Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device

a technology of nitride-based semiconductors and light-emitting devices, which is applied in the direction of semiconductor devices, semiconductor lasers, semiconductor lasers, etc., can solve the problems of large number of cracks formed on n-type algan layers, large number of cracks formed, and large number of disadvantageous cracks, so as to achieve the effect of reducing the luminous efficiency, and improving the luminous efficiency
US20070221932A1Inactive Publication Date: 2007-09-27SANYO ELECTRIC CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
SANYO ELECTRIC CO LTD
Publication Date
2007-09-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.
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Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a method of fabricating a nitride-based semiconductor light-emitting device and a nitride-based semiconductor light-emitting device, and more particularly, it relates to a method of fabricating a nitride-based semiconductor light-emitting device having a nitride-based semiconductor layer formed on a nitride-based semiconductor substrate and a nitride-based semiconductor light-emitting device.

[0003] 2. Description of the Background Art

[0004] A nitride-based semiconductor light-emitting device such as a nitride-based semiconductor laser diode having a nitride-based semiconductor layer formed on a GaN substrate employed as a nitride-based semiconductor substrate is known in general, as disclosed in Japanese Patent Laying-Open No. 2000-58972, for example.

[0005] The aforementioned Japanese Patent Laying-Open No. 2000-58972 discloses a nitride-based semiconductor laser diode formed by successivel...

Claims

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