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A kind of preparation method of gesbte series alloy powder

An alloy powder and powder technology, applied in the field of doped alloy material production, can solve the problems of high non-proportioned impurity content and oxygen content, generation of impurity ions, unfavorable phase change targets, etc., and achieve low non-proportioned impurity content , The effect of reducing oxygen content, uniform distribution of components and no segregation

Active Publication Date: 2021-01-05
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the synthesis ability of GeSbTe alloy powder prepared by the above method is low, the composition deviation is serious, and the non-proportional impurity content and oxygen content are high, which is not conducive to the production of phase change targets with uniform and stable structure, and may also make Impurity ions generated during sputtering

Method used

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preparation example Construction

[0035] The invention provides a method for preparing GeSbTe alloy powder, comprising:

[0036] A) mixing Sb, Te and the first dopant substance to obtain the first mixed material; the first dopant substance is one or more of Sn, Bi and In; the first dopant substance is 1. The content in the mixed material is 0wt% to 15wt%;

[0037] B) vacuum smelting the first mixed material at 640-690° C. to obtain a SbTe alloy;

[0038] C) mixing the SbTe alloy, Ge and a second dopant to obtain a second mixed material; the second dopant is one or more of Ag, Cu, Si and C; the first The content of the second doping substance in the second mixed material is 0wt% to 10wt%;

[0039] D) Under the conditions of nitrogen and hydrogen, the second mixed material is subjected to powder synthesis to obtain GeSbTe alloy powder.

[0040] The present invention first mixes Sb, Te and the first dopant substance to obtain the first mixed material; the first dopant substance is one or more of Sn, Bi and In;...

Embodiment 1

[0070] Germanium powder (Ge), antimony ingot (Sb), tellurium ingot (Te) and tin ingot (Sn) with a purity higher than 99.99% are prepared. Accurately weigh 335.2g of antimony, 614.8g of tellurium, and 30g of the first doping substance Sn, put the raw materials in a glass tube and then vacuum seal it, with a vacuum degree of 3×10 -2 Pa. Place the sealed raw materials in a swing furnace with a temperature of 690°C for vacuum smelting treatment. All tellurium antimony metals are melted into a liquid phase, start the swing, and keep warm for 15 minutes to fully mix and react the components to obtain Sn-doped Sb 4 Te 7 alloy. Sn-doped Sb 4 Te 7 After the alloy is broken into small pieces, it is pulverized in a small high-speed pulverizer, and sieved to obtain Sn-doped Sb with a particle size not greater than 45 μm. 4 Te 7 powder. Weigh 40g of germanium powder, 784g of Sn-doped Sb 4 Te 7 powder, and put it in a small three-dimensional mixer, and take it out after 6 hours of ...

Embodiment 2

[0072] Prepare germanium powder (Ge), antimony ingot (Sb), tellurium ingot (Te) and carbon powder (C) with a purity higher than 99.995%. Accurately weigh 883.8g of antimony and 1852.5g of tellurium, place the raw materials in a quartz tube, and then vacuumize and seal them with quartz sealing, with a vacuum degree of 3×10 -3 Pa. Place the sealed raw materials in a swing furnace with a temperature of 640°C for vacuum smelting treatment. All tellurium antimony metals are melted into a liquid phase, start the swing, and keep warm for 30 minutes to fully mix and react the components to obtain Sb 2 Te 4 alloy. Will Sb 2 Te 4 After the alloy is broken into small pieces, it is pulverized in a small high-speed pulverizer, and sieved to obtain Sb with a particle size not greater than 74 μm. 2 Te 4 powder. Weigh 175.8g germanium powder, 1824.2gSb 2 Te 4 powder, and 80g of carbon powder as the second dopant substance, and put them in a small three-dimensional mixer, and take the...

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Abstract

The invention provides a method for preparing GeSbTe alloy powder. Sb, Te and an appropriate amount of the first dopant are mixed, and the vacuum melting treatment is carried out at 640-690°C, which reduces the sealing melting temperature and prevents the tellurium component Composition deviation caused by volatilization is safer for dealing with high vapor pressure element tellurium, low-cost glass tubes can be used, single-tube synthesis capacity is increased, and the difficulty of vacuum sealing is reduced. Then, the SbTe alloy after vacuum smelting treatment, Ge and an appropriate amount of the second dopant are mixed, and the powder synthesis is carried out under the condition of protective gas. The powder synthesis process has a large processing capacity, and the component distribution is uniform without segregation. The protective atmosphere of hydrogen reduces the oxidized material and reduces the oxygen content of the alloy powder. The composition of the GeSbTe alloy powder obtained by the preparation method disclosed by the invention is uniform, the content of non-proportioned impurities is low, and the content of oxygen is low.

Description

technical field [0001] The invention relates to the technical field of production of dopable alloy materials, in particular to a preparation method of GeSbTe alloy powder. Background technique [0002] Phase change materials exist in a crystalline state or an amorphous state due to temperature differences, and these two states can change reversibly with temperature changes. In the crystalline state, phase change materials have a more ordered arrangement of atoms and lower electrical resistance. This feature enables phase change materials to be used in a new type of non-volatile memory device, that is, phase change random access memory (PhaseChange Random Access Memory, PRAM). The prior art mainly utilizes physical vapor deposition such as magnetron sputtering to prepare thin films of these materials, which have good operability and film stability. [0003] Among all kinds of phase change materials, ternary chalcogenides, such as germanium antimony tellurium ternary alloy (...

Claims

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Application Information

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IPC IPC(8): B22F9/04B22F9/16B22F1/00C22C1/02
CPCB22F1/0003B22F9/04B22F9/16C22C1/02
Inventor 刘运连朱刘狄聚青胡智向文崇斌潘磊
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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