671results about How to "Inhibition decreased" patented technology

An object is to provide a semiconductor device having an antenna structure which is advantageous for miniaturization, without changing the number of steps and communication distance. One feature to achieve the above object is a semiconductor device including a substrate, a tag portion including a thin film element formed over the substrate, a first antenna, and a second antenna, in which the first antenna and the second antenna are formed in different layers separated by an insulating film, the first antenna and the second antenna are partially electrically connected to each other, the first antenna is formed of a same material and in a same layer as a source or drain wiring connected to the thin film element, and the second antenna is formed in a different layer from the source or drain wiring connected to the thin film element.

When detecting an abnormality in some storage batteries, the hybrid vehicle control system separates the faulty storage batteries and leads the sound storage batteries to a high SOC.

An antenna device comprising: a feeding radiation electrode and a non-feeding radiation electrode separately disposed on a surface of a dielectric substrate; a short circuit part of the feeding radiation electrode and a short circuit part of the non-feeding radiation electrode adjacently disposed to each other on one side surface of the dielectric substrate; and an open end of the feeding radiation electrode and an open end of the non-feeding radiation electrode disposed on mutually different surface sides of the dielectric substrate other than the surface on which said short circuit parts are disposed.

It is an object of the present invention to provide a biosensor, which is not significantly affected by the baseline fluctuation and suppresses nonspecific adsorption. The present invention provides a biosensor, which comprises a metal surface or metal film coated with a hydrophobic polymer, and has two or more types of different surfaces in a region coated with a hydrophobic polymer.

An input pattern feature amount is decomposed into element vectors. For each of the feature vectors, a discriminant matrix obtained by discriminant analysis is prepared in advance. Each of the feature vectors is projected into a discriminant space defined by the discriminant matrix and the dimensions are compressed. According to the feature vector obtained, projection is performed again by the discriminant matrix to calculate the feature vector, thereby suppressing reduction of the feature amount effective for the discrimination and performing effective feature extraction.

A stacked semiconductor device includes an interposer substrate having external power supply terminals, and semiconductor chips stacked on the interposer substrate. A power supply wiring arranged in the semiconductor chip located in the bottom layer is connected to the external power supply terminal via a bump electrode, the power supply wiring arranged in the semiconductor chip located in the top layer is connected to the external power supply terminal via a bonding wire, and the power supply wirings each arranged in adjacent semiconductor chips are mutually connected via the through electrode. Such a loop structure can solve a problem such that the higher the semiconductor chip, the larger its voltage drop.

In a semiconductor device, an internally-generated power supply voltage VPP is monitored. If the internally-generated power supply voltage VPP is lower than a lower limit voltage, serial refresh is selected as a double refresh operation mode. In the serial refresh, double refresh for a pair address is inserted in a next refresh cycle. By the serial refresh, decrease of the internally-generated power supply voltage VPP is suppressed.

A steel cord having a strand construction formed by twisting a plurality of sheath strands each formed by twisting plural filaments around a core strand formed by twisting plural filaments is provided. At least one of the core strand and the sheath strands has a construction of twisting one or more sheath layers each made of plural filaments around a core made of one or plural filaments, and a diameter of a filament constituting an outermost sheath layer is made larger than that of a filament constituting at least one layer located inside thereof, whereby precedent breakage in a part of the filaments is avoided to improve the durability of the steel cord.

A thermoelectric generator has a high temperature heat source part provided on a first passage through which a first fluid for cooling an engine flows, a low temperature heat source part provided on a second passage through which a second fluid having a temperature lower than that of the first fluid flows, and a thermoelectric element for producing electric power by a temperature difference produced between the high temperature heat source part and the low temperature heat source part. The first passage is included in a first circuit in which the engine and a first radiator for cooling the first fluid are connected in loop through a main passage. Further, the first passage is in parallel to the first radiator in the first circuit. The second passage is included in a second circuit that is separate from the first circuit and includes a second radiator for cooling the second fluid.

A spiral reverse osmosis membrane element of the present invention includes a plurality of bag-shaped reverse osmosis membranes, permeated liquid passage members arranged inside the reverse osmosis membranes, and a plurality of feed liquid passage members interposed between the reverse osmosis membranes, those membranes and passage members being wound around an outer surface of a hollow pipe in a manner that only the interiors of the reverse osmosis membranes communicate with through-holes formed in the surface of the hollow pipe. Each of the feed liquid passage members is a mesh member having series of quadrilateral meshes formed by a plurality of linear members crossing each other. Two opposite cross-points out of four cross-points of each of the quadrilateral meshes are in line in parallel with an axial direction of the hollow pipe. And relations 2 mm<=X<=5 mm and X<=Y<=1.8X are both satisfied where X denotes a distance between the cross-points in a direction perpendicular to the axial direction of the hollow pipe and Y denotes a distance between the cross-points in the axial direction of the hollow pipe.

