Preparation method of P-type nitride epitaxial structure, epitaxial structure and semiconductor device

An epitaxial structure, nitride technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the generation of Mg cones and fog flakes, poor surface quality and crystal quality of p-type GaN epitaxy, to improve Effects of crystal quality, increased carrier concentration, and reduced surface formation energy

Pending Publication Date:
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Growing high-quality P-type GaN has always been a difficult problem in the field of semiconductor technology, especially when the carrier concentration is greater than 1E18cm -3 When the traditional method increases the carrier concentration of p-type GaN by increasing the Mg concentration, the corresponding p-type GaN epitaxial surface quality and crystal quality become very poor, resulting in Mg cones and haze

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of P-type nitride epitaxial structure, epitaxial structure and semiconductor device
  • Preparation method of P-type nitride epitaxial structure, epitaxial structure and semiconductor device
  • Preparation method of P-type nitride epitaxial structure, epitaxial structure and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0034] Specifically, refer to figure 1 , the present invention provides a preparation method of a P-type nitride epitaxial structure, comprising the following steps:

[0035] Provide substrate 1;

[0036] On the substrate 1, grow a U-type nitride layer, a lightly-doped P-type nitride layer 4 and a highly-doped P-type nitride layer 5 grown by using a delta doping method in sequence;

[0037] in the cavity N 2 Annealing in atmosphere;

[0038] The highly doped P-type nitride layer 5 grows periodically, and each period of growth includes the following steps:

[0039] Feed N source and Group III metal source, and add surfactant to form a non-doped nitride layer, and the surfactant is In;

[0040] Cut off the three-group metal source and surfactant, and carry out N source purging to desorb the three-group metal atoms;

[0041] The doping source is passed through, the doping elements of the doping source include Mg and Cu, the Mg element is the main doping element, and the Cu e...

Embodiment 1

[0054] This embodiment prepares and tests the P-type GaN structure, which specifically includes the following steps:

[0055] (1) Take sapphire as the substrate;

[0056] (2) After growing the undoped GaN buffer layer of about 50 nm, grow the undoped GaN layer of about 2 μm as the bottom layer;

[0057] (3) Grow a low-doped p-type GaN layer of about 2 μm, the growth pressure is 150 Torr, and the growth temperature is 1090 °C;

[0058] (4) Use the delta doping method to grow a high-doped p-type GaN layer of about 550 nm, the growth pressure is 500 Torr, the growth temperature is 1045, and the growth is one cycle according to the following steps, and a total of 300 cycles of cyclic growth:

[0059] (41) Keep NH 3 Pass in, and pass in the TMGa and TMIn sources for 15 seconds, the flow rate of TMGa is 40sccm, and TMIn:TMGa=10%;

[0060] (42) then turn off the TMGa source and the TMIn source, and only pass NH purging for 4 seconds, so that the three-group metal atoms are desorbe...

Embodiment 2

[0079] In order to further illustrate the effect of high voltage on the heavily doped P-type GaN layer, this embodiment changes the growth pressure of the heavily doped P-type GaN layer compared with Embodiment 1, and the rest is the same as that of Embodiment 1;

[0080] 1) the growth pressure of step 4) in Example 1 is 400 Torr;

[0081] 2) the growth pressure of step 4) in Example 1 is 600 Torr;

[0082] The P-type GaN structure samples prepared under the two growth pressures in the above-mentioned Example 1 and Example 2 were subjected to the Hall effect test and the XRD test respectively under the test conditions of the Hall current of 0.0049mA, and the obtained P-type GaN structure samples The layer results are shown in Table 2:

[0083] Table 2:

[0084]

[0085] The results show that: as the growth pressure increases, the carrier concentration increases (500 Torr in Example 1 is higher than that in Example 2 (1)), that is, the doping rate of Mg increases, and high...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a P-type nitride epitaxial structure, the epitaxial structure and a semiconductor device. The method comprises the following steps: providing a substrate; sequentially growing a U-type nitride layer, a lightly doped P-type nitride layer and a highly doped P-type nitride layer which is grown by adopting a delta doping method on the substrate; annealing is carried out in the cavity; wherein the highly-doped P-type nitride layer grows periodically, and the growth of each period comprises the following steps of: introducing an N source and a III-group metal source, and adding a surface active agent to form a non-doped nitride layer; cutting off the III-group metal source and the surfactant, and carrying out N-source purging; a doping source is introduced, doping elements of the doping source comprise Mg and Cu, the Mg element is a main doping element, and the Cu element is an auxiliary doping element. According to the method, the carrier concentration of the P-type nitride is improved, and meanwhile good crystal quality and epitaxial surface quality are achieved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a preparation method of a P-type nitride epitaxial structure, an epitaxial structure and a semiconductor device. Background technique [0002] Growing high-quality P-type GaN has always been a difficult problem in the field of semiconductor technology, especially the growth carrier concentration is greater than 1E18cm -3 When the traditional method increases the carrier concentration of p-type GaN by increasing the Mg concentration, the corresponding p-type GaN epitaxial surface quality and crystal quality become very poor, resulting in Mg cones and fog flakes. SUMMARY OF THE INVENTION [0003] The purpose of the present invention is to provide a preparation method of a P-type nitride epitaxial structure, an epitaxial structure and a semiconductor device, which can improve the carrier concentration and have better crystal quality and epitaxial surface quality. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L29/20H01L29/207
CPCH01L21/02458H01L21/02499H01L21/0254H01L21/02579H01L21/0262H01L21/02694H01L29/2003H01L29/207Y02P70/50
Inventor 周溯沅闫其昂王国斌
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap