39 results about "Zn doping" patented technology

A method of fabricating a semiconductor device, having an interim reduced-oxygen Cu-Zn alloy thin film (30) electroplated on a blanket Cu surface (20) disposed in a via (6) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu-Zn alloy thin film (30); filling the via (6) with further Cu (26); annealing and planarizing the interconnect structure (35); and a semiconductor device thereby formed. The reduction of electromigration in copper interconnect lines (35) is achieved by decreasing the drift velocity in the copper line (35) / via (6), thereby decreasing the copper migration rate as well as the void formation rate, by using an interim conformal Cu-rich Cu-Zn alloy thin film (30) electroplated on a Cu surface (20) from a stable chemical solution, and by controlling the Zn-doping thereof, which improves also interconnect reliability and corrosion resistance.

The invention discloses a Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof. The method specifically comprises the following steps: using a c-surface sapphire single crystal as the substrate, using Zn-doped beta-Ga2O3 film (Zn: Ga2O3) preferentially grown along crystal plane as shown in the description through magnetron sputtering growth as a light absorbing layer, and sputtering an Au / Ti interdigital electrode on the light absorbing layer as a collecting electrode of a photon-generated carrier, and preparing to acquire the Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector. The speed of photoresponse of the Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector through the Zn doping, the Zn particles with specific number are placed around the light-up circle of the Ga2O3 target to grow the Zn: Ga2O3 film with specific concentration, and the method is simple. A commercial preparation method is used for growing the film through the magnetron sputtering, the process is strong in controllability, and easy to operate; the obtained film is compact in surface, stable and uniform in thickness, capable of being prepared in large scale, and good in repeatability. The Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector prepared through the invention has potential application prospect in the solar-blind ultraviolet detection field.

The present invention relates to the semiconductor device fabrication industry. More particularly a semiconductor device, having an interim reduced-oxygen Cu—Zn alloy thin film (30) electroplated on a blanket Cu surface (20) disposed in a via (6) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu—Zn alloy thin film (30); filling the via (6) with further Cu (26); annealing and planarizing the interconnect structure (35). The reduction of electromigration in copper interconnect lines (35) is achieved by decreasing the drift velocity in the copper line (35) / via (6), thereby decreasing the copper migration rate as well as the void formation rate, by using an interim conformal Cu-rich Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) from a stable chemical solution, and by controlling the Zn-doping thereof, which improves also interconnect reliability and corrosion resistance.

A method of reducing electromigration in a dual-inlaid copper interconnect line (3) by filling a via (6) with a Cu-rich Cu-Zn alloy (30) electroplated on a Cu surface (200 from a stable chemical solution, and by controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using a reduced-oxygen Cu-Zn alloy as fill (30) for the via (6) in forming the dual-inlaid interconnect structure (35). The alloy fill (30) is formed by electroplating the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants, thereby electroplating the fill (30) on the Cu surface (20); and annealing the electroplated Cu-Zn alloy fill (30); and planarizing the Cu-Zn alloy fill (30), thereby forming the dual-inlaid copper interconnect line (35).

The invention discloses a preparation method of a water-soluble Zn-doped CdTe quantum dot CdxZn1-xTe. The preparation method comprises the following steps of: mixing a cadmium salt and a zinc salt or oxides of cadmium and zinc with a water-soluble mercapto-compound in a water phase; injecting prepared tellurium hydride to obtain a CdxZn1-xTe precursor solution; putting the solution into a hydro-thermal reaction kettle; and reacting to obtain a CdxZn1-xTe fluorescent quantum dot. The method is implemented in a water phase, is safe, easy and convenient for operation, is easy for mass productionand is environmentally friendly; the obtained product has high performance; even Zn doping molar percentage (i.e., the molar percentage of Zn to Cd in CdxZn1-xTe) surpasses 70 percent, the obtained quantum dot has high fluorescent quantum yield and high light stability and can be widely applied to photoelectric conversion, luminous and display materials, biological detection and targeting tracing; and the content and the toxicity of Cd are greatly lowered.

