Sulphurs phase-change material chemically machinery polished non-abrasive polishing liquid and its use

A non-abrasive polishing liquid, chemical mechanical technology, applied in the direction of polishing composition, chemical instruments and methods, can solve the problems of Ge-Sb-Te thin film material CMP work that has not been reported in the literature, and achieve the effect required by high finish
CN100335581CActive Publication Date: 2007-09-05SHANGHAI XINANNA ELECTRONICS TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI XINANNA ELECTRONICS TECH
Publication Date
2007-09-05

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Abstract

The invention relates to a polishing fluid without abrasive for chemical mechanical polishing(CMP)of sulphur system compound phase-changing film material GeSbTe and its application in preparation of electric applicance phase-changing memorizer. The CMP polishing fluid without abrasive is comprised of oxidant, sequestrant, pH regulator resist, surface active agent, defoamer and bactericide and solvent,it has less hurt,convenient cleaning,no corrosion to equipment and no pollution to the environment,mainly applied in preparation of CMP of the key material (GexSbyTe)for phase-chaning memorizer. Using the method above to clear away too much phase-changing film material (GexSbyTe)(x and y are not 0 at the same time )for preparation of phase-changing memorizer of electric appliance is simple and convenient.
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Description

technical field

[0001] The invention relates to a non-abrasive polishing liquid for chemical mechanical polishing (CMP) and the application of the polishing liquid to chemical mechanical polishing of chalcogenide compounds in the process of preparing nanoelectronic device phase-change memory. More precisely, it is a chalcogenide phase-change thin film material Ge x Sb y Te (1-x-y) The application of abrasive-free polishing liquid for chemical mechanical polishing and phase change memory in the preparation process belongs to the technical field of microelectronic auxiliary materials and processing technology. Background technique

[0002] Chalcogenide-Random Access Memory (C-RAM) is based on S.R.Ovshinsky in the late 1960s (Phys.Rev.Lett., 21, 1450-1453, 1968) and early 1970s (Appl.Phys . Lett., 18, 254-257, 1971) developed on the basis of the idea that the chalcogenide thin film can be applied to phase-change storage media. In 2001, Intel reported 4MB C-RAM for the first...

Claims

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