The invention relates to a preparation method of an LED
photonic crystal. The method comprises the steps of splitting a triple-frequency
laser beam of Nd: YAG
laser, which is used as direct
etching laser and the
wavelength of which is gamma, into three coherent
laser beams, wherein every two coherent
laser beams form an identical angle theta, each coherent laser beam is identical in polarization direction, and converging the three coherent
laser beams onto a transparent
electrode film of an LED
chip; applying one or more pulses to the Nd: YAG laser, and finally forming the
photonic crystal with a given period T and given
porosity. By adopting the method, the
photonic crystal can be prepared on the surface of the
chip in one step, the process is simple, convenience and rapidness can be realized, and the steps such as masking and after-treatment are not needed; the prepared photonic
crystal is controllable in period, and the photonic
crystal with the period of 300nm to 300 micrometers can be obtained by changing the range of the angle theta; the
processing area is large, the
processing cost is low, and the method is applicable to batch and
mass production.