The invention relates to a super capacitor electrode material Zn doping NiCo2O4 compound and a preparation method; the method comprises the following steps: 1, allowing a mixed solution containing zinc nitrate, nickel nitrate, cobalt nitrate, ammonium fluoride and urea to be subjected to hydro-thermal reaction with a conductive substrate, thus obtaining the conductive substrate with an attached precursor, wherein the zinc nitrate, nickel nitrate and cobalt nitrate mol ratio is 0.1-1:1:2; 2, calcining the conductive substrate with the attached precursor, and allowing the precursor attached to the conductive substrate to turn to the Zn doping NiCo2O4 compound through calcinations. The material has the netted nanometer sheet array formed by mutually interpenetrating and braiding nano wires, and has a highly porous structure to infiltrate an electrolyte, thus improving the electrochemistry performance; the Zn doping content can be adjusted to change the electrochemistry performance.

A process for making a thin film ZnO / Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

The invention relates to a mechanoluminescence composite material as well as a preparation method and application thereof. Raw materials for preparing the mechanoluminescence composite material comprise eggshells, zinc sulfide and a compound containing doping ions, wherein the mechanoluminescence composite material comprises mZnS-nCaZnOS:xM, M is the doping ions, and m, n and x respectively represent mole numbers of ZnS, CaZnOS and M. Compared with a mechanoluminescence composite material prepared by taking high-purity calcium carbonate as a calcium source, the mechanoluminescence composite material prepared by taking eggshells as the calcium source and combining zinc sulfide and doped ions is low in cost and wide in raw material source. In addition, experiments prove that other componentsin the eggshell do not influence the luminescence property of the mechanoluminescence composite material. Therefore, the mechanoluminescence composite material is low in cost, good in luminescence property and beneficial to large-scale production and application.

The invention discloses a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a conductive glass layer, a compact titanium dioxide film, a porous titanium dioxide film, a methylamine lead iodine polycrystalline film, a hole-transport material layer and a metal electrode layer in sequence. The perovskite solar cell is characterized in that the porous titanium dioxide film is Zn-doped, and after doping, mole ratio between zinc atoms and titanium atoms is 0.1%-0.4%:1. The perovskite solar cell has the advantages that the Zn-doped porous titanium dioxide is utilized as a photo anode of the perovskite solar cell; a titanium dioxide conduction band can be changed through Zn-doping, and the titanium dioxide conduction band is allowed to move down, so that a gap between a methylamine lead iodine conduction band serving as a perovskite light absorption layer and Zn-doped porous titanium dioxide conduction band is enlarged, electrons are allowed to be easier to inject and pass, and photoelectric conversion efficiency of the perovskite solar cell can be improved.

In certain example embodiments, a coated article includes a Zn-doped zirconium based layer before heat treatment (HT). The coated article is heat treated sufficiently to cause the Zn-doped zirconium based layer to transform into a Zn-doped zirconium oxide based layer that is scratch resistant and / or chemically durable. The doping of the layer with Zn has been found to improve scratch resistance and / or corrosion resistance.

The invention relates to a zinc-doped tin oxide transparent conductive thin film and a preparation method and application thereof. The Zn doping concentration in the zinc-doped tin oxide transparent conductive thin film is 0-12 at% and does not include 0 at%, and the preparation method of the zinc-doped tin oxide transparent conductive thin film is a metal organic chemical vapor deposition method.According to the zinc-doped tin oxide transparent conductive thin film, common and easily available zinc is selected as a doping element, so that the problems of toxicity, rare property and the likeof the doping element of an existing transparent conductive thin film can be solved; the zinc-doped tin oxide transparent conductive thin film also has the advantages of relatively low resistivity andsurface resistance, relatively high carrier concentration and electron mobility, excellent thermal stability and chemical stability of acid corrosion resistance, high light transmittance of a visible-intermediate infrared region and the like; and particularly the problem that an existing indium tin oxide transparent conductive thin film is insufficient in thermal stability and acid resistance canbe solved. In addition, the preparation method is simple to operate, low in raw material cost and suitable for large-scale popularization.

