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A storage and gating dual-function device and its preparation method

A dual-function, device technology, applied in the direction of electrical components, etc., can solve the problem of low device density and other issues

Active Publication Date: 2020-05-15
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this solution needs to connect two kinds of components in series, and the device density is small

Method used

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  • A storage and gating dual-function device and its preparation method
  • A storage and gating dual-function device and its preparation method
  • A storage and gating dual-function device and its preparation method

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preparation example Construction

[0031] The present invention also provides a method for preparing the storage and gating dual-function device described in the above technical solution, comprising the following steps:

[0032] (1) Using argon as the working gas and niobium pentoxide target as the sputtering target, perform the first sputtering on the surface of the bottom electrode to obtain the semi-finished product of the storage and gating dual-function device;

[0033] (2) Using argon as the working gas and a tungsten target as the sputtering target, perform the second sputtering on the niobium oxide surface of the semi-finished storage and gating dual function device to obtain the storage and gating dual function device.

[0034] In the present invention, a tungsten target and a niobium pentoxide target are preferably installed on the magnetron sputtering equipment, and then after the vacuum chamber of the magnetron sputtering equipment is evacuated, argon gas is introduced to the pressure required for th...

Embodiment 1

[0051] (1) will have an area of ​​1μm 2 The surface of the base material of the TiN bottom electrode is rinsed with high-pressure air for subsequent use; the TiN bottom electrode is square and has a thickness of 200nm;

[0052] (2) Install a tungsten target and a niobium pentoxide target in the magnetron sputtering equipment, place the mold carrier substrate with the TiN bottom electrode obtained in step (1) in the magnetron sputtering equipment, and place the vacuum chamber After evacuating, argon is introduced until the system pressure is 4 Torr;

[0053] (3) Turn on the radio frequency measurement and control sputtering power supply, and at a temperature of 300K, with a power of 120W, sputter niobium pentoxide to the surface of the TiN bottom electrode for 400s, then turn off the radio frequency magnetron sputtering to obtain a semi-finished product;

[0054] (4) Turn on the DC magnetron sputtering power supply, and sputter tungsten on the surface of the semi-finished produc...

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Abstract

The invention provides a dual-function device for storing and gating, which includes a bottom electrode, a conversion layer and a top electrode from bottom to top, the bottom electrode is TiN or conductive glass, the conversion layer is niobium oxide, and the The top electrode is tungsten. The invention uses niobium oxide as the conversion layer, uses TiN or conductive glass as the bottom electrode, and metal tungsten as the top electrode to form a device with dual functions of storage and gating. Experimental results show that the device provided by the present invention has gating performance when there is a large current limit, and has resistive switching performance (i.e. storage performance) when small current limiting; Simultaneously in the gating and resistive switching performance test, cycle test 100 circles, The deviation degree of the obtained curve is very small, indicating that it also has excellent stability; in the resistance switching performance test, the resistance value of the high-resistance state is greater than 10 than the resistance value of the upper low-resistance state, indicating that the device also has a large Storage window.

Description

technical field [0001] The invention relates to the technical field of electronic materials and components, in particular to a storage and gating dual-function device and a preparation method thereof. Background technique [0002] Traditional charge-based memories, such as NAND flash memory, face physical and technical limitations of scalability, which has become a bottleneck for their development. Resistive Random Access Memory (RRAM) is considered as one of the candidates for the next generation of Non-Volatile Memory (NVM). RRAM has the advantages of simple device structure, excellent scalability, fast switching speed, potential 3D memory architecture, excellent data retention and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. To achieve high-density memory, RRAM is envisioned for 3D interleaved array memory cells, however, one of the main drawbacks of this structure is the problem of sneak paths through adjacent memory cells. This issue c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/841H10N70/883H10N70/011
Inventor 王浩何玉立陈傲马国坤陈钦
Owner HUBEI UNIV
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