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Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof

An electrical detector and ultraviolet light technology, applied in the field of photodetectors, can solve the problem of reducing the response time of photodetectors, and achieve the effects of easy operation, stable and uniform thickness, and strong process controllability

Active Publication Date: 2017-02-15
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, β-Ga 2 o 3 There are often a large number of oxygen vacancies inside the film, and these oxygen vacancies can trap photogenerated carriers and reduce the response time of photodetectors.

Method used

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  • Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof
  • Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof
  • Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof

Examples

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example 1

[0023] Example 1: Pure Ga 2 o 3 Fabrication of thin-film solar-blind photodetectors

[0024] First take a c-plane sapphire substrate with a size of 10mm×10mm×0.5mm, soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2Blow dry and set aside. Put the above-mentioned cleaned sapphire substrate into the deposition chamber, and grow a layer of 200nm β-Ga on it by magnetron sputtering 2 o 3 thin film, with 99.99% pure Ga 2 o 3 The ceramic is used as the target material, and the specific growth parameters of the film are as follows: the background vacuum is 1×10 - 4 Pa, the working atmosphere is Ar gas, the working pressure is 0.8Pa, the substrate temperature is 650°C, the sputtering power is 80W, and the sputtering time is 2h. The β-Ga prepared above 2 o 3 The thin film is covered with a hollow interdigitated electrode mask, and the metal Ti layer (30nm) and Au l...

example 2

[0025] Example 2: Zn:Ga doped with different concentrations of Zn 2 o 3 Fabrication of thin-film solar-blind photodetectors

[0026] First take a c-plane sapphire substrate with a size of 10mm×10mm×0.5mm, soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside. Put the above-mentioned cleaned sapphire substrate into the deposition chamber, and grow a layer of Zn:Ga 2 o 3 thin film, with 99.99% pure Ga 2 o 3 Ceramic as the mother target, in Ga 2 o 3 Different numbers of Zn particles are placed around the glow circle of the target to grow different concentrations of Zn:Ga 2 o 3 Thin films (by XPS for Zn:Ga 2 o 3 Thin film test, Zn:Ga prepared when placing 1, 2, 3, 4, 5, 6 Zn particles 2 o 3 The doping concentration of Zn in the film is respectively 0.69%, 0.88%, 0.96%, 1.83%, 2.49%, 3.03%), and the specific growth parameters of the film...

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Abstract

The invention discloses a Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof. The method specifically comprises the following steps: using a c-surface sapphire single crystal as the substrate, using Zn-doped beta-Ga2O3 film (Zn: Ga2O3) preferentially grown along crystal plane as shown in the description through magnetron sputtering growth as a light absorbing layer, and sputtering an Au / Ti interdigital electrode on the light absorbing layer as a collecting electrode of a photon-generated carrier, and preparing to acquire the Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector. The speed of photoresponse of the Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector through the Zn doping, the Zn particles with specific number are placed around the light-up circle of the Ga2O3 target to grow the Zn: Ga2O3 film with specific concentration, and the method is simple. A commercial preparation method is used for growing the film through the magnetron sputtering, the process is strong in controllability, and easy to operate; the obtained film is compact in surface, stable and uniform in thickness, capable of being prepared in large scale, and good in repeatability. The Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector prepared through the invention has potential application prospect in the solar-blind ultraviolet detection field.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, in particular to a Zn:Ga 2 o 3 Film-based MSM structure sun-blind ultraviolet photodetector and its preparation method. [0002] technical background [0003] Due to the absorption of the ozone layer, the deep ultraviolet light in the solar-blind (200-280nm) band hardly exists in the atmosphere, and the solar-blind photodetectors working in this band have the characteristics of low false alarm rate. Because it is not affected by the sunlight background, the detection sensitivity of solar-blind ultraviolet light signals is extremely high, and the communication accuracy of working in this band is also extremely high. It has a wide range of applications in military and aerospace, and the infrared countermeasure technology is becoming more and more mature. The accuracy of infrared-guided missiles has been seriously threatened, and ultraviolet communication, especially solar-blind ultraviolet ...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0264
CPCH01L31/0264H01L31/09
Inventor 郭道友秦新元王顺利时浩泽李培刚唐为华沈静琴
Owner ZHEJIANG SCI-TECH UNIV
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