Preparation method for embedded micro-nano channel

A nano-channel and nano-channel technology, which is applied in the field of preparing embedded micro-nano channels, can solve the problems of numerous instruments and complicated procedures, and achieve the effects of high-precision preparation features, high graphic resolution, and easy cycle control

Inactive Publication Date: 2013-01-16
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, there are other techniques for preparing micro-nanochannels. For example, Choonsup Lee, et. al et al. adopt chemical mechanical grinding and The method of thermal oxidation prepares nanochannels with a covering layer, but the method is complicated, with the participation of a sacrificial layer, and many instruments need to be used

Method used

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  • Preparation method for embedded micro-nano channel
  • Preparation method for embedded micro-nano channel
  • Preparation method for embedded micro-nano channel

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preparation example Construction

[0071] 1. Preparation of supporting sacrificial layer:

[0072] Design the shape, size, distribution, etc. of the required channels. According to the length of the required nanopore hole, width, height, shape, and distribution (can be a cross distribution) to design the required parameters of the nanostructure of the supporting sacrificial layer, the width and height of the nanostructure of the sacrificial layer are related to the size of the hole. Dimensions are related, and the exact relationship depends on the material and the parameters used to deposit the tungsten. The shape and distribution of the supporting sacrificial layer determine the shape and distribution of the nanochannels. The fabrication of the nanostructure of the supporting sacrificial layer can adopt the process of electron beam exposure-metal evaporation-dissolution to realize the metal nanostructure of the supporting sacrificial layer with specific position, characteristic size and specific distribution....

Embodiment 1

[0082] Formation of nanochannels in SiO based on ion beam assisted deposition of tungsten on nanowires 2 / Si substrate with metal nanowires as a supporting sacrificial layer to construct a three-dimensional nanochannel network. Specific steps are as follows:

[0083] 1. Preparation of metal nanowire network

[0084] Since the electron beam exposure process can produce nanowires of any shape, the metal nanowire network can be produced by the electron beam exposure-metal deposition-elution process, including the following steps, as shown in Figure 2: (1) In the clean SiO 2 A layer of electron beam photoresist (PMMA4955%, 4000 rotations) was coated on the / Si substrate by spin-coating process. (2) Electron beam exposure is used to expose the required nanowire network lines on the photoresist, and at the same time, a cross-shaped mark for calibration is exploded around the pattern, and the exposed pattern is transferred to the photoresist by developing and fixing superior. (3)...

Embodiment 2

[0099] Based on the formation of nanochannels when tungsten is assisted by ion beam deposition on nanowires, a three-dimensional nanochannel network is constructed on a Si substrate with multi-walled carbon nanotubes as a supporting sacrificial layer. Specific steps are as follows:

[0100] 1. Preparation and dispersion of multi-walled carbon nanotubes

[0101] Multi-walled carbon nanotubes can be prepared by various methods such as arc discharge method, laser ablation method, chemical vapor deposition method (hydrocarbon gas pyrolysis method), solid phase pyrolysis method, glow discharge method and gas combustion method, etc. and polymerization synthesis. Soak the prepared carbon nanotubes in alcohol to make them uniformly dispersed on the substrate by ultrasonic. 2. Formation of nanochannels.

[0102] 2. Preparation of micro-nano channels

[0103] (1) Sample placement and fixation: The Si substrate is fixed on the sample holder with a horizontal surface from the back of ...

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Abstract

The invention discloses a method for preparing an embedded micro-nano channel, and relates to micro-nano processing technology. The method comprises the steps of (1) cleaning a substrate; (2) preparing a support sacrificial layer with the cross sectional dimensions on nanoscale; (3) putting and fixing the processed sample by the step (2) in a device; (4) observing graphics to find the position of the nanostructure of the support sacrificial layer; and (5) depositing a tungsten covering layer on the support sacrificial layer through an ion beam-assisted deposition technology. The preparation method is based on a phenomenon of disappearance of the nanostructure of the support sacrificial layer to prepare the embedded micro-nano channel after the tungsten covering layer is deposited by aid of the ion beam, is flexible in process, has high efficiency and good controllability, and is a manufacturing method for the micro-nano channels with any shape inside a material body.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, and relates to a method for preparing an embedded micro-nano channel. Background technique [0002] With the development of micro-nano processing technology and the combination of micro-nano processing technology with other disciplines such as biology, chemistry, medicine, etc., the preparation of micro-nano channels has attracted more and more attention. Especially in the research of medicine, microfluidic system, electronic chip production, biological analysis and detection, many of them rely on micro-nano channels. For example, in the research of DNA, micro-nano channels play a very important role. People use micro-nano channels to manipulate DNA and separate and test DNA fragments. DNA sequencing of great significance can be carried out with the help of micro-nano channels. Microfluidic technology refers to the technology of controlling, manipulating and detecting complex flui...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 崔阿娟李无瑕顾长志李俊杰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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