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Two-dimensional Zn doping Ca2So nano membrane and chemical gaseous phase precipitation method thereof

A chemical vapor deposition and nano-film technology, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor crystallinity, low yield, and small grain size of two-dimensional nano-films, and achieve Good industrialization prospect, simple preparation process and high product purity

Active Publication Date: 2019-10-18
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, regarding Zn-doped Ca 2 Si thermoelectric materials are still almost unreported
[0005] In addition, the size and thickness of the two-dimensional nanofilms prepared by the exfoliation method cannot be effectively controlled, and the yield is low.
However, the two-dimensional nano-film obtained by sputtering method has poor crystallinity, small grain size, and easy to have metal residues.

Method used

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  • Two-dimensional Zn doping Ca2So nano membrane and chemical gaseous phase precipitation method thereof
  • Two-dimensional Zn doping Ca2So nano membrane and chemical gaseous phase precipitation method thereof
  • Two-dimensional Zn doping Ca2So nano membrane and chemical gaseous phase precipitation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Preparation of two-dimensional Zn-doped Ca by chemical vapor deposition 2 The method for Si nano film, concrete steps are as follows:

[0024] (1) Put the glass substrate into acetone, absolute ethanol, and deionized water for 15 minutes and ultrasonically clean it for 15 minutes to remove impurities on the surface of the substrate;

[0025] (2) get the Ca powder and the Zn powder that the molar ratio is 40:0.5, will be housed 3.5 gram purity be the quartz vessel of the Ca powder of 99.9% be placed on the front end area of ​​three temperature zones high-temperature tube furnace, will be equipped with 0.1 gram The quartz dish of Zn powder with a purity of 99.9% is placed in the middle area of ​​the three-temperature zone high-temperature tube furnace, and the pretreated glass substrate is placed in the end zone of the three-temperature zone high-temperature tube furnace;

[0026] (3) Evacuate the vacuum degree of the high-temperature tube furnace to below 10 Pa, then cl...

Embodiment 2

[0029] Preparation of two-dimensional Zn-doped Ca by chemical vapor deposition 2 The method for Si nano film, concrete steps are as follows:

[0030] (1) Put the glass substrate into acetone, absolute ethanol, and deionized water for 15 minutes and ultrasonically clean it for 15 minutes to remove impurities on the surface of the substrate;

[0031] (2) get Ca powder and Zn powder that mol ratio is 40:3, will be equipped with 3.5 grams of purity and be the quartz dish of the Ca powder of 99.9% to be placed on the front end area of ​​three temperature zones high-temperature tube furnace, will be equipped with 0.5 grams The quartz dish of Zn powder with a purity of 99.9% is placed in the middle area of ​​the three-temperature zone high-temperature tube furnace, and the pretreated glass substrate is placed in the end zone of the three-temperature zone high-temperature tube furnace;

[0032] (3) Evacuate the vacuum of the high-temperature tube furnace to below 10 Pa, then close th...

Embodiment 3

[0035] Preparation of two-dimensional Zn-doped Ca by chemical vapor deposition 2 The method for Si nano film, concrete steps are as follows:

[0036] (1) Put the glass substrate into acetone, absolute ethanol, and deionized water for 15 minutes and ultrasonically clean it for 15 minutes to remove impurities on the surface of the substrate;

[0037] (2) get Ca powder and Zn powder that mol ratio is 40:2.5, the quartz dish that 2.3 grams of purity is the Ca powder of 99.9% is placed on the front end area of ​​three temperature zone high-temperature tube furnaces, will be equipped with 0.3 grams of purity is The 99.9% Zn powder quartz vessel is placed in the middle area of ​​the three-temperature zone high-temperature tube furnace, and the pretreated glass substrate is placed in the end area of ​​the three-temperature zone high-temperature tube furnace;

[0038] (3) Evacuate the vacuum degree of the high-temperature tube furnace to below 10 Pa, then close the vacuum valve, and p...

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Abstract

The invention belongs to the field of low-dimension nano membrane materials, and particularly relates to a two-dimensional Zn doping Ca2So nano membrane and a chemical gaseous phase precipitation method thereof. A silica dish containing Ca powder is placed in the front area of a tri-temperature-zone high-temperature tubular furnace, a silica dish containing Zn powder is placed in the middle of thethree-temperature-zone high-temperature tubular furnace, and a pre-processed glass substrate is placed at the rear area of the three-temperature-zone high-temperature tubular furnace. The front, middle and rear areas of the three-temperature-zone high-temperature tubular furnace is heated under a certain temperature increasing rate with the presence of argon and SiH4, materials generated by reaction precipitate on the glass substrate after a certain period of reaction, and the two-dimensional Zn Ca2Si doping membrane material is obtained after performing in-situ annealing on the materials generated in the reaction in the tubular furnace. The method has the advantages that the preparation technology is simple, the purity of productions is higher, it is expected to achieve the production oflarge-scale high-quality two-dimensional Zn Ca2Si doping nano membrane, and there exists excellent industrializing prospect.

Description

technical field [0001] The invention belongs to the field of low-dimensional nano film materials, in particular to a two-dimensional Zn-doped Ca 2 The preparation method of Si nano film and chemical vapor deposition method. Background technique [0002] Two-dimensional materials exhibit many peculiar properties because both carrier migration and heat diffusion are confined in a two-dimensional plane. Its adjustable band gap is widely used in fields such as field effect transistors, optoelectronic devices, and thermoelectric devices; the controllability of its spin degrees of freedom and valley degrees of freedom has attracted in-depth research in the fields of spintronics and valleytronics; different Two-dimensional materials have different electrical properties or anisotropy of optical properties due to the special properties of the crystal structure, including Raman spectroscopy, photoluminescence spectroscopy, second-order harmonic spectroscopy, optical absorption spectr...

Claims

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Application Information

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IPC IPC(8): C23C16/42C23C16/455C23C16/56
CPCC23C16/42C23C16/455C23C16/56
Inventor 温翠莲彭建邦余新江萨百晟蔡书畅
Owner FUZHOU UNIV
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