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Method for preparing gold electrode on CdZnTe crystal

A technology for preparing gold and crystals, which is applied in circuits, electrical components, semiconductor devices, etc. It can solve the problems of difficult control of film thickness, difficulty in connecting external leads, and falling off, so as to prevent electrode instability, good ohmic characteristics, and prevent electrode Shedding effect

Inactive Publication Date: 2010-06-16
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The uniformity of the gold electrode film prepared by AuCl3 is poor, it is difficult to control the film thickness, and it is difficult to realize the external lead connection
[0003] Document 1 "Research on the Electrical Properties of P-type High Resistance CdZnTe Crystal Surface Contact [J] Journal of Functional Materials and Devices, 1999, 5(2): 91-96" discloses a method for preparing gold electrodes on CdZnTe crystals , using AuCl3 to prepare gold electrodes on CdZnTe crystals, but the AuCla film is easy to fall off during wire welding
[0004] The gold electrode prepared by ion sputtering has a high binding force to the CZT substrate, but the ohmic contact is poor and it is difficult to realize the connection of the external lead; Document 2 "Ultrasonic welding of CdZnTe contact electrode and lead [J]. Chinese Journal of Nonferrous Metals, 2009, 19 (5): 919-923." discloses a method for preparing gold electrodes on cadmium zinc telluride crystals, the method adopts sputtering gold plating to prepare gold electrodes, but adopts gold wire ball ultrasonic pressure welding on it for external lead connection low success rate
[0005] The gold electrode prepared by vapor deposition has a high bonding force with the outer lead due to its good uniformity and density, but it has poor bonding force with the CZT substrate, and it cannot be connected with the outer lead from the CZT surface.
Document 3 "Study On Au-CdZnTe Contact Interface Deposited By Different Processing, Proceedings of the International Symposium on Materials Science and Engineering, 2005, 473-476" discloses a method for preparing gold electrodes on cadmium zinc telluride crystals, which uses Gold electrodes are prepared by evaporation, but the electrode adhesion is relatively small, and it is basically impossible to connect external leads

Method used

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  • Method for preparing gold electrode on CdZnTe crystal
  • Method for preparing gold electrode on CdZnTe crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: select component to be Cd 0.8 Zn 0.2 Te wafers were used to prepare Au electrodes.

[0017] First, select Cd 0.8 Zn 0.2 The Te single crystal was wire-cut, mechanically polished, and cleaned by an ultrasonic cleaner for 15 minutes. After taking it out, it was observed under a microscope to confirm that the surface was clean and pollution-free, and then dried with nitrogen.

[0018] In the second step, put the processed CZT wafer into a KYKYSBC-12 ion sputtering apparatus, and sputter a 30nm-thick Au film on the CZT substrate in an environment with a vacuum degree of 6Pa and a current of 10A.

[0019] The third step is to quickly take the CZT wafer out of the sputtering apparatus and put it into the ZHD-300 resistance evaporation coating machine. The vacuum degree is 2×10 -4 Under the Pa environment, a 60 nm Au film was deposited on the sputtered Au film.

[0020] The fourth step is rapid atmosphere annealing. Quickly take the CZT wafer out of the eva...

Embodiment 2

[0025] Example 2: Au electrodes were prepared by selecting a wafer whose composition was Cd0.8Zn0.2Te.

[0026] First, select a Cd0.8Zn0.2Te single crystal by wire cutting, mechanical polishing, and use an ultrasonic cleaner to clean it for 20 minutes. After taking it out, observe it under a microscope to confirm that the surface is clean and pollution-free, and then dry it with nitrogen.

[0027] In the second step, put the processed CZT wafer into a KYKYSBC-12 ion sputtering apparatus, and sputter a 60nm-thick Au film on the CZT substrate in an environment with a vacuum degree of 4Pa and a current of 11A.

[0028] The third step is to quickly take the CZT wafer out of the sputtering apparatus and put it into the ZHD-300 resistance evaporation coating machine. The vacuum degree is 2×10 -4 A 40nm Au film was vapor-deposited on the sputtered Au film under Pa environment.

[0029] The fourth step is rapid atmosphere annealing. Quickly take the CZT wafer out of the evaporation ...

Embodiment 3

[0031] Example 3: Au electrodes were prepared by selecting a wafer whose composition was Cd0.8Zn0.2Te.

[0032] First, select a Cd0.8Zn0.2Te single crystal by wire cutting, mechanical polishing, and use an ultrasonic cleaner to clean it for 19 minutes. After taking it out, observe it under a microscope to confirm that the surface is clean and pollution-free, and then dry it with nitrogen.

[0033] In the second step, put the processed CZT wafer into a KYKYSBC-12 ion sputtering apparatus, and sputter a 60nm-thick Au film on the CZT substrate in an environment with a vacuum degree of 5Pa and a current of 8A.

[0034] The third step is to quickly take the CZT wafer out of the sputtering apparatus and put it into the ZHD-300 resistance evaporation coating machine. The vacuum degree is 2×10 -4 A 40nm Au film was vapor-deposited on the sputtered Au film under Pa environment.

[0035] The fourth step is rapid atmosphere annealing. Quickly take the CZT wafer out of the evaporation c...

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Abstract

The invention discloses a method for preparing a gold electrode on a CdZnTe crystal, which is used for preparing the gold electrode and a lead-out wire on the CdZnTe crystal. The method comprises the following steps: firstly, selecting a high resistance CZT with the resistance greater than 109 ohms as a CZT substrate of the electrode; sputtering a layer of Au film; depositing a layer of Au film; and immediately putting the substrate into a quick atmosphere annealing furnace, and performing quick annealing in the nitrogen atmosphere to complete the preparation of the Au electrode, wherein the annealing parameters are that: the temperature is between 150 and 250 DEG C and the time is 5 to 10 minutes. Because a method of performing ion sputtering first, then gold depositing and final annealing is adopted to prepare the gold electrode, the method has the advantage of large bonding force between Au and the CZT substrate in the sputtering plating and the advantages of good compactness and evenness of the Au film and strong bonding force between the Au film and the lead-out wire in the gold depositing, and effectively prevents the electrode from falling off and being unstable. The electrode with good bonding force and good ohm property is prepared and the effective connection of the electrode and the lead-out wire is realized.

Description

technical field [0001] The invention relates to a method for preparing a gold electrode on a crystal, in particular to a method for preparing a gold electrode on a cadmium zinc telluride crystal. Background technique [0002] As a detector material, CZT needs to be made of metal electrodes, which requires strong metal film adhesion, good ohmic contact performance, and the connection of external leads can be realized. Au / CZT contact electrodes are approved CZT metal electrodes. The existing methods for preparing CZT gold electrodes include AuCl3, ion sputtering gold plating, and gold evaporation to prepare gold electrodes. The uniformity of the gold electrode film prepared by AuCl3 is poor, it is difficult to control the film thickness, and it is difficult to realize the external lead connection. [0003] Document 1 "Research on the Electrical Properties of P-type High Resistance CdZnTe Crystal Surface Contact [J] Journal of Functional Materials and Devices, 1999, 5(2): 91-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18G01T1/24
CPCY02P70/50
Inventor 傅莉任洁聂中明孙玉宝
Owner NORTHWESTERN POLYTECHNICAL UNIV
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