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Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device

a technology of nitride-based semiconductors and light-emitting devices, which is applied in the direction of semiconductor devices, semiconductor lasers, semiconductor lasers, etc., can solve the problems of large number of cracks formed on n-type algan layers, large number of cracks formed, and large number of disadvantageous cracks, so as to achieve the effect of reducing the luminous efficiency, and improving the luminous efficiency

Inactive Publication Date: 2007-09-27
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008]The present invention has been proposed in order to solve the aforementioned problem, and an object of the present invention is to provide a method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield.
[0009]Another object of the present invention is to provide a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield.

Problems solved by technology

In the conventional nitride-based semiconductor laser diode disclosed in the aforementioned Japanese Patent Laying-Open No. 2000-58972, however, the quantity of cracks formed on the n-type AlGaN layers is disadvantageously increased when the n-type AlGaN layers constituting the n-type cladding layer are grown on the n-type GaN substrate having the planar surface.
When the quantity of cracks formed on the n-type AlGaN layers (n-type nitride-based semiconductor layer) is increased in the nitride-based semiconductor laser diode disclosed in the aforementioned Japanese Patent Laying-Open No. 2000-58972, a large number of cracks are disadvantageously formed also on the light-emitting layer and the p-type nitride-based semiconductor layer successively formed on the n-type nitride-based semiconductor layer.
In the nitride-based semiconductor laser diode disclosed in the aforementioned Japanese Patent Laying-Open No. 2000-58972, therefore, a large number of cracks formed on a nitride-based semiconductor device layer including the n-type nitride-based semiconductor layer, the light-emitting layer and the p-type nitride-based semiconductor layer disadvantageously increase a leakage current not supplied to a light-emitting portion of the nitride-based semiconductor device layer and hinder a transmission of a light.
Consequently, the characteristics and the yield of the nitride-based semiconductor laser diode are disadvantageously reduced in the nitride-based semiconductor laser diode disclosed in the aforementioned Japanese Patent Laying-Open No. 2000-58972.

Method used

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  • Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device

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first embodiment

[0071]A method of fabricating a nitride-based semiconductor laser diode according to a first embodiment of the present invention is described with reference to FIGS. 1 to 12 and 34.

[0072]In the method of fabricating a nitride-based semiconductor laser diode according to the first embodiment, an n-type GaN substrate 1 having a surface of the (0001) plane with a low dislocation density is prepared, as shown in FIGS. 1 and 2. This n-type GaN substrate 1 has a lattice constant of about 0.3189 nm (a-axis direction). The n-type GaN substrate 1 is an example of the “nitride-based semiconductor substrate” in the present invention. Then, striped (slender) mask layers 17 of Ni each having a thickness of about 0.4 μm are formed on prescribed regions of the n-type GaN substrate 1 by electron beam evaporation or the like. More specifically, the mask layers 17 are so formed as to extend in the [1-100] direction. Further, the distance W1 between the mask layers 17 adjacent to each other along the ...

second embodiment

[0091]Referring to FIGS. 13 to 15 and 34, striped (slender) groove portions 21a extending in the [11-20] direction are formed on an n-type GaN substrate 21 in a method of fabricating a nitride-based semiconductor laser diode according to a second embodiment of the present invention, dissimilarly to the aforementioned first embodiment.

[0092]In the method of fabricating a nitride-based semiconductor laser diode according to the second embodiment, the striped (slender) groove portions 21a each having a width W11 of about 50 μm and a depth of about 2 μm with side surfaces perpendicular to the upper surface of the n-type GaN substrate 21 are formed on the n-type GaN substrate 21 through steps similar to those in the first embodiment shown in FIGS. 1 to 4, as shown in FIG. 13. According to the second embodiment, however, the groove portions 21a are so formed as to extend in the [11-20] direction. The distance W12 between the groove portions 21a adjacent to each other along the [1-100] dir...

third embodiment

[0103]Referring to FIGS. 16 and 34, striped (slender) groove portions 41a and 41b extending in the [1-100] direction and the [11-20] direction respectively are latticed on an n-type GaN substrate 41 in a method of fabricating a nitride-based semiconductor laser diode according to a third embodiment of the present invention, dissimilarly to the aforementioned first and second embodiments.

[0104]In the method of fabricating a nitride-based semiconductor laser diode according to the third embodiment, the striped (slender) groove portions 41a and 41b each having a width W21 of about 50 μm and a depth of about 2 μm with side surfaces perpendicular to the upper surface of the n-type GaN substrate 41 are formed on the n-type GaN substrate 41 through steps similar to those of the first embodiment shown in FIGS. 1 to 4, as shown in FIG. 16. According to the third embodiment, however, the groove portions 41a and 41b are so latticed as to extend in the [1-100] direction and the [11-20] directio...

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Abstract

A method of fabricating a nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield is obtained. This method of fabricating a nitride-based semiconductor light-emitting device comprises steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a method of fabricating a nitride-based semiconductor light-emitting device and a nitride-based semiconductor light-emitting device, and more particularly, it relates to a method of fabricating a nitride-based semiconductor light-emitting device having a nitride-based semiconductor layer formed on a nitride-based semiconductor substrate and a nitride-based semiconductor light-emitting device.[0003]2. Description of the Background Art[0004]A nitride-based semiconductor light-emitting device such as a nitride-based semiconductor laser diode having a nitride-based semiconductor layer formed on a GaN substrate employed as a nitride-based semiconductor substrate is known in general, as disclosed in Japanese Patent Laying-Open No. 2000-58972, for example.[0005]The aforementioned Japanese Patent Laying-Open No. 2000-58972 discloses a nitride-based semiconductor laser diode formed by successivel...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCB82Y20/00H01L33/0075H01S5/0202H01S5/0207H01S2304/12H01S5/3063H01S5/34333H01S2304/04H01S5/0425H01S5/04252H01S5/2201H01S5/04254H01S2301/176
Inventor KANO, TAKASHIHATA, MASAYUKINOMURA, YASUHIKO
Owner SANYO ELECTRIC CO LTD
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