The invention discloses a method for preparing a low-indium-content indium tin oxide film through co-doping tin and zinc. The low-indium-content indium tin oxide ITO film is prepared through the magnetron sputtering technology. Used target materials are ITO ceramic targets with 4-10%wt of doped Sn. ZnO ceramic targets cover the target materials, wherein the diameter of the ZnO ceramic targets is 1-3cm. The thickness of the ZnO ceramic targets is 0.3-0.5cm. The purity of the ZnO ceramic targets is 99.0-99.99%wt. A low-indium-content high-quality ITO transparent conducting film is prepared on a glass substrate. The doping amount of tin and zinc is 10%-25%wt. Preferred orientation along (400) surface is adopted. The even thickness of the film is 1300-1800nm. The specific resistance of the film is 2-9*10-3 omega.cm. The light transmittance is larger than 90%, and the In content is 75%-90%wt. The method overcomes the limitation of preparing the ITO film through the single doping technology, namely, the largest doping amount of Sn can not surpass 10%. The method can realize effective compound dopping of electrons and electron holes, and greatly improves the dopping volume dose so as to reduce the indium content of the ITO membrane, and realize the purposes of reducing cost and protecting resource environments.

The invention relates to Zn-doped VO2 powder and a method for preparing a composite film by using the powder, which belong to the field of new materials and energy conservation and environmental protection. The preparation method of Zn-doped VO2 powder comprises the following steps of dispersing V2O5 powder and organic acid in a solvent, and adding a doped precursor to obtain a reaction precursor solution, carrying out solvothermal reaction on the reaction precursor solution at 180-280 DEG C for 8-24 hours, sequentially carrying out water washing and alcohol washing on precipitates generated after the reaction, carrying out vacuum filtration, and drying at 60-80 DEG C for 10-24 hours, and carrying out heat treatment for 0.5-3 hours at 450-750 DEG C under the protection of N2 to obtain Zn-doped VO2 powder. The main crystal phase of the powder is M-phase VO2, the powder has good thermally induced phase change characteristic, the phase transition temperature from M-phase VO2 to R-phase VO2 is lower than 68.5 DEG C, and the visible light transmittance and sunlight regulation capability of the VO2 powder after thermally induced phase change are further improved by Zn doping.

The invention discloses a variable doping structure of a transmission-type photoelectric cathode material for enhancing thermal stability. An AlGaAs corrosion barrier layer, a GaAs zinc heavy doping layer, a GaAs zinc light doping layer, a GaAs carbon gradient doping layer, a GaAs spacer layer and an AlGaAs window layer are arranged sequentially upwards on a GaAs100 substrate material layer. The variable doping structure of the transmission-type photoelectric cathode material for enhancing the thermal stability has the advantages of: enhancing short wave response of a transmission-type GaAs or InGaAs photoelectric cathode and improving the thermal stability during the photoelectric cathode technical process as the carbon doping and variable doping technologies are adopted; reducing a caesiated exhaustion region and increasing an escaping probability of photon-generated carriers as the variable doping comprehensively adopts zinc and carbon doping, and a caesiated surface adopts the zinc heavy doping; reducing a recombination rate of minority carriers of the interface as the interface of the window layer adopts the carbon light doping; and optimizing a high-performance photoelectric cathode as the carbon variable doping is adopted between an interface of the window layer and the zinc heavy doping layer to form a built-in electric field with good thermal stability.

The invention belongs to the field of low-dimension nano membrane materials, and particularly relates to a two-dimensional Zn doping Ca2So nano membrane and a chemical gaseous phase precipitation method thereof. A silica dish containing Ca powder is placed in the front area of a tri-temperature-zone high-temperature tubular furnace, a silica dish containing Zn powder is placed in the middle of thethree-temperature-zone high-temperature tubular furnace, and a pre-processed glass substrate is placed at the rear area of the three-temperature-zone high-temperature tubular furnace. The front, middle and rear areas of the three-temperature-zone high-temperature tubular furnace is heated under a certain temperature increasing rate with the presence of argon and SiH4, materials generated by reaction precipitate on the glass substrate after a certain period of reaction, and the two-dimensional Zn Ca2Si doping membrane material is obtained after performing in-situ annealing on the materials generated in the reaction in the tubular furnace. The method has the advantages that the preparation technology is simple, the purity of productions is higher, it is expected to achieve the production oflarge-scale high-quality two-dimensional Zn Ca2Si doping nano membrane, and there exists excellent industrializing prospect.

