A kind of preparation method of nanobowl-shaped phase-change memory unit

Abstract

The invention relates to a method for preparing a nano structure material for a novel semiconductor memory, in particular relates to a method for preparing a nano bowl-shaped phase change memory unit, and aims to prepare a nano bowl array and a nano bowl-shaped top electrode made of a phase change material such as GeSbTe or GeTe by taking a nano colloidal sphere array in a two-dimensional order. By adopting the hollow nano bowl-shaped phase change memory unit, the loss of heat from the electrode in the amorphous to polycrystal conversion process of the phase change material is reduced, the contact area of the phase change material with a lower electrode is reduced, the current density is improved, and the operation current of a device is reduced.

Description

technical field

[0001] The invention relates to a preparation method of a nanostructure material applicable to novel semiconductor storage, in particular to a preparation method of a nanobowl-shaped phase-change memory unit. Background technique

[0002] Phase change random access memory (PCM) uses the resistance of the crystalline and amorphous states of chalcogenide compounds (such as GeSbTe or GeTe, etc.) to realize data storage. Phase change memory has the advantages of non-volatility, long cycle life, small device size, high speed, radiation resistance, and multi-level storage.

[0003] Phase change memory is composed of many phase change memory cells. Each phase-change memory cell includes three basic parts: top electrode, phase-change medium, and bottom electrode. The current phase-change memory cell preparation is realized by traditional photolithography technology, so each phase-change memory cell is made of planar composed of thin film structures. To further inc...

Images