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On-line flatness control system for copper cmp

A control system and flatness technology, applied in the control of workpiece feed motion, automatic grinding control devices, manufacturing tools, etc., can solve problems such as uneven wafer surface, improve flatness, achieve global flatness and , Improve the effect of material removal rate

Inactive Publication Date: 2019-04-23
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the wafer size continues to increase, the non-uniformity of the wafer surface along the radial direction after copper CMP has become more and more obvious

Method used

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  • On-line flatness control system for copper cmp
  • On-line flatness control system for copper cmp
  • On-line flatness control system for copper cmp

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Embodiment Construction

[0012] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0013] First of all, it should be noted that the online flatness control system for copper CMP according to the embodiment of the present invention is applied to a rotary CMP device. The CMP device includes a polishing head and a polishing disc. The polishing head includes multiple pressure zones, and multiple pressure zones. The zones divide the wafer surface into multiple zones, for example, each pressure zone may correspond to a wafer surface zone. That is, the CMP apparatus employs a multi-pressure zone polishing head. Durin...

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Abstract

The invention discloses an on-line plainness control system for copper CMP (Chemical Mechanical Planarization). The on-line plainness control system comprises an on-line measurement module for judging whether a current measurement point falls within an effective measurement region according to a coordinate value of the current measurement point, calculating a corresponding measurement value according to a current output value of a thickness measurement sensor, then associating the measurement value to a partition on the surface of a subordinate wafer and calculating an average value of all the measurement values in all the partitions as a current copper layer thickness value of the corresponding partition; a partition pressure adjustment module for calculating a difference value between the copper layer thickness values of all the partitions and the copper layer thickness value of a reference region, and calculating a new pressure value of each pressure partition according to a preset pressure adjustment amount, a copper layer thickness deviation and an initial pressure value of each pressure partition; and a control module for controlling a polishing head to remove a copper layer on the surface of the wafer according to the new pressure values of all the pressure partitions.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical planarization, in particular to an online flatness control system of copper CMP. Background technique [0002] Chemical Mechanical Planarization (CMP for short) is currently the most effective method for global wafer planarization in integrated circuit manufacturing. It uses the synergy of chemistry and mechanics to achieve ultra-precision polishing of the wafer surface. In the copper CMP process, the copper removal process has a high removal rate, and the polished surface should be flat enough. However, as the wafer size continues to increase, the non-uniformity of the wafer surface along the radial direction after copper CMP has become more and more obvious. In order to solve the problem of uneven polishing of large-sized wafers, how to improve the surface flatness of wafers online has become an important problem in the control of copper CMP process. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B29/02B24B49/10B24B51/00H01L21/306
CPCB24B29/02B24B49/105B24B51/00H01L21/30625
Inventor 李弘恺路新春雒建斌沈攀
Owner TSINGHUA UNIV
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