Preparation method of defect-rich metal oxide (sulfide)/graphene oxide composite material

A composite material and defect-rich technology, applied in the field of preparation of defect-rich metal oxide/graphene oxide composite materials, can solve the problems of harsh production conditions, high production cost, unreported semiconductor materials and the like
CN110280232AInactive Publication Date: 2019-09-27NORTH CHINA ELECTRIC POWER UNIV (BAODING)
3 Cites 2 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
Publication Date
2019-09-27
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a preparation method of a defect-rich metal oxide (sulfide) / graphene oxide composite material. A metallic lithium sheet, a graphene oxide sol and a selected oxide or sulfide are uniformly stirred in a liquid phase, and the obtained mixture is washed and dried to obtain the composite material having a certain defect concentration. The stirring step of the method is carried out in an anoxic and anhydrous environment, and excess hydrochloric acid is added after a sufficient reaction in order to remove the remaining lithium sheet. The material prepared in the invention has a large number of surface defects, so photochemical and electrochemical reactions can be easily promoted; and compounding of metal oxide (sulfide) with the graphene oxide can greatly expand the light absorption range, increase the specific surface area and improve the conductivity, so the photochemical and electrochemical properties of the oxide (sulfide) material are improved. The method is carried out at room temperature, has the advantages of simplicity in operation, and low cost, and provides a new idea for the preparation of photocatalysts and energy storage materials.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of nanometer materials, in particular to a method for preparing a defect-rich metal oxide (sulfur) compound / graphene oxide composite material. Background technique

[0002] Environmental and energy issues have attracted worldwide attention, and it is imminent to seek the development of new clean energy and energy storage technologies. Semiconductor materials are widely used in it, especially many transition metal oxides and their sulfides, such as titanium dioxide (TiO 2 ), molybdenum sulfide (MoS 2 ), zinc oxide (ZnO) and molybdenum trioxide (MoO 3 ), etc., they are semiconductor materials that have been widely studied in recent years. They all have the characteristics of stable chemical properties, low price, abundant sources, and relatively simple preparation. They are excellent optoelectronic materials. However, the wide bandgap limits the carrier transport and separation capabilities of these materia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More