39 results about "Zn doping" patented technology

A process for making a thin film ZnO / Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

The invention discloses a preparation method of a water-soluble Zn-doped CdTe quantum dot CdxZn1-xTe. The preparation method comprises the following steps of: mixing a cadmium salt and a zinc salt or oxides of cadmium and zinc with a water-soluble mercapto-compound in a water phase; injecting prepared tellurium hydride to obtain a CdxZn1-xTe precursor solution; putting the solution into a hydro-thermal reaction kettle; and reacting to obtain a CdxZn1-xTe fluorescent quantum dot. The method is implemented in a water phase, is safe, easy and convenient for operation, is easy for mass productionand is environmentally friendly; the obtained product has high performance; even Zn doping molar percentage (i.e., the molar percentage of Zn to Cd in CdxZn1-xTe) surpasses 70 percent, the obtained quantum dot has high fluorescent quantum yield and high light stability and can be widely applied to photoelectric conversion, luminous and display materials, biological detection and targeting tracing; and the content and the toxicity of Cd are greatly lowered.

The invention discloses an electric field-regulated selective crystallization synthesized double perovskite magnesium ion battery negative electrode material and a preparation method thereof. The negative electrode material is characterized in that the composition of the negative electrode material is MgY0.7Li0.3Zr0.8Cu0.1Zn0.1NbO6, and an electric field having a specific direction is applied during a high-temperature solid phase reaction in the preparation process to change the crystal characteristics of lattice defect crystals and grow cylindrical particles along the direction of the electric field; the non-uniform crystallization on the surfaces of the cylindrical particles makes a sintering aid non-uniformly adhered to the position having a large surface curvature radius and partially bonded to form a continuous porous morphology; the morphology is in favor of reducing the crystal boundary resistance and the electron migration resistance and accelerating the migration ability of magnesium ions and the oxidation reduction reaction rate; the material has a certain structure rigidity, so the volume change in the charge and discharge process is buffered; and the high-performance lithium ion battery negative electrode material is formed through the co-occupation of Mg and Y in an A position, the Li doping in a Y position and the Cu and Zn doping in a B position.

The invention provides a Zn in-situ doping P type hexagonal boron nitride film and a preparation method thereof, and belongs to the technical field of semiconductor material preparation and semiconductor doping. According to the method, a high-purity hBN target, a high-purity Zn target and a cleaned substrate are put into a magnetron sputtering growth chamber; a radio frequency magnetron double-target co-sputtering technology is used; Zn impurities are doped in situ in the hBN film growth process; after the growth completion, the film is subjected to in-situ annealing in the N2 atmosphere; thefilm is cooled to the chamber temperature under the N2 gas protection, so that the Zn in-situ doping P type hBN film is obtained on the substrate. The method is simple; the cost is low; safety and reliability are realized; the toxicity and harm do not exist; the doping concentration can be controlled through regulating the target distance and the sputtering power of the Zn target; the B atom lattice point position can be easily occupied by Zn in the hBN film and has the lower forming energy and smaller impurity activation energy as the substituting impurities, so that the Zn doping P type hBNfilm with lower resistivity can be obtained; the performance is stable.