layer of blended
polymer film with an orthogonal
dissolution characteristic on the surface of a
metal halide single crystal substrate as a sacrificial layer, and performing
solvent treatment to form a self-patterning soft template; and then
coating the
polymer layer with a precursor solution of a target
epitaxy, carrying out
nucleation, transverse growth and grain combination to form a uniform and compact
single crystal thin film, and completing mechanical stripping and transfer of the
epitaxial thin film through a thermal stripping
adhesive tape. The growth method provided by the invention has excellent universality, can grow various
metal halide single
crystal films including lead-based, non-lead-based,
alloy and
superlattice structures, and has wide adjustability in size and thickness; in addition, the prepared thin film shows high carrier mobility and low
trap density which are equivalent to those of blocky single crystals.