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Zn in-situ doping P type hexagonal boron nitride film and preparation method thereof

A technology of hexagonal boron nitride and in-situ doping, which is applied in metal material coating technology, vacuum evaporation plating, coating, etc., can solve the problem of highly toxic compounds, and achieves simple methods, low resistivity, and low cost. cheap effect

Inactive Publication Date: 2018-07-27
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although impurities such as Be and Mg have lower ionization energies in hBN, Be and its compounds are highly toxic, and Mg is a very active chemical element, which is prone to violent combination reactions during in-situ doping

Method used

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  • Zn in-situ doping P type hexagonal boron nitride film and preparation method thereof
  • Zn in-situ doping P type hexagonal boron nitride film and preparation method thereof
  • Zn in-situ doping P type hexagonal boron nitride film and preparation method thereof

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Embodiment 1

[0016] Place the double-sided polished silicon wafer into NH at a volume ratio of 1:1:5 3 ·H 2 O: H 2 o 2 :H 2 O solution, heated in a water bath for 10 minutes; then, the above-mentioned silicon wafer was placed in HCl:H with a volume ratio of 1:1:6. 2 o 2 :H 2 O solution, heated in a water bath for 10 minutes. The main purpose of these two steps is to remove metal ions and organic matter contaminated on the surface of the silicon wafer. Then, the silicon wafer was cleaned for 45 seconds with an HF solution having a volume concentration of 2%, so as to remove the natural oxide layer on the surface of the silicon wafer. Finally, after rinsing the wafer with deionized water, dry it with nitrogen gas for later use.

[0017] The hBN target 5 with a purity of 99.95%, the high-purity Zn target 6 with a purity of 99.9995% and the cleaned silicon wafer substrate 4 are placed on figure 1 In the growth chamber 1 shown, the vacuum of the system was pumped to 5×10 -4 Pa, adjust...

Embodiment 2

[0022] The quartz plate was ultrasonically cleaned with acetone for 10 minutes; then, ultrasonically cleaned with absolute ethanol for 10 minutes; finally, ultrasonically cleaned with deionized water for 10 minutes.

[0023] Place the hBN target 5 with a purity of 99.95%, the high-purity Zn target 6 with a purity of 99.9995% and the cleaned quartz substrate 4 on figure 1 In the growth chamber 1 shown, the vacuum of the system was pumped to 5×10 -4 Pa, adjust the target distance of the hBN target 5 to 5 cm, adjust the target distance of the Zn target 6 to 6 cm, turn on the switch of the heating table 3, heat the quartz substrate 4 to 450 ° C, and then open the inlet valve 2 to allow the flow N ratio 1:1 2 Mixed gas with Ar gas, a total of 100 sccm, after the gas flow is stable, adjust the air pressure in the growth chamber to 1.0Pa, and cover the substrate with a baffle; first turn on the RF power connected to the hBN target 5, adjust the voltage to 1600V, and rotate the coupl...

Embodiment 3

[0025] The double-sided polished sapphire slices were ultrasonically cleaned with acetone for 10 minutes; then, ultrasonically cleaned with absolute ethanol for 10 minutes; finally, ultrasonically cleaned with deionized water for 10 minutes.

[0026] The hBN target 5 with a purity of 99.95%, the high-purity Zn target 6 with a purity of 99.9995% and the cleaned sapphire substrate 4 are placed on figure 1 In the growth chamber 1 shown, the vacuum of the system was pumped to 5×10 -4 Pa, adjust the distance between the hBN target 5 and the Zn target 6 to 5 cm, turn on the switch of the heating table 3, heat the sapphire substrate 4 to 500 °C, and then open the air inlet valve 2 to pass in the gas with a flow ratio of 1:1. N 2 Mixed gas with Ar gas, a total of 100 sccm, after the gas flow is stable, adjust the air pressure in the growth chamber to 1.0Pa, and cover the substrate with a baffle; first turn on the RF power connected to the hBN target 5, adjust the voltage to 1700V, an...

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Abstract

The invention provides a Zn in-situ doping P type hexagonal boron nitride film and a preparation method thereof, and belongs to the technical field of semiconductor material preparation and semiconductor doping. According to the method, a high-purity hBN target, a high-purity Zn target and a cleaned substrate are put into a magnetron sputtering growth chamber; a radio frequency magnetron double-target co-sputtering technology is used; Zn impurities are doped in situ in the hBN film growth process; after the growth completion, the film is subjected to in-situ annealing in the N2 atmosphere; thefilm is cooled to the chamber temperature under the N2 gas protection, so that the Zn in-situ doping P type hBN film is obtained on the substrate. The method is simple; the cost is low; safety and reliability are realized; the toxicity and harm do not exist; the doping concentration can be controlled through regulating the target distance and the sputtering power of the Zn target; the B atom lattice point position can be easily occupied by Zn in the hBN film and has the lower forming energy and smaller impurity activation energy as the substituting impurities, so that the Zn doping P type hBNfilm with lower resistivity can be obtained; the performance is stable.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation and semiconductor doping, and in particular relates to a Zn in-situ doped P-type hexagonal boron nitride thin film and a preparation method thereof. Background technique [0002] Hexagonal boron nitride (hBN) is a synthetic wide-bandgap semiconductor material, which belongs to the graphite-like structure and is the most stable structure among various isomers of BN. The forbidden band width of hBN is about 6.0eV, the intrinsic absorption limit is about 210nm, and the absorption coefficient near the absorption edge is as high as 10 5 cm -1 , has very high thermal conductivity and dielectric strength, and has excellent thermal and chemical stability, so it has a good application prospect in the fields of deep ultraviolet photoelectric devices and high-temperature, high-power electronic devices. [0003] In order to realize the application of hBN in devices, the preparatio...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06
Inventor 陈占国王鑫侯丽新刘秀环全海燕王帅高延军贾刚
Owner JILIN UNIV
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