GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor

A manufacturing method and a random phase transition technology, which are applied in static memory, digital memory information, information storage, etc., can solve problems such as difficulty in forming GeSbTe thin films, and achieve the effect of good crystallinity and surface morphology
CN101093873AInactive Publication Date: 2007-12-26SAMSUNG ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Publication Date
2007-12-26
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The present invention discloses a method for manufacturing GeSbTe film with good crystalline and good surface appearance on non-crystal material layer, a method for manufacturing phase change random access memory using the GeSbTe film manufacturing method, and phase change random access memory. The GeSbTe film manufacturing method includes the following operations: to obtain seed crystal layer formed from Ge, Sb, Te, Sb2Te3 or Ge doped Sb, by supplying one or two kinds selected from set composed of Ge precursor, Sb precursor and Te precursor to the non-crystal material layer upper surface; and GeSbTe film is formed by supplying Ge precursor, Sb precursor and Te precursor to the seed crystal layer upper surface.
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Description

technical field

[0001] The invention relates to a GeSbTe film manufacturing method. More specifically, the present invention relates to a method of manufacturing a GeSbTe thin film with good crystallinity and good surface morphology on an amorphous material layer, and a method of manufacturing a phase change random access memory using the GeSbTe thin film manufacturing method. Background technique

[0002] A phase change random access memory (hereinafter referred to as PRAM) is a device that stores binary information using a property of changing a phase change material such as GeSbTe into a crystalline state or an amorphous state by localized heat generated by an electric pulse. In these PRAMs, the memory cell that stores binary information includes a phase change layer, a bottom electrode contact (BEC) layer, and a switching transistor. The switching transistors are usually formed on a silicon wafer, and the BEC layer and the phase change layer are formed on the switching ...

Claims

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