GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor

A manufacturing method and a random phase transition technology, which are applied in static memory, digital memory information, information storage, etc., can solve problems such as difficulty in forming GeSbTe thin films, and achieve the effect of good crystallinity and surface morphology

Inactive Publication Date: 2007-12-26
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when depositing this GeSbTe thin film, different deposition behaviors occur on the insulating film and the bottom electrode contact layer, making it extremely difficult to form a uniform GeSbTe thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor
  • GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor
  • GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0025] 1A, 1B and 1C are cross-sectional views illustrating a method of manufacturing a GeSbTe thin film according to an embodiment of the present invention. 1A to 1C, one or two selected from the group consisting of a Ge precursor, a Sb precursor and a Te precursor are supplied to the surface of an amorphous material layer 4 formed on a substrate 2, thereby forming a layer composed of Ge, Sb, Te, Sb 2 Te 3 Or the seed layer 6 made of Ge doped with Sb. Next, a Ge precursor, a Te precursor, and an Sb precursor are supplied to the surface of the seed layer 6 , thereby forming the GeSbTe thin film 8 . Here, the seed layer 6 has good adhesion to the amorphous material layer 4 and can provide nucleation sites for forming the GeSbT...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a method for manufacturing GeSbTe film with good crystalline and good surface appearance on non-crystal material layer, a method for manufacturing phase change random access memory using the GeSbTe film manufacturing method, and phase change random access memory. The GeSbTe film manufacturing method includes the following operations: to obtain seed crystal layer formed from Ge, Sb, Te, Sb2Te3 or Ge doped Sb, by supplying one or two kinds selected from set composed of Ge precursor, Sb precursor and Te precursor to the non-crystal material layer upper surface; and GeSbTe film is formed by supplying Ge precursor, Sb precursor and Te precursor to the seed crystal layer upper surface.

Description

technical field [0001] The invention relates to a GeSbTe film manufacturing method. More specifically, the present invention relates to a method of manufacturing a GeSbTe thin film with good crystallinity and good surface morphology on an amorphous material layer, and a method of manufacturing a phase change random access memory using the GeSbTe thin film manufacturing method. Background technique [0002] A phase change random access memory (hereinafter referred to as PRAM) is a device that stores binary information using a property of changing a phase change material such as GeSbTe into a crystalline state or an amorphous state by localized heat generated by an electric pulse. In these PRAMs, the memory cell that stores binary information includes a phase change layer, a bottom electrode contact (BEC) layer, and a switching transistor. The switching transistors are usually formed on a silicon wafer, and the BEC layer and the phase change layer are formed on the switching ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L21/02H01L21/82H01L27/24
CPCH01L45/143H01L45/148C23C16/0272H01L27/2436H01L45/06H01L45/144C23C16/305H01L45/1683H01L45/126H01L45/1616H01L45/1233H10B63/30H10N70/8413H10N70/8825H10N70/884H10N70/231H10N70/023H10N70/066H10N70/8828H10N70/826G11C13/0004
Inventor 申雄澈姜允善
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap