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Copper-selenium based high performance thermoelectric material and preparation method of the same

A thermoelectric material and high-performance technology, applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve problems such as thermoelectric performance degradation

Active Publication Date: 2016-10-05
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Doping with a small amount of I element can reduce the phase transition temperature to about 360K, but the thermoelectric performance is also reduced

Method used

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  • Copper-selenium based high performance thermoelectric material and preparation method of the same
  • Copper-selenium based high performance thermoelectric material and preparation method of the same
  • Copper-selenium based high performance thermoelectric material and preparation method of the same

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preparation example Construction

[0026] The preparation process of the present invention is realized through vacuum packaging, melting, slow cooling and annealing processes, figure 2 A process flow diagram for the preparation of this material is shown.

[0027]1) The preparation method of the present invention uses pure elemental elements as initial raw materials, which are elemental copper, elemental Se and elemental sulfur respectively. The starting material is weighed in a stoichiometric ratio 2:1-x:x and sealed in a quartz tube;

[0028] Vacuum packaging is carried out in an argon atmosphere glove box, using plasma or flame gun packaging, the quartz tube is evacuated during packaging, and the internal pressure is 1-10000Pa;

[0029] 2) The melting process is carried out in a vertical melting furnace. Melt treatment at 1100-1150°C for 12-24 hours, preferably at a heating rate of 10°C / h to 1150°C, and melt at constant temperature for 12 hours;

[0030] 3) Annealing at 600-800°C for 5-8 days, preferably ...

Embodiment 1

[0036] Cu 2 Se 0.94 S 0.06 (x=0.06) thermoelectric properties

[0037] The elemental raw materials Cu, Se and S were weighed at a molar ratio of 2:0.94:0.06, and then packaged in a quartz tube. Raise the temperature to 1150°C at a heating rate of 10°C / h, melt the raw material at 1150°C for 12 hours, then cool down to 800°C at a rate of 12°C / h, anneal at this temperature for 6 days, and cool to room temperature with the furnace. The annealed product is ground into powder and subjected to spark plasma sintering at a sintering temperature of 450-600°C, a pressure of 65MPa, and a sintering time of 5-10 minutes to obtain a dense bulk material. Thermoelectric performance measurements show that in the measured temperature range (300-1000K), the material has a high Seebeck coefficient and moderate electrical conductivity, and this material has a very low thermal conductivity (in the temperature range of 300-1000K, its Value- 1 K -1 ). Calculated according to the performance mea...

Embodiment 2

[0039] Cu 2 Se 0.92 S 0.08 (x=0.08) thermoelectric properties

[0040] The elemental raw materials Cu, Se and S were weighed according to the molar ratio of 2:0.92:0.08, and then packaged in a quartz tube. Raise the temperature to 1150°C at a heating rate of 10°C / h, melt the raw material at 1150°C for 12 hours, then cool down to 800°C at a rate of 12°C / h, anneal at this temperature for 6 days, and cool to room temperature with the furnace. The annealed product is ground into powder and subjected to spark plasma sintering at a sintering temperature of 450-600°C, a pressure of 65MPa, and a sintering time of 5-10 minutes to obtain a dense bulk material. Thermoelectric performance measurements show that the Seebeck coefficient of the sample with this composition is slightly higher than that of Cu 2 Se 0.94 S 0.06 , while the electrical conductivity is slightly lower, and the thermal conductivity of samples of this composition is lower than that of Cu in the corresponding tem...

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Abstract

The invention relates to copper-selenium based high performance thermoelectric material and a preparation method of the same. The composition chemical formula of the copper-selenium based high performance thermoelectric material is Cu2Se1-xSX, wherein 0<x<=0.16. The copper-selenium based high performance thermoelectric material can restrain precipitation of copper to some extent so as to reduce the carrier concentration of a system.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and relates to a copper-selenide-based thermoelectric material and a preparation method thereof, more specifically, relates to a chemical composition of Cu 2 Se 1-x S X (x=0-0.16) Composition of the compound and its preparation method. Background technique [0002] Thermoelectric conversion materials can realize mutual conversion between thermal energy and electric energy by using their Seebeck effect and Peltier effect. It is a new type of clean energy. Noisy, gearless, high reliability chiller. However, due to the low conversion efficiency of thermoelectric materials (usually <10%), large-scale commercial use has not yet been realized. Therefore, how to improve the thermoelectric performance of thermoelectric materials is a valuable research topic. The energy conversion efficiency of thermoelectric materials is determined by the high and low end temperatures of the material and t...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
Inventor 史迅赵琨鹏陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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