GeSbTe phase change material thin film device with high bonding capacity and low resistance

A combination ability and material thin film technology, applied in the field of phase change storage, can solve the problems affecting the conduction effect between the lower electrode layer and the first GeSbTe material layer, affecting the resistance reduction of storage devices, and affecting product consistency, so as to facilitate scale Good production and interface binding ability and good consistency

CN111416038APending Publication Date: 2020-07-14GUANGDONG UNIV OF PETROCHEMICAL TECH

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Patent Information

Authority / Receiving Office: CN · China
Patent Type: Applications(China)
Current Assignee / Owner: GUANGDONG UNIV OF PETROCHEMICAL TECH
Publication Date: 2020-07-14

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Abstract

The invention discloses a GeSbTe phase change material thin film device with high bonding capacity and low resistance. The device comprises a lower electrode layer, a first GeSbTe material layer, a molybdenum disulfide layer, a second GeSbTe material layer, a graphene layer, an upper electrode layer and a protective layer; the lower electrode layer, the first GeSbTe material layer, the molybdenumdisulfide layer, the second GeSbTe material layer, the graphene layer, the upper electrode layer and the protective layer are sequentially stacked on the substrate layer; the lower electrode layer isof a double-layer composite structure; the lower electrode layer comprises a Cr-Ag alloy plating layer plated on the substrate layer and a Cr-M alloy material layer arranged on the surface of the Cr-Ag alloy plating layer, wherein M in the Cr-M alloy material layer is selected from Mn, Ta, TaN, Ti, W, Ni, Al, Co or Cu. The improved thin film device based on the GeSbTe phase change material has thecharacteristics of strong thermal bonding capability, good consistency, small internal resistance and long service life.

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Description

technical field

[0001] The invention relates to the field of phase change memory, in particular to a laminated phase change thin film device with complementary properties of multilayer materials. Background technique

[0002] As a non-volatile storage technology, phase-change memory (PRAM) has the characteristics of anti-vibration and anti-radiation, and has broad application prospects. GeSbTe memory material is currently the research hotspot of the box-variable memory material.

[0003] In view of the uncontrollability of traditional GeSbTe storage materials in the preparation process of TiN alloying or Zn doping, Chinese invention patent CN106374045A discloses a thin film device based on GeSbTe phase change materials, including a substrate layer, a lower electrode layer, The first GeSbTe material layer, molybdenum disulfide layer, second GeSbTe material layer, graphene layer, upper electrode layer and protective layer, the first GeSbTe material layer is an ion-doped GeSbT...

Claims

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