Thin film structure for reducing laser direct writing photo-etching point or line width and its preparation method

Abstract

The invention relates to a thin film structure reducing laser direct-write photoetching point or line width and the preparing method. And the thin film structure comprises inorganic phase-transition thin film layer and buffer layer, where the inorganic phase transition thin film layer is composed of AgInSbTe or GeSbTe or SbTe, the buffer layer is made of high heat conductivity metal or semiconductor. And the thin film structure is made by DC magnetic controlled sputtering process and has advantages of simple structure, process easy to control, low substrate requirements, etc. and the test proves that it can obviously reduce the size of laser direct-write photoetching point and line width.

Description

technical field

[0001] The invention belongs to the application fields of optical information storage, microelectronic lithography and master disc lithography, and specifically relates to a film structure and a preparation method thereof for reducing laser direct writing lithography point or line width. Background technique

[0002] Laser direct writing lithography point and line width are limited by the traditional optical diffraction limit and affected by the thermal diffusion of the material itself. The diffraction limit of the light spot is D=1.22λ / NA. In order to reduce the size of the lithographic spot and line width, it is usually used to reduce the wavelength and increase the numerical aperture. The reduction of the wavelength and the increase of the numerical aperture are at the expense of the reduction of the depth of focus and the range of the field of view, so that the advantages of high resolution cannot be fully utilized. At the same time, reducing the spot di...

Examples

preparation example Construction

[0019] The preparation method of the thin film structure reducing laser direct writing lithography point or line width is characterized in that it comprises the following steps:

[0020] ①Put the glass substrate 3 into absolute alcohol, and clean it two to three times with an ultrasonic generator, 10 minutes each time;

[0021] ②Put the cleaned glass substrate into the sputtering chamber of the high-vacuum magnetron sputtering equipment after drying, and vacuumize. When the background vacuum in the sputtering chamber drops to 6.0*10 -4 At Pa, argon is passed through, and the argon pressure is maintained at 0.6-1.0Pa;

[0022] ③ preparing the buffer layer 2 on the glass substrate 3 by DC magnetron sputtering;

[0023] ④ Prepare the inorganic phase change thin film layer 1 on the buffer layer 2 by DC magnetron sputtering method.

technical field

[0001] The invention belongs to the application fields of optical information storage, microelectronic lithography and master disc lithography, and specifically relates to a film structure and a preparation method thereof for reducing laser direct writing lithography point or line width. Background technique

[0002] Laser direct writing lithography point and line width are limited by the traditional optical diffraction limit and affected by the thermal diffusion of the material itself. The diffraction limit of the light spot is D=1.22λ / NA. In order to reduce the size of the lithographic spot and line width, it is usually used to reduce the wavelength and increase the numerical aperture. The reduction of the wavelength and the increase of the numerical aperture are at the expense of the reduction of the depth of focus and the range of the field of view, so that the advantages of high resolution cannot be fully utilized. At the same time, reducing the spot di...

Examples

preparation example Construction

[0019] The preparation method of the thin film structure reducing laser direct writing lithography point or line width is characterized in that it comprises the following steps:

[0020] ①Put the glass substrate 3 into absolute alcohol, and clean it two to three times with an ultrasonic generator, 10 minutes each time;

[0021] ②Put the cleaned glass substrate into the sputtering chamber of the high-vacuum magnetron sputtering equipment after drying, and vacuumize. When the background vacuum in the sputtering chamber drops to 6.0*10 -4 At Pa, argon is passed through, and the argon pressure is maintained at 0.6-1.0Pa;

[0022] ③ preparing the buffer layer 2 on the glass substrate 3 by DC magnetron sputtering;

[0023] ④ Prepare the inorganic phase change thin film layer 1 on the buffer layer 2 by DC magnetron sputtering method.

Images