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Sulphurs phase-change material chemically machinery polished non-abrasive polishing liquid and its use

A non-abrasive polishing liquid, chemical mechanical technology, applied in the direction of polishing composition, chemical instruments and methods, can solve the problems of Ge-Sb-Te thin film material CMP work that has not been reported in the literature, and achieve the effect required by high finish

Active Publication Date: 2007-09-05
SHANGHAI XINANNA ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After reviewing domestic and foreign patents and literature, there is no literature report on the CMP work of Ge-Sb-Te thin film materials

Method used

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  • Sulphurs phase-change material chemically machinery polished non-abrasive polishing liquid and its use
  • Sulphurs phase-change material chemically machinery polished non-abrasive polishing liquid and its use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Preparation of abrasive-free polishing fluid A: the polishing fluid contains 6.0wt% hydrogen peroxide; 0.3wt% ammonium hydroxyethyl ethylenediamine tetraacetate; 0.3wt benzotriazole; dodecyl alcohol polyoxyethylene ether 0.2wt%; 1.0wt% ammonium chloride, 50ppm polydimethylsilane, 10ppm isomeric thiazolinone, tetramethylammonium hydroxide is the pH regulator, the pH value is 10.8, and the rest is deionized water.

Embodiment 2

[0044] Preparation of abrasive-free polishing liquid B: the polishing liquid contains 10.0 wt% of urea hydrogen peroxide; 0.5 wt% of ammonium ethylenediamine tetraacetate; 0.1 wt% of 1,2,4-triazole; Ammonium bromide 0.1wt%, lauryl alcohol polyoxyethylene ether 0.1wt%; ammonium chloride 1.5wt%, polydimethylsilane 50ppm, isomeric thiazolinone 10ppm, hydroxylamine as pH regulator, pH value 9.8, the rest is deionized water.

[0045] implement

example

Polishing fluid

serial number

oxidizing agent

Chelating agent

Surfactant

Accelerator

Resist

pH

Regulator

3

C

h 2 o 2

3.0wt%

Ammonium EDTA

2.0wt%

Hexadecyltrimethyl bromide

Ammonium 0.2wt%

ammonium chloride

0.5wt%

Benzotriazole

0.1wt%;

Ammonia, Hydroxy

Amine, pH9.2

4

D

h 2 o 2...

Embodiment 8

[0049] CMP test: CP-4 polishing machine from CETR Company of the United States is used, the polishing pad is IC1000 / SubaIV, the polishing machine chassis speed is 50rpm, the polishing head speed is 47rpm, the polishing liquid flow rate is 200ml / min, and the pressure is 2psi. Composition provided by 7 embodiments, the polishing pad sample is Si / SiO 2 / Ge 2 Sb 2 Te 5 . The RMS roughness of the polished surface was measured by an atomic force microscope (AFM), and the results are shown in Table 2. It can be seen from the table that after the Ge-Sb-Te compound is CMPed by the abrasive-free polishing solution provided by the present invention, the surface roughness RMS has been reduced to below 1.0 nm, which meets the requirements of high-performance C-RAM.

[0050]

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PUM

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Abstract

The invention relates to a polishing fluid without abrasive for chemical mechanical polishing(CMP)of sulphur system compound phase-changing film material GeSbTe and its application in preparation of electric applicance phase-changing memorizer. The CMP polishing fluid without abrasive is comprised of oxidant, sequestrant, pH regulator resist, surface active agent, defoamer and bactericide and solvent,it has less hurt,convenient cleaning,no corrosion to equipment and no pollution to the environment,mainly applied in preparation of CMP of the key material (GexSbyTe)for phase-chaning memorizer. Using the method above to clear away too much phase-changing film material (GexSbyTe)(x and y are not 0 at the same time )for preparation of phase-changing memorizer of electric appliance is simple and convenient.

Description

technical field [0001] The invention relates to a non-abrasive polishing liquid for chemical mechanical polishing (CMP) and the application of the polishing liquid to chemical mechanical polishing of chalcogenide compounds in the process of preparing nanoelectronic device phase-change memory. More precisely, it is a chalcogenide phase-change thin film material Ge x Sb y Te (1-x-y) The application of abrasive-free polishing liquid for chemical mechanical polishing and phase change memory in the preparation process belongs to the technical field of microelectronic auxiliary materials and processing technology. Background technique [0002] Chalcogenide-Random Access Memory (C-RAM) is based on S.R.Ovshinsky in the late 1960s (Phys.Rev.Lett., 21, 1450-1453, 1968) and early 1970s (Appl.Phys . Lett., 18, 254-257, 1971) developed on the basis of the idea that the chalcogenide thin film can be applied to phase-change storage media. In 2001, Intel reported 4MB C-RAM for the first...

Claims

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Application Information

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IPC IPC(8): C09G1/18
Inventor 张楷亮宋志棠封松林陈邦明
Owner SHANGHAI XINANNA ELECTRONICS TECH
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