The invention provides a continuous electron ion fast conducting type double perovskite magnesium ion battery cathode material and a preparation method thereof. The cathode material is composed of Mg0.8Sr0.2La0.5Y0.2Li0.3Ti0.8Cu0.1Zn0.1NbO6, a continuous porous structure of gel is used as a template in a preparation process to form a continuous porous double perovskite structure product with mutually adhered particles; meanwhile, a continuous carbon film with high conductivity and adhered on the surface of an active material is formed by cracking under a protective gas; this morphology is conductive to reducing the grain boundary resistance and the electron transfer resistance, increasing the contact area with the electrolyte and having certain structure rigidity; the electronic conductivity is improved by the common occupation of the Mg and La on the A position and partial Sr substitution on the Mg position and the partial Y and Li substitution on the La position; and the stability of the perovskite structure is improved by the Cu and Zn doping on the B position, and the high-performance magnesium ion battery cathode material is formed at last.

The invention provides a preparation method of a Zn-doped MnFe2O4@C composite material for a supercapacitor and an application thereof. The method comprises the steps: performing hydrothermal reactionof manganese chloride (MnCl2), ferric chloride (FeCl3) and potassium hydroxide to obtain MnFe2O4, fully mixing MnFe2O4 and zinc nitrate (Zn (NO3) 2) and performing high-temperature calcination undershielding gas to obtain Zn-doped MnFe2O4, compounding the obtained Zn-doped MnFe2O4 and PDA, and then performing high-temperature carbonization under shielding gas to finally obtain the Zn-doped MnFe2O4-C composite material. The particle size of the obtained Zn-doped MnFe2O4@C composite material is nanometer, the Zn-doped MnFe2O4@C composite material has a large specific surface area, the conductivity of MnFe2O4 is effectively improved through Zn doping, and the obtained Zn-doped MnFe2O4@C composite material has excellent electrochemical performance.

The invention provides a doping type supercapacitor electrode material. A simple hydrothermal method is adopted, zinc doped nickel-base metal organic frame material is synthesized for the first time and is applied to a supercapacitor for the first time. By controlling the concentration of reactants, the solution mixing mode, the reaction time, the reaction temperature and other technological parameters, the zinc doped supercapacitor electrode material is successfully synthesized, and high capacity, large magnification, long circulation and other superior characters are shown.

The invention discloses a preparation method of a water-soluble Zn-doped CdTe quantum dot CdxZn1-xTe. The preparation method comprises the following steps of: mixing a cadmium salt and a zinc salt or oxides of cadmium and zinc with a water-soluble mercapto-compound in a water phase; injecting prepared tellurium hydride to obtain a CdxZn1-xTe precursor solution; putting the solution into a hydro-thermal reaction kettle; and reacting to obtain a CdxZn1-xTe fluorescent quantum dot. The method is implemented in a water phase, is safe, easy and convenient for operation, is easy for mass productionand is environmentally friendly; the obtained product has high performance; even Zn doping molar percentage (i.e., the molar percentage of Zn to Cd in CdxZn1-xTe) surpasses 70 percent, the obtained quantum dot has high fluorescent quantum yield and high light stability and can be widely applied to photoelectric conversion, luminous and display materials, biological detection and targeting tracing; and the content and the toxicity of Cd are greatly lowered.

The invention provides a full-oxide thin film heterojunction based on a zinc-doped bismuth ferrite / nickel oxide material, and belongs to the technical field of semiconductor devices. The invention discloses a method for accurately preparing a zinc-doped bismuth ferrite / nickel oxide thin film heterojunction. The heterojunction adopts a sol-gel technology, the stoichiometric ratio of elements in each layer can be accurately controlled, meanwhile, good crystallinity and uniform and compact morphology of each layer of thin film are ensured, the controllability is strong, the process is simple, and the preparation efficiency is high. Good matching and coupling of zinc-doped bismuth ferrite and nickel oxide are achieved, the heterojunction structure is formed, a bismuth ferrite polarization electric field and a heterojunction built-in electric field are combined to promote photon-generated carrier transport, a high-speed photoelectric response characteristic within a visible light range is obtained, and the heterojunction can be used for manufacturing related semiconductor photoelectric detectors. The heterojunction is of great significance to the practical application of the oxide perovskite thin film in the field of semiconductor devices.

