GeSbTe phase change material thin film device with high bonding capacity and low resistance

Abstract

The invention discloses a GeSbTe phase change material thin film device with high bonding capacity and low resistance. The device comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer; the lower electrode layer, the first GeSbTe material layer, the molybdenumdisulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially stacked on the substrate layer; the lower electrode layer isof a double-layer composite structure; the lower electrode layer comprises a Cr-Ag alloy plating layer plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy plating layer, wherein M in the Cr-M alloy material layer is selected from Mn, Ta, TaN, Ti, W, Ni, Al, Co or Cu. The improved thin film device based on the GeSbTe phase change material has thecharacteristics of strong thermal bonding capability, good consistency, small internal resistance and long service life.

Description

technical field [0001] The invention relates to the field of phase change memory, in particular to a laminated phase change thin film device with complementary properties of multilayer materials. Background technique [0002] As a non-volatile storage technology, phase-change memory (PRAM) has the characteristics of anti-vibration and anti-radiation, and has broad application prospects. GeSbTe memory material is currently the research hotspot of the box-variable memory material. [0003] In view of the uncontrollability of traditional GeSbTe storage materials in the preparation process of TiN alloying or Zn doping, Chinese invention patent CN106374045A discloses a thin film device based on GeSbTe phase change materials, including a substrate layer, a lower electrode layer, The first GeSbTe material layer, molybdenum disulfide layer, second GeSbTe material layer, graphene layer, upper electrode layer and protective layer, the first GeSbTe material layer is an ion-doped GeSbT...

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Problems solved by technology

[0004] However, this thin-film device has the following defects in practical application: as the substrate layer is a glass sheet, silicon sheet or carbonate sheet, which are basically insulating materials; the lower electrode layer is made of Mn, Ta, TaN, Ti, W, Ni, Al , Co and / or Cu metal materials, there is a defect of chemical activity deviation, and the chemical bonding between the lower electrode layer and the substrate layer is relatively difficult, which restricts the bonding strength of the two; the surface of the following electrode layer is provided with a first GeSbTe Material layer, the lower electrode layer made of metal has oxidation and sulfuration problems, and the resistivity increases, which affects the conduction effect between the lower electrode layer and the first GeSbTe material layer; for example, the graphene layer is covered on the second GeSbTe material layer by magnetron sputtering. On the surface of the material layer, graphene is a two-dimensional structure of hexagonal honeycomb lattice, and the van der Waals force is strong, so it is easy to reunite in the second GeSbTe material matrix, so that the conduction between the graphene layer and the second GeSbTe material layer Effect

All of the above have affected the reduction of the resistance of the storage device, and the uncertainty of the processing process has caused the impact of product consistency

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