This invention provides a method for analyzing the
femtosecond laser-induced damage behavior of Zn-doped KDP
crystal surfaces, belonging to the field of
engineering optics technology based on
computer data processing. First, the effects of
Zn doping concentration on the bandgap and electroacoustic
coupling of the KDP
crystal are analyzed using UV-Vis
absorption spectroscopy and
Brillouin scattering spectroscopy, respectively. Then, a one-dimensional model is constructed, and the
time evolution of
electron density, lattice temperature, and
electron temperature on the Zn-doped KDP
crystal surface under
femtosecond laser irradiation is simulated using a
rate equation for
electron density accumulation and a two-temperature model. The influence of
Zn doping concentration on the damage behavior of the KDP crystal surface is theoretically analyzed, and a theoretical model for calculating the
femtosecond laser-induced damage threshold is established, thus non-destructively determining the optimal
Zn doping concentration. This invention avoids contact with real samples, improving sample utilization; the
simulation process is more stable and controllable with high data
repeatability; it can also shorten the research cycle and accelerate the selection of the optimal
doping concentration.