A CVD-based strained diamond growth doping method
A diamond and diamond layer technology, applied in metal material coating process, coating, gaseous chemical plating and other directions, can solve the problems of difficult doping, high formation energy, limiting the electrical properties of n-type diamond, and reduce the resistivity. Effect
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[0021] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:
[0022] Such as figure 1 As shown, the present invention provides a strained diamond growth doped epitaxial structure based on the CVD method, through the CVD method, from bottom to top in the vertical direction, sequentially deposit X on the substrate layer a C 1-a Gradient Buffer, X b C 1-b relaxation layer, eventually at X b C 1-b A layer of CVD strained diamond is deposited on top of the relaxed layer.
[0023] Such as figure 1 As shown, the vertical thickness of the substrate layer material is between Z=Z0 and Z=Z1.
[0024] Such as figure 1 Shown, X a C 1-a The vertical thickness of the gradient buffer layer is between Z=Z1 and Z=Z2.
[0025] Such as figure 1 Shown, X b C 1-b The vertical thickness of the relaxed layer is between Z=Z2 and Z=Z3.
[0026] Such as figure 1 As shown, the vertical thickness of the CVD strain...
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