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Zn element doping mg 2 Si-based thermoelectric materials

An element doping, thermoelectric material technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problems of low thermoelectric performance, high price, etc. Effect

Inactive Publication Date: 2016-08-17
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Thermoelectric figure of merit Z = α for the performance of thermoelectric materials 2 σ / κ, where α, σ, and κ are the Seebeck coefficient, electrical conductivity, and thermal conductivity of the material, respectively. Most high-quality thermoelectric materials contain toxic elements and are expensive, while Mg 2 Si-based thermoelectric materials have a series of characteristics such as abundant element reserves, low cost, and environmental friendliness, but Mg 2 The thermoelectric performance of Si-based thermoelectric materials is low and needs to be further improved

Method used

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  • Zn element doping mg  <sub>2</sub> Si-based thermoelectric materials

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Effect test

Embodiment 1

[0018] The raw material powder (magnesium, zinc, silicon, antimony) is calculated according to the stoichiometric ratio of Mg 1.925 Zn 0.075 Si 0.99 Sb 0.01 (the Mg element is over 5%, because Mg is easy to volatilize at high temperature, and the Mg content in the final sample is less than that of the chemical formula) After grinding evenly, place it in an alumina open crucible, and cover the raw material with an oxide Boron powder, boron oxide will melt to form a layer of liquid film when the melting temperature is 700℃, covering the raw material sample, preventing the contact between the raw material sample and the outside world, and playing a sealing role, especially preventing the oxidation of Mg and volatile. The raw material sample was smelted in a heat treatment furnace (700°C, 10h), the sample was taken out and ground into powder, and sintered at 80MPa, 1073K vacuum discharge plasma for 15min to obtain 3.75% Zn-doped Mg 1.925 Zn 0.075 Si 0.99 Sb 0.01 block sampl...

Embodiment 2

[0020] The raw material powder (magnesium, zinc, silicon, antimony) is calculated according to the stoichiometric ratio of Mg 1.9 Zn 0.1 Si 0.99 Sb 0.01 (5% of the Mg element is excessive, because Mg will easily volatilize at high temperature, and the Mg content in the final sample will be less than that of the chemical formula) After grinding evenly, place it in an alumina open crucible, and cover the raw material with a Boron oxide powder, when the melting temperature of boron oxide is 700°C, it will melt to form a layer of liquid film, which covers the raw material sample, prevents the contact between the raw material sample and the outside world, and acts as a seal, especially preventing the Mg oxidation and volatilization. The raw material sample was smelted in a heat treatment furnace (700°C, 10h), the sample was taken out and ground into powder, and sintered at 80MPa, 1073K vacuum discharge plasma for 15min to obtain 5% Zn-doped Mg 1.9 Zn 0.1 Si 0.99 Sb 0.01 bloc...

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Abstract

The invention discloses a Zn element-doped Mg2Si-based thermoelectric material, which relates to thermoelectric materials. The thermoelectric performance of the Zn-doped Mg2Si-based thermoelectric material is better than the existing Mg2Si material. The mechanism is that the Zn element has properties similar to those of alkaline earth metals. When the Zn element is added, it can easily replace the Mg site and be doped as a donor, providing conductive electrons as carriers, thus improving the conductivity and thermoelectric properties of the material, filling the gap in Zn doping of Mg2Si-based thermoelectric materials.

Description

technical field [0001] The invention relates to thermoelectric materials, in particular to a kind of Zn element doped Mg 2 Si-based thermoelectric materials. technical background [0002] Thermoelectric material is a kind of functional material that realizes mutual conversion of thermal energy and electrical energy. When a temperature difference exists across a thermoelectric material, it converts thermal energy into electrical energy. Compared with traditional power generation methods, power generation devices made of thermoelectric materials have a series of outstanding advantages such as no mechanical moving parts, no noise, no wear, simple structure, and designable shape. And it can be used for recycling industrial waste heat and automobile tail heat. When an electric current is passed through a thermoelectric material, it converts electrical energy into heat, absorbing heat at one end and releasing it at the other end. This property can be used for refrigeration. R...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/14H01L35/34H10N10/851H10N10/01
Inventor 杜正良崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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