An all-solid lithium secondary battery 20 includes a solid electrolyte layer 10 composed of a garnet-type oxide, a positive electrode 12 formed on one surface of the solid electrolyte layer 10 and a negative electrode 14 formed on the other surface of the solid electrolyte layer 10. This all-solid lithium secondary battery 20 includes an integrally sintered complex of the solid electrolyte layer 10 and the positive electrode active material layer 12a. This complex is obtained by integrally sintering a stacked structure of an active material layer and a solid electrolyte layer. The solid electrolyte layer includes: abase material mainly including a fundamental composition of Li7+X−Y(La3−x,Ax) (Zr2−Y,TY)O12, wherein A is one or more of Sr and Ca, T is one or more of Nb and Ta, and 0≦X≦1.0 and 0≦Y<0.75 are satisfied, as a main component; and an additive component including lithium borate and aluminum oxide.

The present invention provides a display device including a pixel array section, the pixel array section having pixels arranged in a matrix form, each of the pixels including: an electro-optical element; a write transistor; a holding capacitance; a drive transistor; and a switching transistor; a write scan line disposed for each of pixel rows of the pixel array section and adapted to convey a write signal to be applied to the gate electrode of the write transistor; and a correction scan line, wherein the wiring structure of the write scan line does not intersect with the wiring pattern connected to the gate electrode of the drive transistor.

An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10−2 / cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.

The invention discloses a preparation method of a rare-earth-based composite multi-component denitrification and dioxin removal catalyst. According to the preparation method, titanium dioxide (titanium white) and silicon powder as carriers and ammonium metatungstate, ammonium metavanadate, cerous nitrate and lanthanum nitrate as active components, the steps of mixing, kneading, molding, drying and roasting are carried out in the presence of auxiliary materials to prepare the catalyst, wherein the auxiliary materials include monoethanolamine, citric acid, ammonium hydroxide, lactic acid, stearic acid, glass fibers, macromolecular polymer fibers RP-CHOP, hydroxypropyl methyl cellulose, polyoxyethylene and water. The prepared catalyst can simultaneously decompose nitric oxides and dioxin and can improve the mercury removal efficiency of the existing smoke control device. The prepared catalyst is not only applicable to new power plants, but also suitable for the modification of a wet-method desulphurization device of an old power plant, 80 to 95 percent of HgO generated in a coal burning power plant can be oxidized to Hg<2+> by utilizing the prepared catalyst, and a majority of particle-state Hg<2+> can be removed by utilizing a dust removal device.

A power supply control apparatus for controlling an electric generator of a vehicle limits the rate of change of a power supply voltage to a predetermined variation rate range, when the change is caused by operations to control the charge condition of the vehicle battery, and controls the generated power to match the drive torque applied by the engine to the generator. When the electrical load demand changes, the generated power is controlled to limit a resultant momentary change in the power supply voltage caused by an engine response delay, while minimizing a resultant momentary amount of engine speed variation.

A magnetic recording medium having a non-magnetic substrate, a non-magnetic undercoat layer, a plurality of magnetic layers, and a protective film, is disclosed. At least one non-magnetic coupling layer is provided above the non-magnetic undercoat layer, a first magnetic layer is provided beneath the non-magnetic coupling layer and a second magnetic layer is provided atop the non-magnetic coupling layer, and the first magnetic layer is formed of a CoRu-based alloy, a CoRe-based alloy, a CoIr-based alloy, or a CoOs-based alloy.

On the surface of a silicon nitride film, there is formed a thermal oxide film, over which a CVD oxide film is then formed to provide a silicon oxide film of two-layered structure films. Moreover, the total thickness of the two-layered structure films is set to a value from 5 nm to 30 nm. Thus, the silicon oxide film is made into the two-layered structure films of the thermal oxide film and the CVD oxide film to thereby achieve the thickness of the silicon oxide film. As a result, it is possible to prevent a Vth from being lowered by a charge trap phenomenon and to prevent the Vth from fluctuating due to the enlargement of the bird's beak length by the silicon oxide film.

A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

An image-capturing apparatus includes an image-capturing optical system; a sensor unit having line sensors that receive light fluxes of an object, which have been transmitted through a pair of partial areas in an exit pupil of the image-capturing optical system; image-capturing elements having a pixel arrangement capable of generating an image signal and a focus detection pixel sequence, in which two or more pairs of pixels that receive the light fluxes of an object, are arranged in a predetermined direction; a continuous image-capturing unit configured to perform continuous image capturing of actually exposing the image-capturing elements; a signal generation unit configured to perform another exposure for the sensor unit; a first focus detection unit configured to perform focus detection of a phase-difference detection method; a second focus detection unit configured to perform focus detection; and a focus adjustment unit configured to perform focus adjustment.