The invention provides a Zn in-situ doping P type hexagonal boron nitride film and a preparation method thereof, and belongs to the technical field of semiconductor material preparation and semiconductor doping. According to the method, a high-purity hBN target, a high-purity Zn target and a cleaned substrate are put into a magnetron sputtering growth chamber; a radio frequency magnetron double-target co-sputtering technology is used; Zn impurities are doped in situ in the hBN film growth process; after the growth completion, the film is subjected to in-situ annealing in the N2 atmosphere; thefilm is cooled to the chamber temperature under the N2 gas protection, so that the Zn in-situ doping P type hBN film is obtained on the substrate. The method is simple; the cost is low; safety and reliability are realized; the toxicity and harm do not exist; the doping concentration can be controlled through regulating the target distance and the sputtering power of the Zn target; the B atom lattice point position can be easily occupied by Zn in the hBN film and has the lower forming energy and smaller impurity activation energy as the substituting impurities, so that the Zn doping P type hBNfilm with lower resistivity can be obtained; the performance is stable.

The invention provides a magnesium ion battery negative electrode material MaEu0.7Ca0.3Hf0.8Cu0.1Zn0.1WO6 and a preparation method. The magnesium ion battery negative electrode material is characterized in that the negative electrode material is of a double perovskite structure; in the preparation process, the crystallization characteristic of crystals with lattice defects is changed by applying an electric field in the specific direction during a high-temperature solid state reaction, and columnar particles grow in the electric field direction; meanwhile, by means of non-uniform crystallization of the surfaces of the columnar particles, a sintering aid is non-uniformly adhered to the parts with large surface curvature radius, so that the particles are partially bonded to form continuous porous morphology; the morphology is beneficial for reducing the crystal boundary resistance and the electron migration resistance, improving the magnesium iron migration capacity and increasing the rate of a redox reaction and has the certain structure rigidity to form buffer for material volume changes generated in the charging and discharging process; and furthermore, by means of Mg and Eu common occupy at the A position, Ca doping at the Eu position and Cu and Zn doping at the B position, the high-performance magnesium ion battery negative electrode material is prepared.

The invention discloses an electric field-regulated selective crystallization synthesized double perovskite magnesium ion battery negative electrode material and a preparation method thereof. The negative electrode material is characterized in that the composition of the negative electrode material is MgY0.7Li0.3Zr0.8Cu0.1Zn0.1NbO6, and an electric field having a specific direction is applied during a high-temperature solid phase reaction in the preparation process to change the crystal characteristics of lattice defect crystals and grow cylindrical particles along the direction of the electric field; the non-uniform crystallization on the surfaces of the cylindrical particles makes a sintering aid non-uniformly adhered to the position having a large surface curvature radius and partially bonded to form a continuous porous morphology; the morphology is in favor of reducing the crystal boundary resistance and the electron migration resistance and accelerating the migration ability of magnesium ions and the oxidation reduction reaction rate; the material has a certain structure rigidity, so the volume change in the charge and discharge process is buffered; and the high-performance lithium ion battery negative electrode material is formed through the co-occupation of Mg and Y in an A position, the Li doping in a Y position and the Cu and Zn doping in a B position.

The invention belongs to the field of materials, and discloses a method for improving the thermoelectric performance of SnTe through Zn doping. Sn powder, Zn powder and Te powder are respectively weighed according to the element ratio of 1-x:x:1, wherein the value of x is 0.01-0.05 , Grind, mix and evenly press into a sheet, put it into a quartz tube, vacuumize and seal the tube, and sinter in a box furnace and a discharge plasma sintering furnace in turn to obtain a Zn-doped SnTe compound thermoelectric material. The method of the invention has simple process operation and high repeatability, and the prepared SnTe-doped Zn compound has the characteristics of high crystallinity, less impurities, high density and the like, and can greatly improve the performance of the SnTe thermoelectric material.

