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A method to enhance the thermoelectric performance of snte by zn doping

A technology of thermoelectric performance and discharge plasma, which is applied in the manufacture/processing of thermoelectric devices, and lead wire materials of thermoelectric device junctions. High, less impurity, high crystallinity effect

Active Publication Date: 2019-09-13
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because the existence of Pb does not meet the requirements of environmental protection, the call for promoting SnTe, which has a similar structure to PbTe and is environmentally friendly, as its substitute is increasing.
However, the low thermoelectric performance of the SnTe matrix seriously hinders its commercial application, and domestic reports on SnTe-based thermoelectric materials are still in the initial research stage.

Method used

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  • A method to enhance the thermoelectric performance of snte by zn doping
  • A method to enhance the thermoelectric performance of snte by zn doping
  • A method to enhance the thermoelectric performance of snte by zn doping

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Embodiment Construction

[0031] The specific implementation of the present invention will be described in conjunction with the examples.

[0032] (1) Weigh Sn powder, Zn powder and Te powder according to the molar ratio of 1-x:x:1 respectively, wherein the values ​​of x are respectively taken as 0.01 and 0.02; then grind in an agate mortar for 30min to make the above three powders well mixed.

[0033] Or set up a comparison example, x takes 0.

[0034] (2) Transfer the uniformly mixed powder into a steel mold with a diameter of Φ=10mm, and continue for 5min with a pressure of 5MPa;

[0035] (3) Move the pressed cylindrical flake sample into a cleaned Φ=20mm quartz tube; use a hydrogen-oxygen generator to seal the tube; first use a mechanical pump to pre-vacuum, and then use a molecular pump to evacuate to 10 -3 Pa, sealed tube;

[0036] (4) placing the quartz tube with the sample in a box furnace for sintering;

[0037] (5) The temperature rise for the first sintering: after 330 minutes, the tempe...

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Abstract

The invention belongs to the field of materials, and discloses a method for improving the thermoelectric performance of SnTe through Zn doping. Sn powder, Zn powder and Te powder are respectively weighed according to the element ratio of 1-x:x:1, wherein the value of x is 0.01-0.05 , Grind, mix and evenly press into a sheet, put it into a quartz tube, vacuumize and seal the tube, and sinter in a box furnace and a discharge plasma sintering furnace in turn to obtain a Zn-doped SnTe compound thermoelectric material. The method of the invention has simple process operation and high repeatability, and the prepared SnTe-doped Zn compound has the characteristics of high crystallinity, less impurities, high density and the like, and can greatly improve the performance of the SnTe thermoelectric material.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and relates to a method for improving the thermoelectric performance of SnTe through Zn doping. Background technique [0002] Since the Industrial Revolution, energy issues have become an insurmountable gap in the economic development of countries around the world. With the rapid expansion of the world's economic and social scale, energy consumption is increasing day by day, and people are more aware of the importance of energy in today's world. Pay more attention to the sustainable development of energy. [0003] Thermoelectric materials can directly convert thermal energy to electrical energy. They have the advantages of small size, no pollutant emission, high reliability, environmental friendliness, and wide applicable temperature range. They have been successfully applied to thermoelectric devices powered by radioactive isotopes. As the only power supply system in space probes. In a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H01L35/16H10N10/01H10N10/852
CPCH10N10/852H10N10/01
Inventor 昂然陈志禹王正上尹聪胡庆唐军
Owner SICHUAN UNIV
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