Method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on magnetic material/GeSbTe/substrate heterostructure

A technology of magnetic materials and heterostructures, applied in the field of composite memory, can solve the problem that the memory cannot meet the needs of future development.

Inactive Publication Date: 2018-08-21
BEIJING UNIV OF TECH
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  • Claims
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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the current single memory cannot meet the needs of future development, and to provide a method for realizing magneto-optical coupling co...

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  • Method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on magnetic material/GeSbTe/substrate heterostructure
  • Method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on magnetic material/GeSbTe/substrate heterostructure
  • Method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on magnetic material/GeSbTe/substrate heterostructure

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Embodiment 1

[0033] Step 1: Using a magnetron sputtering coater, along the [001] crystal direction of single crystal silicon, under an argon pressure of 3mTorr, control the deposition rate and deposition time, and first coat a layer of 50nm on a 6-inch silicon wafer substrate. thick amorphous Ge 2 Sb 2 Te 5 thin film, and then coated with a layer of 50nm thick amorphous FeCoB thin film;

[0034] Step 2, use a diamond tool to cut the coated silicon wafer into small pieces of 10mm×10mm for subsequent performance testing, and then clean the sample with ultrasonic waves;

[0035] Step 3, use 248nm excimer laser to induce Ge 2 Sb 2 Te 5The film undergoes phase change, the laser pulse width is 30ns, and the single pulse output is performed. The laser energy is between 90mJ and 225mJ, and the focused spot size is 4.5cm. 2 , The sample is glued on the developing paper with optical glue, fixed on the translation stage, and the prepared "FeCoB / GeSbTe / Si" heterostructure is irradiated. The surf...

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Abstract

The invention provides a method for achieving magneto-optical coupling composite storage by using ultraviolet laser to act on a magnetic material/GeSbTe/substrate heterostructure, and belongs to the technical field of composite storage devices. The magnetic material/GeSbTe/substrate heterostructure is prepared by using a magnetron sputtering coating instrument, then the heterostructure is irradiated by the ultraviolet laser with a short wavelength, the input energy of the laser is controlled to make a GeSbTe thin film undergo phase transition (crystallization or amorphization) and a magnetic material thin film not undergo phase transition, the volume effect, produced due to the phase transition, of the GeSbTe thin film induces the magnetic domain of the magnetic material thin film to produce deflection which can be effectively controlled, meanwhile, the phase transition and the magnetic domain deflection are reversible, therefore, the laser can act on and control the GeSbTe thin film and the magnetic material thin film at the same time, and the coupling composite storage of magnetic storage and phase-transition optical storage is expected to be achieved.

Description

technical field [0001] The invention belongs to the technical field of composite memory, and relates to the preparation of a "magnetic material / GeSbTe / substrate" heterostructure for magneto-optical coupling composite storage and the phase transition of a "magnetic material / GeSbTe / substrate" heterostructure induced by a short-wavelength ultraviolet laser technology, and can realize real-time regulation of laser input energy. Specifically, it is a method in which ultraviolet laser acts on the "magnetic material / GeSbTe / substrate" heterostructure, which is expected to realize magneto-optical coupling composite storage. Background technique [0002] With the huge increase in the amount of stored information generated in the world, the demand for memory with high storage capacity is becoming more and more intense and urgent. [0003] At present, the main memory includes magnetic memory, semiconductor memory and phase change optical memory. Magnetic memory can increase a certain ...

Claims

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Application Information

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IPC IPC(8): H01L43/12
CPCH10N50/01
Inventor 刘富荣黄引樊婷张永志李文强韩子豪韩钊
Owner BEIJING UNIV OF TECH
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