The invention discloses a Zn element-doped Mg2Si-based thermoelectric material, which relates to thermoelectric materials. The thermoelectric performance of the Zn-doped Mg2Si-based thermoelectric material is better than the existing Mg2Si material. The mechanism is that the Zn element has properties similar to those of alkaline earth metals. When the Zn element is added, it can easily replace the Mg site and be doped as a donor, providing conductive electrons as carriers, thus improving the conductivity and thermoelectric properties of the material, filling the gap in Zn doping of Mg2Si-based thermoelectric materials.

The invention provides a Zn in-situ doping P type hexagonal boron nitride film and a preparation method thereof, and belongs to the technical field of semiconductor material preparation and semiconductor doping. According to the method, a high-purity hBN target, a high-purity Zn target and a cleaned substrate are put into a magnetron sputtering growth chamber; a radio frequency magnetron double-target co-sputtering technology is used; Zn impurities are doped in situ in the hBN film growth process; after the growth completion, the film is subjected to in-situ annealing in the N2 atmosphere; thefilm is cooled to the chamber temperature under the N2 gas protection, so that the Zn in-situ doping P type hBN film is obtained on the substrate. The method is simple; the cost is low; safety and reliability are realized; the toxicity and harm do not exist; the doping concentration can be controlled through regulating the target distance and the sputtering power of the Zn target; the B atom lattice point position can be easily occupied by Zn in the hBN film and has the lower forming energy and smaller impurity activation energy as the substituting impurities, so that the Zn doping P type hBNfilm with lower resistivity can be obtained; the performance is stable.

The invention relates to a method for preparing a kilogram grade thermistor material. In the method, automatic hydrothermal kettles having volumed of 2L, 5L or 10L, different in volume, are adopted asreaction vessels, and wet chemical synthesis is performed under different packing conditions including 60%, 70% or 80%. A material system adopts Co-Mn-O as matrix, electrical properties and stabilityare regulated through Fe and Zn doping, and influences of optimum reaction conditions including reaction temperature, reaction time, the stirring speed, the degree of packing and a sintering processon material performance are explored. The kilogram grade thermistor material prepared by the method has uniform grain size and high density, and electrical performance parameters are that: B<25 / 50> is3865-4403 K, Rho<25> is 9.8-26 k[Ohm].cm, and the resistance drift rate is 2.0%-0.2%. The method lays a good foundation for synthesis of heat-sensitive materials in the hydrothermal field and for theengineering application of thermistor elements.

The invention discloses a method for increasing the zinc doping concentration in indium phosphide, and belongs to the technical field of semiconductor materials. The method for increasing the zinc doping concentration in indium phosphide comprises the steps of: growing a ZnSe layer on the surface of indium phosphide subjected to zinc diffusion, then conducting annealing treatment, and removing the ZnSe layer. According to the ZnSe layer, in the annealing treatment process, Zni<m+> is prevented from escaping from an indium phosphide matrix, so that the probability that the Zni<m+> is activated and then converted into substitution site ZnS<-> is increased, and finally the zinc doping concentration in indium phosphide is increased.

Disclosed are a continuous electron ion quick conductive double-perovskite negative electrode material of a potassium ion battery and a preparation method for the negative electrode material. The negative electrode material is characterized by comprising KTb<0.5>Ba<0.2>Y<0.2>Li<0.1>Zr<0.8>Fe<0.1>Zn<0.1>NbO<6>; in the preparation process, a continuous pore channel structure of gel is taken as a template to form a continuous porous appearance double-perovskite structured product with bonded particle parts; meanwhile, a continuous high-conductivity carbon film attached to the surface of the active material is formed through cracking under a protective gas; by virtue of such appearance, crystal boundary resistance can be lowered; a continuous electron transfer network is formed and electron transfer resistance is lowered; a contact area with an electrolyte is enlarged, and certain structural rigidity is achieved; furthermore, through co-occupation of K and Tb in A position and through partial Ba, Y and Li replacement in a Tb position, electron conductivity is improved; and by virtue of Fe and Zn doping in a B position, the perovskite structural stability is improved, and the high-performance negative electrode material of the potassium ion battery can be finally formed.